Search Results - "Vlooswijk, H A"

Flexoelectric rotation of polarization in ferroelectric thin films by Catalan, G., Lubk, A., Vlooswijk, A. H. G., Snoeck, E., Magen, C., Janssens, A., Rispens, G., Rijnders, G., Blank, D. H. A., Noheda, B.

“…Strain engineering enables modification of the properties of thin films using the stress from the substrates on which they are grown. Strain may be relaxed,…”
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Thickness scaling of ferroelastic domains in PbTiO3 films on DyScO3 by Nesterov, O., Matzen, S., Magen, C., Vlooswijk, A. H. G., Catalan, G., Noheda, B.

“…We report on the thickness dependence of the ferroelastic domains of PbTiO3 films grown on (110)-DyScO3 with low thicknesses (up to 240 nm), which fall outside…”
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Smallest 90° domains in epitaxial ferroelectric films by Vlooswijk, A. H. G., Noheda, B., Catalan, G., Janssens, A., Barcones, B., Rijnders, G., Blank, D. H. A., Venkatesan, S., Kooi, B., de Hosson, J. T. M.

“…Periodic ferroelectric-ferroelastic 90° domain patterns with an unprecedented small domain periodicity of 27 nm were observed in thin Pb Ti O 3 films grown on…”
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X-RAY DIFFRACTION OF FERROELECTRIC NANODOMAINS IN PBTIO3 THIN FILMS by Catalan, G., Vlooswijk, A. H. G., Janssens, A., Rispens, G., Redfern, S., Rijnders, G., Blank, D. H. A., Noheda, B.

“…X-ray diffraction constitutes a powerful technique with which to characterise ferroelectric domains. Here we describe the principles of ferroelectric…”
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Giant tunnel electroresistance with PbTiO3 ferroelectric tunnel barriers by Crassous, A., Garcia, V, Bouzehouane, K., Fusil, S., Vlooswijk, A. H. G., Rispens, G., Noheda, B, Bibes, M., Barthélémy, A.

“…The persistency of ferroelectricity in ultrathin films allows their use as tunnel barriers. Ferroelectric tunnel junctions are used to explore the tunneling…”
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Assay of f. VIII-related antigen in a variant of von Willebrand's disease by Over, J, Vlooswijk, H A, Sixma, J J

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Self-aligned two-layer metallization with low series resistance for litho-less contacting of large-area photodiodes by Mok, K.R.C., Qi, L., Vlooswijk, A.H.G., Nanver, L.K.

“…•Litho-less process consists of 1 patterning step and self-alignment of later steps.•TMAH-etched cavities allow 2 levels of Si to be contacted by separate…”
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Comment on "Nanometer resolution piezoresponse force microscopyto study deep submicron ferroelectric and ferroelastic domains"[ Appl. Phys. Lett. 94 , 162903 ( 2009 ) ] by Vlooswijk, A. H. G., Catalan, Gustau, Noheda, Beatriz

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Evaluation of platelet tests for measurement of cell integrity by Akkerman, J W, Doucet-De Bruïne, M H, Gorter, G, De Graaf, S, Holme, S, Lips, J P, Numeuer, A, Over, J, Starkenburg, A E, Trieschnigg, A C, Veen, J V, Vlooswijk, H A, Wester, J, Sixma, J J

“…Various tests were evaluated for their capacity to differentiate between platelet suspensions with different degrees of cell damage. Those suspensions were…”
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Comment on “Nanometer resolution piezoresponse force microscopy to study deep submicron ferroelectric and ferroelastic domains” [Appl. Phys. Lett. 94, 162903 (2009)] by Vlooswijk, A. H. G., Catalan, Gustau, Noheda, Beatriz

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Growth of flat SrRuO3 (111) thin films suitable as bottom electrodes in heterostructures by Rubi, D., Vlooswijk, A.H.G., Noheda, B.

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Growth of flat SrRuO3(111) thin films suitable as bottom electrodes in heterostructures by Rubi, D, Vlooswijk, A. H. G, Noheda, B

“…Thin film growth of ferroelectric or multiferroic materials on SrTiO3(111) with a buffer electrode has been hampered by the difficulty of growing flat…”
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Giant tunnel electroresistance with PbTiO 3 ferroelectric tunnel barriers by Crassous, A., Garcia, V, Bouzehouane, K., Fusil, S., Vlooswijk, A. H. G., Rispens, G., Noheda, B, Bibes, M., Barthélémy, A.

“…The persistency of ferroelectricity in ultrathin films allows their use as tunnel barriers. Ferroelectric tunnel junctions are used to explore the tunneling…”
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Smallest 90o domains in epitaxial ferroelectric films by Vlooswijk, A. H. G, Catalan, G, Janssens, A, Barcones, B, Venkatesan, S, Rijnders, G, Kooi, B, de Hosson, J. T. M, Blank, D. H. A, Noheda, B

“…Ferroelectrics display spontaneous and switchable electrical polarization. Until recently, ferroelectricity was believed to disappear at the nanoscale; now,…”
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Chemical vapor deposition of PureB layers for solar cell application by Mok, K. R. C., Vlooswijk, A. H. G., Derakhshandeh, J., Nanver, L. K.

“…A damage-free Si doping method using chemical vapor deposition of pure boron (PureB) layers is investigated for p + doping of solar cell emitters. After PureB…”
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Evidence of Substrate-Induced Ferroelectric Phase Transition in SrTiO3 by Means of Thermal Measurements by Davitadze, S., Shnaidshtein, I., Fadeev, A., Strukov, B., Shulman, S., Noheda, B., Vlooswijk, A. H.G.

“…The paper reports the results of the temperature dependence measurements of the specific heat for a SrTiO 3 thin (104 nm) film deposited on a DyScO 3…”
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Progress in n-type Si solar cell and module technology for high efficiency and low cost by Dengyuan Song, Jingfeng Xiong, Zhiyan Hu, Gaofei Li, Hongfang Wang, Haijiao An, Bo Yu, Grenko, B., Borden, K., Sauer, K., Roessler, T., Jianhua Cui, Haitao Wang, Bultman, J., Vlooswijk, A. H. G., Venema, P. R.

“…A novel high efficiency solar cell and module technology, named PANDA, using crystalline n-type CZ Si wafers has moved into large-scale production at Yingli…”
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X-RAY DIFFRACTION OF FERROELECTRIC NANODOMAINS IN PBTIO 3 THIN FILMS by Catalan, G., Vlooswijk, A. H. G., Janssens, A., Rispens, G., Redfern, S., Rijnders, G., Blank, D. H. A., Noheda, B.

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Evidence of Substrate-Induced Ferroelectric Phase Transition in SrTiO3 by Means of Thermal Measurements by DAVITADZE, S, SHNAIDSHTEIN, I, FADEEV, A, STRUKOV, B, SHULMAN, S, NOHEDA, B, VLOOSWIJK, A. H. G

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Low-pressure chemical vapor deposition of pureb layers on silicon for p+n junction formation by Mok, K. R. C., Mohammadi, V., Nanver, L. K., de Boer, W. D., Vlooswijk, A. H. G.

“…Ultrashallow junctions were fabricated by chemical vapor deposition of pure boron (PureB) at 95 torr as opposed to atmospheric pressure deposition. The low…”
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