Search Results - "Vlasov, S. A."

Influence of Source Composition on the Planar Growth of Nanowires during Catalytic Growth in a Quasi-Closed Volume by Karlina, L. B., Vlasov, A. S., Smirnova, I. P., Ber, B. Ya, Kazantsev, D. Yu, Tokarev, M. V., Soshnikov, I. P.

“…The possibility of controlling the composition of lateral nanowires by the method of growth under quasi-equilibrium conditions in a quasi-closed volume from…”
Get full text

Silicon-Doped GaSb Grown by MOVPE in a Wide Range of the V/III Ratio by Levin, R. V., Vlasov, A. S., Pushnyi, B. V.

“…The characterization of Si-doped GaSb epitaxial layers, grown by metal-organic vapor-phase epitaxy at a constant SiH 4 flow with a TMSb/TEGa ratio ranging from…”
Get full text

Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks by Lebedev, D. V., Vlasov, A. S., Kulagina, M. M., Troshkov, S. I., Guseva, Yu. A., Pelucchi, E., Gocalinska, A., Juska, G., Romanova, A. Yu, Buriak, P. A., Smirnov, V. I., Shelaev, A. V., Bykov, V. A., Mintairov, A. M.

“…We report a realization of room temperature lasing threshold of 1 μW in GaInP microdisk containing a few self-aggregated InP/GaInP quantum dots (QDs) grown by…”
Get full text

Near-field magnetophotoluminescence spectroscopy of composition fluctuations in InGaAsN by Mintairov, A M, Kosel, T H, Merz, J L, Blagnov, P A, Vlasov, A S, Ustinov, V M, Cook, R E

“…The localization of excitons on quantum-dot-like compositional fluctuations has been observed in temperature-dependent near-field magnetophotoluminescence…”
Get full text

Local piezoelectric doping of monolayer WSe2 by Balunov, P. A., Ankundinov, A. V., Breev, I. D., Dunaevskiy, M. S., Goltaev, A. S., Galimov, A. I., Jmerik, V. N., Likhachev, K. V., Rakhlin, M. V., Toropov, A. A., Vlasov, A. S., Mintairov, A. M.

“…We report non-contact local doping of a monolayer WSe2 transferred onto a piezoelectric substrate having surface potential wells (SPWs) induced by structural…”
Get full text

Gradient Layers in a Four-Component Al–Ga–As–Sn System Growth by Liquid-Phase Epitaxy by Potapovich, N. S., Khvostikov, V. P., Khvostikova, O. A., Vlasov, A. S.

“…The growth of thick (more than 50 μm) Al x Ga 1 – x As gradient layers in the Al–Ga–As–Sn system has been modeled. Sn-doped Al x Ga 1 – x As layers up to 85 μm…”
Get full text

Piezoelectric fields and martensitic transition in spontaneously ordered GaInP2/GaAs epi-layers by Ankudinov, A. V., Bert, N. A., Dunaevskiy, M. S., Galimov, A. I., Kalyuzhnyy, N. A., Mintairov, S. A., Myasoedov, A. V., Pavlov, N. V., Rakhlin, M. V., Salii, R. A., Toropov, A. A., Vlasov, A. S., Pirogov, E. V., Zhukovskyi, M. A., Mintairov, A. M.

“…The effect of lattice relaxation instability (martensitic transition) on piezoelectric fields (EPE) in spontaneously ordered GaInP2/GaAs epitaxial layers was…”
Get full text

Phase Equilibria in the Al–Ga–As–Bi System at 900°C by Khvostikov, V. P., Khvostikova, O. A., Potapovich, N. S., Vlasov, A. S.

“…— Solidus and liquidus isotherms in the Al–Ga–As–Bi system have been modeled for an initial epitaxy temperature of 900°C, which is needed for growing…”
Get full text

Deep-Level Transient Spectroscopy of Defects in AlGaAsSb/GaAs p–i–n Heterostructures by Soldatenkov, F. Yu, Sobolev, M. M., Vlasov, A. S., Rozhkov, A. V.

“…The study investigates high-voltage gradual p 0 – i – n 0 junctions in solid solutions of Al x Ga 1 –  x As 1 –  y Sb y with y up to 15%, which are capable of…”
Get full text

Features of InP on Si Nanowire Growth by Karlina, L. B., Vlasov, A. S., Ilkiv, I. V., Vershinin, A. V., Soshnikov, I. P.

“…The possibility of InP nanowhiskers growth from the saturated phosphorus and indium vapors with V/III ratio of 8–10 in a quasi-closed volume on (111) oriented…”
Get full text

Development of the Technology for Production Power Laser Conventers on Wavelength 1.06 μm by Marichev, A. E., Epoletov, V. S., Pushnyi, B. V., Vlasov, A. S., Lihachev, A. E.

“…The technology for production one and two-cascade power laser converters was presented in this paper. According to the measurement results of the grown…”
Get full text

Piezo-electric fields and state-filling photo-luminescence in natural InP/GaInP2 Wigner molecule structures by Mintairov, A. M., Ankundinov, A. V., Kalyuzhnyy, N. A., Lebedev, D. V., Mintairov, S. A., Pavlov, N. V., Galimov, A. I., Rakhlin, M. V., Salii, R. A., Toropov, A. A., Vlasov, A. S., Barettin, D., der Maur, M. Auf, Blundell, S. A.

“…We used the measurements of the photo-luminescence spectra vs photon pumping and Coulomb blockade charge tuning together with Kelvin probe microscopy to study…”
Get full text

Replacing Tunnel Junctions in InP with Conduction Channels with GaP Crystallites by Marichev, A. E., Epoletov, V. S., Vlasov, A. S., Pushnyi, B. V., Lihachev, A. I., Nashchekin, A. V.

“…The results of investigations by the method of Electron beam-induced current of p–n -junctions based on InP with GaP crystallites in the space charge region…”
Get full text

Atomic ordering and bond relaxation in optical spectra of self-organized InP/GaInP2 Wigner molecule structures by Mintairov, A. M., Lebedev, D. V., Bert, N., Belyaev, K. G., Nevedomskiy, V. N., Rakhlin, M. V., Toropov, A. A., Vlasov, A. S., Gocalinska, A., Juska, G., Pelucchi, E., Arredondo, M. A., Naden, A. B., Shelaev, A. V., Bykov, V. A.

“…We used transmission electron microscopy, Raman, and photoluminescence spectroscopy to identify the effect of CuPt-type GaP-InP atomic ordering (AO) on the…”
Get full text

Selective Area Epitaxy of InP/GaInP2Quantum Dots from Metal-Organic Compounds by Vlasov, A. S., Afanasev, K. M., Galimov, A. I., Kalyuzhnyy, N. A., Lebedev, D. V., Malevskaya, A. V., Mintairov, S. A., Rakhlin, M. V., Salii, R. A., Mozharov, A. M., Mukhin, I. S., Mintairov, A. M.

“…Experiments on the growth of self-assembled InP/GaInP 2 quantum dots in dielectric mask 0.1–1 μm apertures by MOVPE epitaxy have been carried out. A sequence…”
Get full text

Obtaining Anisotypic Heterostructures for a GaSb-Based Photovoltaic Converter Due to Solid-Phase Substitution Reactions by Gagis, G. S., Kuchinskii, V. I., Kazantsev, D. Yu, Ber, B. Ya, Tokarev, M. V., Khvostikov, V. P., Nakhimovich, M. V., Vlasov, A. S., Vasil’ev, V. I.

“…The possibility of manufacturing photovoltaic converter structures due to solid-phase reactions of substitution of Sb atoms in GaSb semiconductor wafers with…”
Get full text

High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy by Levin, R. V., Vlasov, A. S., Smirnov, A. N., Pushnyi, B. V.

“…The results of studies of nominally undoped epitaxial p -GaSb layers grown by metal–organic vapor-phase epitaxy at a ratio TMSb/TEGa in the range from 1 to 50…”
Get full text

Model calculating high-speed collisions between bodies with different shapes and massive metallic obstacles by Vlasov, A. S., Sinani, A. B.

“…The mathematical model of a high-speed collision between bodies with arbitrary elongation and massive metallic obstacles has been suggested. The model is based…”
Get full text

Nanoindentation and near-field spectroscopy of single semiconductor quantum dots by Mintairov, A. M., Sun, K., Merz, J. L., Li, C., Vlasov, A. S., Vinokurov, D. A., Kovalenkov, O. V., Tokranov, V., Oktyabrsky, S.

Get full text

Diffusion of zinc in gallium arsenide with the participation isovalent impurities by Karlina, L.B., Vlasov, A.S., Ber, B.Y., Kazantsev, D.Y.

“…The diffusion of Zn into GaAs in the presence of indium and phosphorus was studied. Zn diffusion was performed from the gas phase in a hydrogen flow under…”
Get full text