Search Results - "Vobecký, J"

Effect of Neutron Irradiation on High Voltage 4H-SiC Vertical JFET Characteristics: Characterization and Modeling by Popelka, S., Hazdra, P., Sharma, R., Zahlava, V., Vobecky, J.

“…The effect of neutron irradiation on commercial vertical high voltage normally-OFF SiC power N-JFETs was investigated. JFETs were irradiated with 1 MeV neutron…”
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TCAD study of DLC coatings for large-area high-power diodes by Reggiani, S., Balestra, L., Gnudi, A., Gnani, E., Baccarani, G., Dobrzynska, J., Vobecký, J., Tosi, C.

“…The most relevant transport features of doped diamond-like carbon (DLC) films have been implemented in a TCAD setup to provide a theoretical tool to assess the…”
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Doping compensation for increased robustness of fast recovery silicon diodes by Vobecký, J., Záhlava, V., Komarnitskyy, V.

“…High-power diodes with the radiation enhanced diffusion (RED) of Pd are shown to have much higher ruggedness during the reverse recovery compared to that of…”
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Low-temperature radiation controlled diffusion of palladium and platinum in silicon for advanced lifetime control by Vobecký, J., Hazdra, P.

“…Radiation defects produced by helium implantation were used to shape profiles of palladium (Pd) and platinum (Pt) atoms in-diffusing (for 20min at temperatures…”
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Neon implantation and the radiation enhanced diffusion of platinum for the local lifetime control in high-power silicon diodes by Vobecký, J., Záhlava, V., Denker, A., Komarnitskyy, V.

“…About 10 MeV helium and 120 MeV neon implantations were used for the local lifetime control of silicon power diodes with subsequent annealing at 200 °C. DLTS…”
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Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques by Hazdra, P., Vobecký, J., Brand, K.

“…Application of radiation defects for adjustment of power diode parameters is demonstrated. Local lifetime control (LLC) by proton and alpha-particle…”
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Exploring the Silicon Design Limits of Thin Wafer IGBT Technology: The Controlled Punch Through (CPT) IGBT by Vobecky, J., Rahimo, M., Kopta, A., Linder, S.

“…The paper introduces a new controlled punch through (CPT) IGBT buffer for next generation devices, which utilise thin wafers technology. The new concept is…”
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Platinum in-diffusion controlled by radiation defects for advanced lifetime control in high power silicon devices by Hazdra, P., Vobecký, J.

“…The low-temperature (∼700 °C) in-diffusion of platinum (Pt) into the n-type float zone silicon guided and enhanced by radiation damage produced by implantation…”
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Reliability of Contacts for Press-Pack High-Power Devices by Vobecký, J., Kolesnikov, D.

“…Reliability of high-power silicon diodes with different anode contact material (Al, PtSiCu, PtSiCuAu) was tested in the conditions of free-floating silicon in…”
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TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation by Balestra, L., Reggiani, S., Gnudi, A., Gnani, E., Dobrzynska, J., Vobecky, J.

“…The sensitivity of discrete large-area power devices to the design aspects of the termination region and to the charging effects of the electroactive…”
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The application of platinum–silicide anode layer to decrease the static and turn-off losses in high-power P-i-N diode by Vobecký, J., Hazdra, P.

“…The platinum–silicide layer was investigated as the anode contact of a high-power P-i-N diode. The thermal stability at 700 °C was found sufficient for the…”
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Impact of the electron, proton and helium irradiation on the forward I– V characteristics of high-power P–i–N diode by Vobecký, J, Hazdra, P, Záhlava, V

“…2.5 kV/100 A high-power P–i–N diode was electron, proton and helium irradiated in a wide range of irradiation doses with irradiation energies in the MeV range…”
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ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation by Vobecký, J., Hazdra, P., Záhlava, V., Mihaila, A., Berthou, M.

“…4H silicon carbide Schottky diodes were irradiated by 550keV protons with the aim to place the ion range into the low-doped n-type epitaxial layer. The diodes…”
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Divacancy profiles in MeV helium irradiated silicon from reverse I–V measurement by Hazdra, P, Rubeš, J, Vobecký, J

“…The application of high-voltage reverse current to voltage characteristics for characterization of ultra-deep radiation defect profiles in ion irradiated…”
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Advanced Local Lifetime Control for Higher Reliability of Power Devices by Vobecký, J., Hazdra, P.

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Defect distribution in MeV proton irradiated silicon measured by high-voltage current transient spectroscopy by Hazdra, P., Brand, K., Vobecký, J.

“…Current transient spectroscopy (CTS) using high relaxation voltages up to 1 kV is shown to be an effective tool for non-destructive characterization of…”
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Fast Recovery Diode With Novel Local Lifetime Control by Vobecky, J., Hazdra, P.

“…A novel method for local lifetime control in fast recovery power diodes, low-temperature diffusion of palladium controlled by radiation defects, is presented…”
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Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes Over an Extended Temperature Range by Balestra, L., Reggiani, S., Gnudi, A., Gnani, E., Dobrzynska, J., Vobecky, J.

“…The diamond-like carbon (DLC) is important for passivation of junction termination in high power devices due to its excellent electrical, mechanical, and…”
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Helium irradiated high-power P–i–N diode with low ON-state voltage drop by Vobecký, J., Hazdra, P., Záhlava, V.

“…The application of a 300 nm thick platinum silicide (PtSi) layer at the place of the anode contact layer of a soft recovery 2.5 kV/100 A high-power P–i–N diode…”
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Free Carrier Absorption investigations on ion irradiated fast recovery diodes by Perpina, X., Jorda, X., Vellvehi, M., Vobecky, J., Millan, J

“…The combination of emitter control with local lifetime tailoring is experimentally analysed in fast recovery high-power diodes. For this purpose, the carrier…”
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