Search Results - "Vollertsen, R."

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  1. 1

    Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process by Martin, A., Vollertsen, R.-P., Mitchell, A., Traving, M., Beckmeier, D., Nielen, H.

    Published in Microelectronics and reliability (01-09-2016)
    “…This work describes and discusses fast wafer level reliability (fWLR) Monitoring as a supporting procedure on productive wafers to achieve stringent quality…”
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    Journal Article
  2. 2

    NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling by Giering, K.-U., Puschkarsky, K., Reisinger, H., Rzepa, G., Rott, G., Vollertsen, R., Grasser, T., Jancke, R.

    Published in IEEE transactions on electron devices (01-04-2019)
    “…We investigate the negative-bias temperature instability (NBTI) degradation and recovery of pMOSFETs under continuously varying analog-circuit stress voltages…”
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    Journal Article
  3. 3

    On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques by Wu, E.Y., Vollertsen, R.-P.

    Published in IEEE transactions on electron devices (01-12-2002)
    “…Critically examined several important aspects concerning the experimental determination of Weibull shape factors (slopes). Statistical characteristics of…”
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    Journal Article
  4. 4

    A metastasis-on-a-chip approach to explore the sympathetic modulation of breast cancer bone metastasis by Conceição, Francisco, Sousa, Daniela M., Loessberg-Zahl, Joshua, Vollertsen, Anke R., Neto, Estrela, Søe, Kent, Paredes, Joana, Leferink, Anne, Lamghari, Meriem

    Published in Materials today bio (01-01-2022)
    “…Organ-on-a-chip models have emerged as a powerful tool to model cancer metastasis and to decipher specific crosstalk between cancer cells and relevant…”
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    Journal Article
  5. 5

    Nanoparticle Printing for Microfluidic Applications: Bipolar Electrochemistry and Localized Raman Sensing Spots by Broccoli, Alessia, Vollertsen, Anke R, Roels, Pauline, van Vugt, Aaike, van den Berg, Albert, Odijk, Mathieu

    Published in Micromachines (Basel) (15-02-2023)
    “…The local integration of metal nanoparticle films on 3D-structured polydimethylsiloxane (PDMS)-based microfluidic devices is of high importance for…”
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    Journal Article
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  7. 7

    A fWLR test structure and method for device reliability monitoring using product relevant circuits by Vollertsen, R.-P, Georgakos, G., Kolpin, K., Olk, C.

    “…The measurement of device degradation in product relevant circuits during production monitoring is described. Ring oscillators with local on-chip heaters are…”
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    Conference Proceeding
  8. 8
  9. 9

    Weibull breakdown characteristics and oxide thickness uniformity by Wu, E.Y., Nowak, E.J., Vollertsen, R.-P., Han, L.-K.

    Published in IEEE transactions on electron devices (01-12-2000)
    “…In this work, we investigated both experimentally and numerically the impact of macroscopic oxide thickness uniformity on Weibull breakdown characteristics for…”
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    Journal Article
  10. 10

    Thin dielectric reliability assessment for DRAM technology with deep trench storage node by Vollertsen, R.-P.

    Published in Microelectronics and reliability (01-06-2003)
    “…The reliability results of thin gate oxide and nitride–oxide film development for application in dynamic random access memories are presented. Data and…”
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    Journal Article
  11. 11

    Hot-carrier and recovery effect on p-channel lateral DMOS by Aresu, S., Vollertsen, R.-P, Rudolf, R., Schlunder, C., Reisinger, H., Gustin, W.

    “…Hot-carrier, inducing source-drain current (I DS ) increase in high-voltage p-channel lateral DMOS (LDMOS) transistors, is investigated. At low gate voltage (V…”
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    Conference Proceeding
  12. 12

    Experimental evidence of T/BD/ power-law for voltage dependence of oxide breakdown in ultrathin gate oxides by Wu, E Y, Vayshenker, A, Nowak, E, Sune, J, Vollertsen, R-P, Lai, W, Harmon, D

    Published in IEEE transactions on electron devices (01-12-2002)
    “…In this paper, we present experimental evidence on the voltage-dependence of the voltage acceleration factors observed on ultrathin oxides from 5 nm down to ~1…”
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    Journal Article
  13. 13

    Facilitating implementation of organs-on-chips by open platform technology by Vollertsen, Anke R., Vivas, Aisen, van Meer, Berend, van den Berg, Albert, Odijk, Mathieu, van der Meer, Andries D.

    Published in Biomicrofluidics (01-09-2021)
    “…Organ-on-chip (OoC) and multi-organs-on-chip (MOoC) systems have the potential to play an important role in drug discovery, disease modeling, and personalized…”
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    Journal Article
  14. 14

    Highly parallelized human embryonic stem cell differentiation to cardiac mesoderm in nanoliter chambers on a microfluidic chip by Vollertsen, Anke R., Den, Simone A. ten, Schwach, Verena, van den Berg, Albert, Passier, Robert, van der Meer, Andries D., Odijk, Mathieu

    Published in Biomedical microdevices (01-06-2021)
    “…Human stem cell-derived cells and tissues hold considerable potential for applications in regenerative medicine, disease modeling and drug discovery. The…”
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    Journal Article
  15. 15

    Voltage acceleration and t63.2 of 1.6–10 nm gate oxides by Vollertsen, R.-P., Wu, E.Y.

    Published in Microelectronics and reliability (01-06-2004)
    “…Gate oxide reliability data collected over a considerable period of time were compiled to assess the voltage acceleration and the time to breakdown as function…”
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    Journal Article
  16. 16

    Applying the universal recovery equation for fast wafer level reliability monitoring NBTI assessment by Vollertsen, R.-P., Reisinger, H., Aresu, S., Schlunder, C.

    “…This work demonstrates that NBTI assessment by fast wafer level reliability methods is possible in a quantitative manner. This involves excluding time periods…”
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    Conference Proceeding
  17. 17

    Negative Bias Temperature Stress on PFETs within fast Wafer Level Reliability Monitoring by Vollertsen, R.-P., Reisinger, H., Schlunder, C.

    “…The challenges of measuring by means of fast WLR the Vt degradation caused by temperature bias stress are discussed in this work. Two methods, the fast two…”
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    Conference Proceeding
  18. 18

    Modular operation of microfluidic chips for highly parallelized cell culture and liquid dosing via a fluidic circuit board by Vollertsen, A. R., de Boer, D., Dekker, S., Wesselink, B. A. M., Haverkate, R., Rho, H. S., Boom, R. J., Skolimowski, M., Blom, M., Passier, R., van den Berg, A., van der Meer, A. D., Odijk, M.

    Published in Microsystems & nanoengineering (30-11-2020)
    “…Microfluidic systems enable automated and highly parallelized cell culture with low volumes and defined liquid dosing. To achieve this, systems typically…”
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    Journal Article
  19. 19

    Can macroscopic oxide thickness uniformity improve oxide reliability? by Wu, E.Y., Nowak, E.J., Vollertsen, R.-P.

    Published in IEEE electron device letters (01-08-2000)
    “…In this work, we investigated both experimentally and numerically the impact of macroscopic oxide thickness uniformity on Weibull breakdown characteristics for…”
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    Journal Article
  20. 20

    Modelling considerations and development of upper limits of stress conditions for dielectric breakdown projections by Vollertsen, R.-P., Abadeer, W.W.

    Published in Microelectronics and reliability (1996)
    “…A pragmatic extrapolation model is described which considers the entire measured breakdown distribution(s), so that distributions can be matched which do not…”
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    Journal Article