GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates

GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates

Molecular-beam epitaxial growth of Si-doped GaAs single-crystal layers on (110)-oriented GaAs substrates has been studied. The surface morphology of grown films was analyzed by scanning electron microscopy and atomic force microscopy, and the crystal structure of grown films was estimated by X-ray g...

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Bibliographic Details
Published in:Crystals (Basel) Vol. 13; no. 1; p. 28
Main Authors: Klimov, Evgeniy, Klochkov, Aleksey, Pushkarev, Sergey, Galiev, Galib, Galiev, Rinat, Yuzeeva, Nataliya, Zaitsev, Aleksey, Volkovsky, Yury, Seregin, Alexey, Prosekov, Pavel
Format: Journal Article
Language:English
Published: Basel MDPI AG 01-01-2023
Subjects:
amphoteric dopant
Crystal defects
Crystal growth
Crystal structure
Current carriers
Epitaxial growth
GaAs
Gallium arsenide
High temperature
Hole conductivity
Islands
Microscopy
Molecular beam epitaxy
Molybdenum
Morphology
oriented substrate
Photoluminescence
photoluminescence spectroscopy
Pole figures
Radiation
reciprocal space mapping
Silicon
Single crystals
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Summary:Molecular-beam epitaxial growth of Si-doped GaAs single-crystal layers on (110)-oriented GaAs substrates has been studied. The surface morphology of grown films was analyzed by scanning electron microscopy and atomic force microscopy, and the crystal structure of grown films was estimated by X-ray grazing incidence diffraction, in-plane pole figures, reciprocal space mapping, and photoluminescence spectroscopy. The type, concentration, and mobility of charge carriers in films were measured by the four-probe method in van der Pauw geometry at temperatures of 300 and 77 K. The possible existence of two areas in growth conditions, where increased concentration and mobility of electrons are achieved, was shown: the first, main area with the highest concentration and mobility values is Tg = 450–500 °C and V/III ratio γ = 20–40, the second, minor one is Tg = 600–680 °C and γ = 40–70. The hole conductivity was obtained at a growth temperature of 580 °C and a low γ value of 16. It was also shown that the defect-free crystal structure of the films grown at high temperatures is not necessarily accompanied by a smooth surface.
ISSN:2073-4352
2073-4352
DOI:10.3390/cryst13010028