Search Results - "Vodakov, Yu.A"

Experimental and theoretical analysis of sublimation growth of AlN bulk crystals by Makarov, Yu.N., Avdeev, O.V., Barash, I.S., Bazarevskiy, D.S., Chemekova, T.Yu, Mokhov, E.N., Nagalyuk, S.S., Roenkov, A.D., Segal, A.S., Vodakov, Yu.A., Ramm, M.G., Davis, S., Huminic, G., Helava, H.

“…The current status of sublimation growth of aluminum nitride (AlN) bulk crystals is discussed. Growth of AlN single-crystal layers on silicon carbide (SiC)…”
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On mechanisms of sublimation growth of AlN bulk crystals by Segal, A.S, Karpov, S.Yu, Makarov, Yu.N, Mokhov, E.N, Roenkov, A.D, Ramm, M.G, Vodakov, Yu.A

“…A novel model of bulk AlN crystal growth by the sublimation technique is developed. The model takes into account both diffusive and convective transport of…”
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Use of Ta-Container for Sublimation Growth and Doping of SiC Bulk Crystals and Epitaxial Layers by Vodakov, Yu.A., Roenkov, A. D., Ramm, M. G., Mokhov, E. N., Makarov, Yu.N.

“…Analysis of specific features of sublimation growth of bulk SiC crystals in presence of Ta is performed. Control of doping and formation of different SiC…”
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Analysis of sublimation growth of bulk SiC crystals in tantalum container by Karpov, S.Yu, Kulik, A.V, Zhmakin, I.A, Makarov, Yu.N, Mokhov, E.N, Ramm, M.G, Ramm, M.S, Roenkov, A.D, Vodakov, Yu.A

“…Sublimation growth of SiC bulk crystals in tantalum container is studied both experimentally and theoretically. The model of heterogeneous processes occurred…”
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Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas by Segal, A.S, Vorob'ev, A.N, Karpov, S.Yu, Mokhov, E.N, Ramm, M.G, Ramm, M.S, Roenkov, A.D, Vodakov, Yu.A, Makarov, Yu.N

“…Silicon carbide growth by sublimation sandwich method in the atmosphere of an inert gas is studied both experimentally and theoretically. An analytical…”
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Analysis of silicon carbide growth by sublimation sandwich method by Karpov, S.Yu, Makarov, Yu.N., Mokhov, E.N., Ramm, M.G., Ramm, M.S., Roenkov, A.D., Talalaev, R.A., Vodakov, Yu.A.

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Modeling of facet formation in SiC bulk crystal growth by Matukov, I.D., Kalinin, D.S., Bogdanov, M.V., Karpov, S.Yu, Ofengeim, D.Kh, Ramm, M.S., Barash, J.S., Mokhov, E.N., Roenkov, A.D., Vodakov, Yu.A., Ramm, M.G., Helava, H., Makarov, Yu.N.

“…Control of the crystallization front profile is of great importance for various aspects of bulk SiC crystal growth by physical vapor transport. The structural…”
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Erratum to “Modeling of facet formation in SiC bulk crystal growth” [CRYS 266 (2004) 313] by Matukov, I.D, Kalinin, D.S, Bogdanov, M.V, Karpov, S.Yu, Ofengeim, D.Kh, Ramm, M.S, Barash, J.S, Mokhov, E.N, Roenkov, A.D, Vodakov, Yu.A, Ramm, M.G, Helava, H, Makarov, Yu.N

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High rate GaN epitaxial growth by sublimation sandwich method by Vodakov, Yu.A., Mokhov, E.N., Roenkov, A.D., Boiko, M.E., Baranov, P.G.

“…Thick GaN epitaxial layers were grown by the sublimation “sandwich method” (SSM) on SiC substrates at temperatures from 1100°C to 1250°C in ammonia flow…”
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Optimization of sublimation growth of SiC bulk crystals using modeling by Ramm, M.S, Mokhov, E.N, Demina, S.E, Ramm, M.G, Roenkov, A.D, Vodakov, Yu.A, Segal, A.S, Vorob’ev, A.N, Karpov, S.Yu, Kulik, A.V, Makarov, Yu.N

“…Analysis of factors determining growth rate and shape of the crystallization front during sublimation growth of bulk SiC crystals is presented. For this…”
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Transport phenomena in sublimation growth of SiC bulk crystals by Segal, A.S, Vorob’ev, A.N, Karpov, S.Yu, Makarov, Yu.N, Mokhov, E.N, Ramm, M.G, Ramm, M.S, Roenkov, A.D, Vodakov, Yu.A, Zhmakin, A.I

“…Sublimation growth of SiC bulk crystals in the atmosphere of concentrated multi-component vapor is studied using a specially developed model of transport…”
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Growth of silicon carbide bulk crystals by the sublimation sandwich method by Mokhov, E.N., Ramm, M.G., Roenkov, A.D., Vodakov, Yu.A.

“…Sublimation sandwich method used earlier to obtain SiC epilayers is applied for growth of SiC bulk crystals. The possibility to obtain the SiC crystals of…”
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SiC growth in tantalum containers by sublimation sandwich method by Mokhov, E.N., Ramm, M.G., Roenkov, A.D., Vodakov, Yu.A.

“…Tantalum is proposed as container material for the growth of low defect SiC epitaxial layers by providing a graphitefree process environment. It allows the…”
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Electronic and optical properties of vanadium doped silicon carbide crystals grown by the sublimation sandwich method by Muller, St.G., Hofmann, D., Mokhov, E.N., Ramm, M.G., Roenkov, A.D., Vodakov, Yu.A., Winnacker, A.

“…Cathodoluminescence-mapping experiments of n- and p-type 6H SiC intentionally doped with vanadium (V) show a local anti-correlation of the V/sup 4+/ related…”
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