Search Results - "Voisin, J.M."

Dynamic stressing of thin tunnel oxides: a way to emulate a single EEPROM cell programming function by Plossu, C, Voisin, J.M, Bos, B, Raynaud, C, Bouchakour, R, Boivin, P, Balland, B

“…An experimental set-up was implemented by which metal-oxide-semiconductor (MOS) capacitors are subjected to bipolar high voltage (up to 20 V) pulses similar to…”
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Analysis of a tube-grid oscillatory contact: methodology for the selection of superficial treatments by Voisin, J.M., Vannes, A.B., Vincent, L., Daviot, J., Giraud, B.

“…To minimize the failure risks (metal loss, cracking) under continuous vibration loadings (fretting) at tube-grid contact of a tubular heat exchanger, a…”
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Extraction and evolution of Fowler-Nordheim tunneling parameters of thin gate oxides under EEPROM-like dynamic degradation by Croci, S., Voisin, J.M., Plossu, C., Raynaud, C., Autran, J.L., Boivin, P., Mirabel, J.M.

“…A new method is presented for the extraction of the Fowler-Nordheim (FN) tunneling parameters of thin gate oxides from experimental current-voltage…”
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