Search Results - "Vollertsen, R."
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1
Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process
Published in Microelectronics and reliability (01-09-2016)“…This work describes and discusses fast wafer level reliability (fWLR) Monitoring as a supporting procedure on productive wafers to achieve stringent quality…”
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2
NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling
Published in IEEE transactions on electron devices (01-04-2019)“…We investigate the negative-bias temperature instability (NBTI) degradation and recovery of pMOSFETs under continuously varying analog-circuit stress voltages…”
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3
On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques
Published in IEEE transactions on electron devices (01-12-2002)“…Critically examined several important aspects concerning the experimental determination of Weibull shape factors (slopes). Statistical characteristics of…”
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4
A metastasis-on-a-chip approach to explore the sympathetic modulation of breast cancer bone metastasis
Published in Materials today bio (01-01-2022)“…Organ-on-a-chip models have emerged as a powerful tool to model cancer metastasis and to decipher specific crosstalk between cancer cells and relevant…”
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5
Nanoparticle Printing for Microfluidic Applications: Bipolar Electrochemistry and Localized Raman Sensing Spots
Published in Micromachines (Basel) (15-02-2023)“…The local integration of metal nanoparticle films on 3D-structured polydimethylsiloxane (PDMS)-based microfluidic devices is of high importance for…”
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6
Systematic characterization of cleanroom-free fabricated macrovalves, demonstrating pumps and mixers for automated fluid handling tuned for organ-on-chip applications
Published in Microsystems & nanoengineering (23-05-2022)“…Integrated valves enable automated control in microfluidic systems, as they can be applied for mixing, pumping and compartmentalization purposes. Such…”
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7
A fWLR test structure and method for device reliability monitoring using product relevant circuits
Published in 2015 IEEE International Reliability Physics Symposium (01-04-2015)“…The measurement of device degradation in product relevant circuits during production monitoring is described. Ring oscillators with local on-chip heaters are…”
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Conference Proceeding -
8
Experimental evidence of TBD power-law for voltage dependence of oxide breakdown in ultrathin gate oxides
Published in IEEE transactions on electron devices (01-12-2002)Get full text
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9
Weibull breakdown characteristics and oxide thickness uniformity
Published in IEEE transactions on electron devices (01-12-2000)“…In this work, we investigated both experimentally and numerically the impact of macroscopic oxide thickness uniformity on Weibull breakdown characteristics for…”
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10
Thin dielectric reliability assessment for DRAM technology with deep trench storage node
Published in Microelectronics and reliability (01-06-2003)“…The reliability results of thin gate oxide and nitride–oxide film development for application in dynamic random access memories are presented. Data and…”
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11
Hot-carrier and recovery effect on p-channel lateral DMOS
Published in 2011 IEEE International Integrated Reliability Workshop Final Report (01-10-2011)“…Hot-carrier, inducing source-drain current (I DS ) increase in high-voltage p-channel lateral DMOS (LDMOS) transistors, is investigated. At low gate voltage (V…”
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Conference Proceeding -
12
Experimental evidence of T/BD/ power-law for voltage dependence of oxide breakdown in ultrathin gate oxides
Published in IEEE transactions on electron devices (01-12-2002)“…In this paper, we present experimental evidence on the voltage-dependence of the voltage acceleration factors observed on ultrathin oxides from 5 nm down to ~1…”
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13
Facilitating implementation of organs-on-chips by open platform technology
Published in Biomicrofluidics (01-09-2021)“…Organ-on-chip (OoC) and multi-organs-on-chip (MOoC) systems have the potential to play an important role in drug discovery, disease modeling, and personalized…”
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14
Highly parallelized human embryonic stem cell differentiation to cardiac mesoderm in nanoliter chambers on a microfluidic chip
Published in Biomedical microdevices (01-06-2021)“…Human stem cell-derived cells and tissues hold considerable potential for applications in regenerative medicine, disease modeling and drug discovery. The…”
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15
Voltage acceleration and t63.2 of 1.6–10 nm gate oxides
Published in Microelectronics and reliability (01-06-2004)“…Gate oxide reliability data collected over a considerable period of time were compiled to assess the voltage acceleration and the time to breakdown as function…”
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16
Applying the universal recovery equation for fast wafer level reliability monitoring NBTI assessment
Published in 2009 IEEE International Reliability Physics Symposium (01-04-2009)“…This work demonstrates that NBTI assessment by fast wafer level reliability methods is possible in a quantitative manner. This involves excluding time periods…”
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Conference Proceeding -
17
Negative Bias Temperature Stress on PFETs within fast Wafer Level Reliability Monitoring
Published in 2008 IEEE International Integrated Reliability Workshop Final Report (01-10-2008)“…The challenges of measuring by means of fast WLR the Vt degradation caused by temperature bias stress are discussed in this work. Two methods, the fast two…”
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Conference Proceeding -
18
Modular operation of microfluidic chips for highly parallelized cell culture and liquid dosing via a fluidic circuit board
Published in Microsystems & nanoengineering (30-11-2020)“…Microfluidic systems enable automated and highly parallelized cell culture with low volumes and defined liquid dosing. To achieve this, systems typically…”
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19
Can macroscopic oxide thickness uniformity improve oxide reliability?
Published in IEEE electron device letters (01-08-2000)“…In this work, we investigated both experimentally and numerically the impact of macroscopic oxide thickness uniformity on Weibull breakdown characteristics for…”
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20
Modelling considerations and development of upper limits of stress conditions for dielectric breakdown projections
Published in Microelectronics and reliability (1996)“…A pragmatic extrapolation model is described which considers the entire measured breakdown distribution(s), so that distributions can be matched which do not…”
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