Search Results - "Vojak, B A"

Large room-temperature effects from resonant tunneling through AlAs barriers by GOODHUE, W. D, SOLLNER, T. C. L. G, LE, H. Q, BROWN, E. R, VOJAK, B. A

“…At room temperature, we have observed negative differential resistance in AlAs double-barrier structures and a large hysteresis in the current-voltage…”
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Motivating Technical Visionaries in Large American Companies by Hebda, J.M., Vojak, B.A., Griffin, A., Price, R.L.

“…Many studies have been performed previously to investigate different theories of motivation and, more specifically, how to motivate technical professionals…”
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Multistage, monolithic ceramic microdischarge device having an active length of ∼0.27 mm by Vojak, B. A., Park, S.-J., Wagner, C. J., Eden, J. G., Koripella, R., Burdon, J., Zenhausern, F., Wilcox, D. L.

“…A three-stage, multilayer ceramic microdischarge device, having an active length of ∼267 μm and a cylindrical discharge channel 140–150 μm in diameter, has…”
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Gain-loss model for the dependence of the stimulated-emission transition in AlGaAs-GaAs quantum well heterostructures on photoexcitation geometry by VOJAK, B. A, HOLONYAK, N. JR

“…The gain-loss laser oscillation condition is applied to photoexcitation geometries in which phonon-assisted laser operation is observed in AlGaAs-GaAs quantum…”
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Ceramic microdischarge arrays with individually ballasted pixels by von Allmen, P., McCain, S. T., Ostrom, N. P., Vojak, B. A., Eden, J. G., Zenhausern, F., Jensen, C., Oliver, M.

“…Arrays of cylindrical microdischarge devices, ∼200 μm in diameter, have been fabricated with internally recessed annular electrodes in multilayer ceramic…”
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Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth by Tsaur, B-Y, McClelland, R W, Fan, J C C, Gale, R P, Salerno, J P, Vojak, B A, Bozler, C O

“…Single-crystal GaAs layers have been obtained by means of lateral epitaxial overgrowth seeded within stripe openings in a SiO2 mask over GaAs layers grown on…”
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Product attribute bullwhip in the technology planning process and a methodology to reduce it by Vojak, B.A., Suarez-Nunez, C.A.

“…This paper considers the upstream flow of product attribute forecast information often used to drive the technology planning process. It is noted that, while…”
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Structural characterization by transmission electron microscopy of silicon grown over submicrometer-period gratings of deposited tungsten by VOJAK, B. A, RATHMAN, D. D, BURNS, J. A, CABRAL, S. M, EFREMOW, N. N

“…The Si overgrowth of deposited W gratings, which is the most critical step in the fabrication of the overgrown version of the Si permeable base transistor, has…”
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Photopumped laser operation of GaAs doping superlattices by VOJAK, B. A, ZAJAC, G. W, CHAMBERS, F. A, MEESE, J. M, CHUMBLEY, P. E, KALISKI, R. W, HOLONYAK, N. JR, NAM, D. W

“…The photopumped laser operation of GaAs doping superlattices grown by molecular beam epitaxy is reported. As expected, laser emission is at lower energy than…”
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The effect of base-Schottky geometry on Si PBT device performance by Rathman, D.D., Vojak, B.A., Astolfi, D.K., Stern, L.A.

“…Experimental device results are compared with two-dimensional numerical simulations of etched-groove Si permeable base transistors (PBT's). Both the…”
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A self-aligned dual-grating GaAs permeable base transistor by Vojak, B.A., McClelland, R.W., Lincoln, G.A., Calawa, A.R., Flanders, D.C., Geis, M.W.

“…A self-aligned technique has been developed for embedding two submicrometer-period W gratings, one above the other in single-crystal GaAs. This technique has…”
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Transient and noise characteristics of quantum-well heterostructure lasers by Anderson, E. R., Vojak, B. A., Holonyak, N., Stillman, G. E., Coleman, J. J., Dapkus, P. D.

“…The transient and noise characteristics of single and multiple-quantum-well heterostructure lasers grown by metalorganic-chemical vapor depostion are…”
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A comparison of etched-geometry and overgrown silicon permeable base transistors by two-dimensional numerical simulations by Vojak, B.A., Alley, G.D.

“…Etched-geometry and overgrown Si permeable base transistors (PBT's) are compared by using two-dimensional numerical simulations. Because of the asymmetry of…”
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Stimulated emission in a degenerately doped GaAs quantum well by Holonyak, N., Vojak, B. A., Morkoç, H., Drummond, T. J., Hess, K.

“…Data are presented showing that a single GaAs quantum well as small as Lz ≲80 Å can be operated in stimulated emission if supplied sufficiently with electrons,…”
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Phonon contribution to double-heterojunction laser operation by Holonyak, N., Vojak, B. A., Laidig, W. D., Hess, K., Coleman, J. J., Dapkus, P. D.

“…Laser data (77 and 300 K) are presented on two photopumped undoped metallorganic chemical vapor deposition AlxGa1−xAs -GaAs heterostructures with active…”
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High-pressure studies of GaAs-Ga1-xAlxAs quantum wells of widths 26 to 150 Å by UMADEVI VENKASTESWARAN, MEERA CHANDRASEKHAR, CHANDRASEKHAR, H. R, VOJAK, B. A, CHAMBERS, F. A, MEESE, J. M

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Linear, segmented microdischarge array with an active length of ∼1 cm: cw and pulsed operation in the rare gases and evidence of gain on the 460.30 nm transition of Xe by von Allmen, P., Sadler, D. J., Jensen, C., Ostrom, N. P., McCain, S. T., Vojak, B. A., Eden, J. G.

“…A linear, segmented channel, microdischarge array having an ∼80×380 μm2 aperture and an active length of ∼1 cm, has been fabricated in a ceramic multilayer…”
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Temperature dependence of the quantized states in a GaAs-Ga1-xAlxAs superlattice by KANGARLU, A, CHANDRASEKHAR, H. R, CHANDRASEKHAR, M, KAPOOR, Y. M, CHAMBERS, F. A, VOJAK, B. A, MEESE, J. M

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High-density excitonic state in two-dimensional multiple quantum wells by LE, H. Q, LAX, B, VOJAK, B. A, CALAWA, A. R

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High-pressure studies of GaAs-AlxGa1-xAs quantum wells at 300 and 80 K using photoreflectance spectroscopy by KANGARLU, A, CHANDRASEKHAR, H. R, CHANDRASEKHAR, M, KAPOOR, Y. M, CHAMBERS, F. A, VOJAK, B. A, MEESE, J. M

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