Search Results - "Vitchev, R."

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  1. 1

    Surface oxidation of NiTi shape memory alloy by Firstov, G.S, Vitchev, R.G, Kumar, H, Blanpain, B, Van Humbeeck, J

    Published in Biomaterials (01-12-2002)
    “…Mechanically polished NiTi alloy (50 at% Ni) was subjected to heat treatment in air in the temperature range 300–800°C and characterised by scanning electron…”
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    Journal Article
  2. 2

    Cesium redeposition artifacts during low energy ToF-SIMS depth profiling by Vitchev, R.G., Brison, J., Houssiau, L.

    Published in Applied surface science (15-06-2009)
    “…H-terminated Si samples were preloaded with Cs by performing ToF-SIMS depth profiles (250 eV Cs +, 15 keV Ga +) until the steady state was reached both with…”
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    Journal Article
  3. 3

    Measurement and modeling of work function changes during low energy cesium sputtering by Brison, J., Mine, N., Poisseroux, S., Douhard, B., Vitchev, R.G., Houssiau, L.

    Published in Surface science (15-03-2007)
    “…In this paper, a H-terminated silicon wafer was bombarded by low energy cesium ions during ToF-SIMS analysis and work function variations of the target were…”
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    Journal Article
  4. 4

    Depth distribution of Cs implanted into Si at steady-state during dual beam ToF-SIMS profiling by Vitchev, R.G., Brison, J., Houssiau, L.

    Published in Applied surface science (15-12-2008)
    “…The steady-state depth distributions of Cs atoms implanted into a H-terminated Si surface at different energies (250 eV to 2 keV, 45° incidence angle) were…”
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    Journal Article
  5. 5

    X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface by VITCHEV, R. G, PIREAUX, J. J, CONARD, T, BENDER, H, WOLSTENHOLME, J, DEFRANOUX, Chr

    Published in Applied surface science (31-07-2004)
    “…Scaling down of CMOS devices results in a decrease of the gate dielectric thickness. This presents a considerable challenge to the microelectronics as the…”
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    Conference Proceeding Journal Article
  6. 6
  7. 7

    Influence of humidity on the fretting wear of self-mated tetragonal zirconia ceramics by Basu, B, Vitchev, R.G, Vleugels, J, Celis, J.P, Van Der Biest, O

    Published in Acta materialia (14-06-2000)
    “…The influence of different humidity levels on the tribological behaviour of polycrystalline tetragonal zirconia polycrystals (Y-TZP) sliding against commercial…”
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    Journal Article
  8. 8

    Unlubricated fretting wear of TiB2-Containing composites against bearing steel by VLEUGELS, J, BASU, B, HARI KUMAR, K. C, VITCHEV, R. G, VAN DER BIEST, O

    “…Fretting tests under dry unlubricated conditions (22 deg C to 25 deg C, 50 to 55 pct RH) were performed on monolithic TiB sub 2 , TiB sub 2 -based cermet with…”
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    Journal Article
  9. 9

    Transfer of molybdenum sulphide coating material onto corundum balls in fretting wear tests by Zhang, Xiaoling, Vitchev, R.G, Lauwerens, W, He, Jiawen, Celis, J.-P

    Published in Thin solid films (2004)
    “…Transfer films on corundum balls from sulfur deficient molybdenum disulfide (MoS x ) coatings with different crystallographic orientations were investigated…”
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    Journal Article
  10. 10

    Phase composition of Cr-C thin films deposited by a double magnetron sputtering system by Groudeva-Zotova, S., Vitchev, R. G., Blanpain, B.

    Published in Surface and interface analysis (01-08-2000)
    “…Non‐reactive d.c. magnetron sputtering by two magnetron sources with inclined geometry was used for deposition of Cr–C thin films with C : Cr ratio in the…”
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    Journal Article Conference Proceeding
  11. 11

    Surface oxidation of SnTe topological crystalline insulator by Berchenko, N., Vitchev, R., Trzyna, M., Wojnarowska-Nowak, R., Szczerbakow, A., Badyla, A., Cebulski, J., Story, T.

    Published in Applied surface science (15-09-2018)
    “…[Display omitted] •A multicomponent multilayer structure formed during the oxidation of SnTe topological crystalline insulator at ambient conditions was…”
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    Journal Article
  12. 12

    Effective attenuation length of Al Kα-excited Si2p photoelectrons in SiO2, Al2O3 and HfO2 thin films by Vitchev, R G, Defranoux, Chr, Wolstenholme, J, Conard, T, Bender, H, Pireaux, J J

    “…The inelastic mean free path is extensively used as a measure of the surface sensitivity of electron spectroscopies such as XPS and AES. However, the elastic…”
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    Journal Article
  13. 13

    Physical characterization of mixed HfAlOx layers by complementary analysis techniques by Bender, H, Conard, Th, Richard, O, Brijs, B, Pétry, J, Vandervorst, W, Defranoux, C, Boher, P, Rochat, N, Wyon, C, Mack, P, Wolstenholme, J, Vitchev, R, Houssiau, L, Pireaux, J-J, Bergmaier, A, Dollinger, G

    “…The combined information of complementary physical analysis techniques is applied to obtain a full characterisation of the important material parameters of new…”
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    Journal Article
  14. 14

    Electronic spectroscopic study of the tribochemical modifications of TiN–corundum pairs after fretting wear by Vitchev, R.G, Blanpain, B, Celis, J.P

    Published in Wear (01-07-1999)
    “…A TiN coating, deposited by PVD, was rubbed against corundum balls in a laboratory fretting experiment for different number of cycles. The surface composition…”
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    Journal Article
  15. 15

    ToF-SIMS depth profiling of Hf and Al composition variations in ultrathin mixed HfO2/Al2O3 oxides by Houssiau, L., Vitchev, R.G., Conard, T., Vandervorst, W., Bender, H.

    Published in Applied surface science (15-06-2004)
    “…The rapid scaling down of CMOS devices has driven the SiO2-based gate dielectrics technology close to its fundamental limits, governed by large gate leakage…”
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    Journal Article
  16. 16

    An out-of-specification element oxide found in the subsurface layer of Ni superalloys after annealing in air by Berchenko, N., Vitchev, R., Bochnowski, W., Trzyna, M., Adamiak, S., Dziedzic, A., Cebulski, J.

    Published in Corrosion science (01-07-2016)
    “…An out-of-specification element oxide found in the subsurface layer of Ni superalloys after annealing in air. [Display omitted] •An out-of-specification…”
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    Journal Article
  17. 17

    Cesium/xenon co-sputtering at different energies during ToF-SIMS depth profiling by Brison, J., Vitchev, R.G., Houssiau, L.

    “…In this paper, ToF-SIMS dual beam depth profiles of H-terminated silicon wafers were performed with cesium primary ions and for different beam energies. The…”
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    Journal Article
  18. 18

    Emission characteristics of an Au–Ge liquid metal ion source by Georgieva, S, Tzvetkov, T, Vitchev, RG, Drandarov, N

    Published in Vacuum (01-10-1998)
    “…A liquid metal ion source (LMIS), based on an Au 27 at.% Ge eutectic alloy was investigated and the mass spectrum and angular distributions of different ion…”
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    Journal Article
  19. 19

    On the understanding of positive and negative ionization processes during ToF-SIMS depth profiling by co-sputtering with cesium and xenon by Brison, J., Guillot, J., Douhard, B., Vitchev, R.G., Migeon, H.-N., Houssiau, L.

    “…In this paper, ionization processes of secondary ions during ToF-SIMS dual beam depth profiling were studied by co-sputtering with 500 eV cesium and xenon ions…”
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    Journal Article
  20. 20

    Effect of crystallographic orientation on fretting wear behaviour of MoS sub(x) coatings in dry and humid air by Zhang, X, Vitchev, R G, Lauwerens, W, Stals, L, He, J, Celis, J-P

    Published in Thin solid films (21-09-2001)
    “…The tribological behaviour of MoS sub(2) coatings in air of high humidity is critical for their application in air. An improved friction and wear resistance of…”
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    Journal Article