Search Results - "Vorobjev, L. E."

Circular photogalvanic effect induced by monopolar spin orientation in p -GaAs/AlGaAs multiple-quantum wells by Ganichev, S. D., Ketterl, H., Prettl, W., Ivchenko, E. L., Vorobjev, L. E.

“…The circular photogalvanic effect (CPGE) has been observed in (100)-oriented p-GaAs/AlGaAs quantum wells at normal incidence of far-infrared radiation. It is…”
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Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm by Babichev, A. V., Bousseksou, A., Pikhtin, N. A., Tarasov, I. S., Nikitina, E. V., Sofronov, A. N., Firsov, D. A., Vorobjev, L. E., Novikov, I. I., Karachinsky, L. Ya, Egorov, A. Yu

“…The room-temperature generation of multiperiod quantum-cascade lasers (QCL) at a wavelength of 5.8 μm in the pulsed mode is demonstrated. The heterostructure…”
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Study of the Spectra of Arched-Cavity Quantum-Cascade Lasers by Babichev, A. V., Pashnev, D. A., Denisov, D. V., Gladyshev, A. G., Bobretsova, Yu. K., Slipchenko, S. O., Karachinsky, L. Ya, Novikov, I. I., Firsov, D. A., Vorobjev, L. E., Pikhtin, N. A., Egorov, A. Yu

“…The temperature characteristics of arched-cavity quantum-cascade lasers with different geometrical dimensions emitting in the spectral range of 7–8 μm are…”
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Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields by Balagula, R. M., Vinnichenko, M. Ya, Makhov, I. S., Firsov, D. A., Vorobjev, L. E.

“…The effect of a lateral electric field on the mid-infrared absorption and interband photoluminescence spectra in double tunnel-coupled GaAs/AlGaAs quantum…”
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Spectral Shift of Quantum-Cascade Laser Emission under the Action of Control Voltage by Babichev, A. V., Pashnev, D. A., Gladyshev, A. G., Kurochkin, A. S., Kolodeznyi, E. S., Karachinsky, L. Ya, Novikov, I. I., Denisov, D. V., Boulley, L., Firsov, D. A., Vorobjev, L. E., Pikhtin, N. A., Bousseksou, A., Egorov, A. Yu

“…Spectral redistribution of the intensity of short- and long-wavelength emission components within gain bandwidth of a 7- to 8-μm quantum-cascade laser under…”
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On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers by Mamutin, V. V., Vasilyev, A. P., Lyutetskiy, A. V., Ilyinskaya, N. D., Zadiranov, Yu. M., Sofronov, A. N., Firsov, D. A., Vorobjev, L. E., Maleev, N. A., Ustinov, V. M.

“…The fabrication and study of the characteristics of a lattice-matched quantum cascade laser structure on an indium-phosphide substrate, designed for a…”
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Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots by Sofronov, A. N., Balagula, R. M., Firsov, D. A., Vorobjev, L. E., Tonkikh, A. A., Sarkisyan, H. A., Hayrapetyan, D. B., Petrosyan, L. S., Kazaryan, E. M.

“…The experimental and theoretical results of studies of optical absorption in doped Ge/Si quantumdot structures in the far-infrared region, corresponding to the…”
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Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field by Balagula, R. M., Vinnichenko, M. Ya, Makhov, I. S., Sofronov, A. N., Firsov, D. A., Vorobjev, L. E.

“…The modulation of polarized radiation by GaAs/AlGaAs structures with tunnel-coupled double quantum wells in a strong lateral electric field is studied. The…”
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Quantum-cascade lasers of mid-IR spectral range: epitaxy, diagnostics and device characteristics by Babichev, A.V., Gladyshev, A.G., Kolodeznyi, E.S., Kurochkin, A.S., Sokolovskii, G.S., Bougrov, V.E., Karachinsky, L. Ya, Novikov, I. I., Dudelev, V.V., Nevedomsky, V.N., Slipchenko, S.O., Lutetskiy, A.V., Sofronov, A.N., Firsov, D.A., Vorobjev, L.E., Pikhtin, N.A., Bousseksou, A., Egorov, A. Yu

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Influence of Auger recombination on the lifetime of nonequilibrium carriers in InGaAsSb/AlGaAsSb quantum well structures by Vorobjev, L. E., Firsov, D. A., Vinnichenko, M. Ya, Zerova, V. L., Melentyev, G. A., Mashko, M. O., Shterengas, L., Kipshidze, G., Belenky, G., Hosoda, T.

“…Carrier recombination processes, including the Auger recombination, are studied in InGaAsSb/AlGaAsSb quantum well nanostructures. Based on the dynamics of…”
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Emission of terahertz radiation from selectively doped AlGaN/GaN heterostructures under the heating of two-dimensional electrons by an electric field by Shalygin, V. A., Vorobjev, L. E., Firsov, D. A., Sofronov, A. N., Melentyev, G. A., Vinnichenko, M. Ya, Lundin, V. V., Nikolaev, A. E., Sakharov, A. V., Tsatsul’nikov, A. F.

“…The emission of terahertz radiation from a AlGaN/GaN heterostructure under the heating of two-dimensional electrons in a lateral electric field is studied. The…”
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Emission of terahertz radiation from GaAsN/GaAs heterostructures in an electric field by Vorobjev, L. E., Firsov, D. A., Shalygin, V. A., Panevin, V. Yu, Sofronov, A. N., Egorov, A. Yu, Ustinov, V. M., Gladyshev, A. G., Bondarenko, O. V., Andrianov, A. V., Zakhar’in, A. O., Kozlov, D. V.

“…Emission of terahertz radiation from strained Be-doped GaAsN layers has been revealed at 4.2 K in postbreakdown electric fields. Heavy and light hole subbands…”
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Terahertz Emission due to Radiative Decay of Hot 2D Plasmons in AlGaN/GaN Heterojunction by Shalygin, V. A., Arteev, D. S., Lundin, W. V., Korotyeyev, V. V., Suihkonen, S., Kauppinen, C., Moldavskaya, M. D., Vinnichenko, M. Ya, Panevin, V. Yu, Maremyanin, K. V., Firsov, D. A., Vorobjev, L. E., Sakharov, A. V., Zavarin, E. E.

“…Emission of terahertz radiation from a AlGaN/GaN/Al 2 O 3 heterostructure with a surface metal grating is investigated under conditions of 2D electron heating…”
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Absorption and emission of terahertz radiation in doped GaAs/AlGaAs quantum wells by Firsov, D. A., Vorobjev, L. E., Shalygin, V. A., Panevin, V. Yu, Sofronov, A. N., Ganichev, S. D., Danilov, S. N., Andrianov, A. V., Zakhar’in, A. O., Zhukov, A. E., Mikhrin, V. S., Vasil’ev, A. P.

“…Spontaneous emission of terahertz radiation from structures with GaAs/AlGaAs quantum wells in a longitudinal magnetic field has been studied. It is shown that…”
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Temperature evolution of the photoexcited charge carriers dynamics in Ge/Si quantum dots by Balagula, R.M., Sofronov, A.N., Vorobjev, L.E., Firsov, D.A., Tonkikh, A.A.

“…The kinetics of the photoinduced mid-infrared intraband hole absorption after the short interband excitation pulse has been studied in an dense array of…”
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Acceptor-related infrared optical absorption in GaAs/AlGaAs quantum wells by Vinnichenko, M. Ya, Makhov, I.S., Panevin, V. Yu, Vorobjev, L.E., Sorokin, S.V., Sedova, I.V., Firsov, D.A.

“…The results of the theoretical and experimental investigations of optical response of the acceptor centers in narrow GaAs/AlGaAs quantum wells in the infrared…”
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Distribution function, population inversion and FIR gain of hot holes in germanium in crossed electric and magnetic fields by VOROBJEV, L. E, DANILOV, S. N, STAFEEV, V. I

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Terahertz photoluminescence of the donor doped GaAs/AlGaAs quantum wells controlled by the near-infrared stimulated emission by Makhov, I.S., Panevin, V.Yu, Firsov, D.A., Vorobjev, L.E., Vasil'ev, A.P., Maleev, N.A.

“…The low-temperature terahertz and near-infrared photoluminescence from the near-infrared laser nanostructure with GaAs/AlGaAs quantum wells doped with shallow…”
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Observation of intersubband real-space transfer in GaAs/AlAs quantum-well structures due to Γ–X mixing by Schmidt, S. R., Zibik, E. A., Seilmeier, A., Vorobjev, L. E., Zhukov, A. E., Ustinov, U. M.

“…The Γ2–Xz1 intersubband dynamics in GaAs/AlAs quantum-well structures is investigated by time-resolved infrared pump and probe experiments. In the studied…”
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A dual-color injection laser based on intra- and inter-band carrier transitions in semiconductor quantum wells or quantum dots by Kastalsky, A., Vorobjev, L.E., Firsov, A., Zerova, V.L., Towe, E.

“…A new type of semiconductor injection laser capable of simultaneously generating radiation in the mid-infrared (MIR) (/spl lambda//spl sim/10 /spl mu/m) and…”
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