Search Results - "Vishnyakov, N.V."

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  1. 1

    Investigation of recombination centers in the active layers of HIT solar cells by Maslov, A.D., Litvinov, V.G., Ermachikhin, A.V., Vishnyakov, N.V., Gudzev, V.V., Vikhrov, S.P.

    Published in 2020 ELEKTRO (01-05-2020)
    “…In this paper we present results of DLTS investigating HIT solar cells. Analysis of DLTS spectra gave deep level activation energies and concentrations…”
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    Conference Proceeding
  2. 2

    Geomorphological Characteristics, Monitoring and Ways of Optimization of Erosion Processes in a Small Bend of the Don River by Vishnyakov N.V., Kanishchev S.N., Solodovnikov D.A., Semenova D.A., Khavanskaya N.M.

    “…The article analyzes the main geomorphological characteristics of Small meanders of the Don, namely: heterogeneity of geomorphological structure, two-level Don…”
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    Journal Article
  3. 3

    Study of Deep Levels in a HIT Solar Cell by Vikhrov, S. P., Vishnyakov, N. V., Gudzev, V. V., Ermachikhin, A. V., Shilina, D. V., Litvinov, V. G., Maslov, A. D., Mishustin, V. G., Terukov, E. I., Titov, A. S.

    Published in Semiconductors (Woodbury, N.Y.) (01-07-2018)
    “…The results of studying a HIT (heterojunction with an intrinsic thin layer) Ag/ITO/ a -Si:H( p )/ a -Si:H( i )/ c -Si( n )/ a -Si:H( i )/ a -Si:H( n + )/ITO/Ag…”
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    Journal Article
  4. 4

    On a combined approach to studying the correlation parameters of self-organizing structures by Alpatov, A. V., Vikhrov, S. P., Vishnyakov, N. V., Mursalov, S. M., Rybin, N. B., Rybina, N. V.

    Published in Semiconductors (Woodbury, N.Y.) (2016)
    “…The correlation parameters of self-organizing structures are investigated using a combined approach, a combination of 2D detrended fluctuation analysis and the…”
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    Journal Article
  5. 5

    Scanning Near-Field Optical Microscopy of Light Emitting Semiconductor Nanostructures by Ankudinov, A. V., Mintairov, A. M., Slipchenko, S.O., Shelaev, A.V., Yanul, M.L., Dorozhkin, P. S., Vishnyakov, N.V.

    Published in Ferroelectrics (12-03-2015)
    “…A technique of cantilever based scanning near-field optical microscopy is applied. Using InP/GaInP quantum dots structures, 100nm (λ/7) spatial resolution of…”
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    Journal Article
  6. 6

    Phase transitions in thin [Ge.sub.2][Sb.sub.2][Te.sub.5] chalcogenide films according to Raman spectroscopy data by Avachev, A.P, Vikhrov, S.P, Vishnyakov, N.V, Kozyukhin, S.A, Mitrofanov, K.V, Terukov, E.I

    Published in Semiconductors (Woodbury, N.Y.) (01-05-2012)
    “…Data on the Raman spectra of thin [Ge.sub.2][Sb.sub.2][Te.sub.5] chalcogenide semiconductor films are reported. The study is performed with the purpose of…”
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    Journal Article