Search Results - "Visalli, Domenica"

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal by Visalli, Domenica, Van Hove, Marleen, Srivastava, Puneet, Derluyn, Joff, Das, Johan, Leys, Maarten, Degroote, Stefan, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf

“…The breakdown mechanism in GaN-based heterostructures (HFETs) grown on silicon substrate is investigated in detail by TCAD simulations and silicon substrate…”
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Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage by Srivastava, Puneet, Das, Jo, Visalli, Domenica, Derluyn, Joff, Van Hove, Marleen, Malinowski, Pawel E, Marcon, Denis, Geens, Karen, Kai Cheng, Degroote, Stefan, Leys, Maarten, Germain, Marianne, Decoutere, Stefaan, Mertens, Robert P, Borghs, Gustaaf

“…In this letter, we present a novel approach to enhance the breakdown voltage ( V BD ) for AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs), grown by…”
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Electrically active defects at AlN/Si interface studied by DLTS and ESR by Simoen, Eddy, Visalli, Domenica, Van Hove, Marleen, Leys, Maarten, Favia, Paola, Bender, Hugo, Borghs, Gustaaf, Nguyen, Ahn Puc Duc, Stesmans, Andre

“…A combined deep‐level transient spectroscopy (DLTS) and electron spin resonance (ESR) study is performed to identify the electrically active defects at the…”
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Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs by Visalli, D, Van Hove, M, Derluyn, J, Srivastava, P, Marcon, D, Das, J, Leys, M R, Degroote, S, Kai Cheng, Vandenplas, E, Germain, M, Borghs, G

“…We investigated the limitations of the field plate (FP) effect on breakdown voltage V BD that is due to the silicon substrate in AlGaN/GaN/AlGaN double…”
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Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-μm Buffer Thickness by Local Substrate Removal by SRIVASTAVA, Puneet, DAS, Jo, DECOUTERE, Stefaan, MERTENS, Robert P, BORGHS, Gustaaf, VISALLI, Domenica, VAN HOVE, Marleen, MALINOWSKI, Pawel E, MARCON, Denis, LENCI, Silvia, GEENS, Karen, KAI CHENG, LEYS, Maarten

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AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance by Visalli, Domenica, Hove, Marleen Van, Derluyn, Joff, Degroote, Stefan, Leys, Maarten, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf

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A 96% Efficient High-Frequency DC-DC Converter Using E-Mode GaN DHFETs on Si by Das, J., Everts, J., Van Den Keybus, J., Van Hove, M., Visalli, D., Srivastava, P., Marcon, D., Kai Cheng, Leys, M., Decoutere, S., Driesen, J., Borghs, G.

“…III-Nitride materials are very promising to be used in next-generation high-frequency power switching applications. In this letter, we demonstrate the…”
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Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications by Fleury, Clément, Zhytnytska, Rimma, Bychikhin, Sergey, Cappriotti, Mattia, Hilt, Oliver, Visalli, Domenica, Meneghesso, Gaudenzio, Zanoni, Enrico, Würfl, Joachim, Derluyn, Joff, Strasser, Gottfried, Pogany, Dionyz

“…•Probability distribution functions of GaN buffer breakdown voltage were determined.•A time dependent behaviour of vertical breakdown was observed.•Vertical…”
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Experimental and simulation study of breakdown voltage enhancementof AlGaN/GaN heterostructures by Si substrate removal by Visalli, Domenica, Van Hove, Marleen, Srivastava, Puneet, Derluyn, Joff, Das, Johan, Leys, Maarten, Degroote, Stefan, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf

“…The breakdown mechanism in GaN-based heterostructures (HFETs) grown on silicon substrate is investigated in detail by TCAD simulations and silicon substrate…”
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Limitations of Field Plate Effect Due to the Silicon Substrate in AIGaN/GaN/AIGaN DHFETs by VISALLI, Domenica, VAN HOVE, Marleen, GERMAIN, Marianne, BORGHS, Gustaaf, DERLUYN, Joff, SRIVASTAVA, Puneet, MARCON, Denis, DAS, Jo, REINIER LEYS, Maarten, DEGROOTE, Stefan, KAI CHENG, VANDENPLAS, Erwin

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Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- \mu\hbox Buffer Thickness by Local Substrate Removal by Srivastava, Puneet, Das, Jo, Visalli, Domenica, Van Hove, Marleen, Malinowski, Pawel E, Marcon, Denis, Lenci, Silvia, Geens, Karen, Kai Cheng, Leys, Maarten, Decoutere, Stefaan, Mertens, Robert P, Borghs, Gustaaf

“…In this letter, we present a local substrate removal technology (under the source-to-drain region), reminiscent of through-silicon vias and report on the…”
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Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-[Formula Omitted] Buffer Thickness by Local Substrate Removal by Srivastava, Puneet, Das, Jo, Visalli, Domenica, Van Hove, Marleen, Malinowski, Pawel E, Marcon, Denis, Lenci, Silvia, Geens, Karen, Cheng, Kai, Leys, Maarten, Decoutere, Stefaan, Mertens, Robert P, Borghs, Gustaaf

“…In this letter, we present a local substrate removal technology (under the source-to-drain region), reminiscent of through-silicon vias and report on the…”
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Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- mu hbox m Buffer Thickness by Local Substrate Removal by Srivastava, Puneet, Das, Jo, Visalli, Domenica, Van Hove, Marleen, Malinowski, Pawel E, Marcon, Denis, Lenci, Silvia, Geens, Karen, Cheng, Kai, Leys, Maarten, Decoutere, Stefaan, Mertens, Robert P, Borghs, Gustaaf

“…In this letter, we present a local substrate removal technology (under the source-to-drain region), reminiscent of through-silicon vias and report on the…”
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Excellent Stability of GaN-on-Si High Electron Mobility Transistors with 5 \mbox{$\mu$m} Gate--Drain Spacing Tested in Off-State at a Record Drain Voltage of 200 V and 200 \mbox{\circC} by Marcon, Denis, Van Hove, Marleen, Visalli, Domenica, Derluyn, Joff, Das, Jo, Medjdoub, Farid, Degroote, Stefan, Leys, Maarten, Cheng, Kai, Mertens, Robert, Germain, Marianne, Borghs, Gustaaf

“…AlGaN/GaN high electron mobility transistors (HEMTs) were electrically stressed in pinch-off condition at a drain voltage up to 200 V for 200 h at an ambient…”
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Excellent Stability of GaN-on-Si High Electron Mobility Transistors with 5 µm Gate–Drain Spacing Tested in Off-State at a Record Drain Voltage of 200 V and 200 °C by Marcon, Denis, Hove, Marleen Van, Visalli, Domenica, Derluyn, Joff, Das, Jo, Medjdoub, Farid, Degroote, Stefan, Leys, Maarten, Cheng, Kai, Mertens, Robert, Germain, Marianne, Borghs, Gustaaf

“…AlGaN/GaN high electron mobility transistors (HEMTs) were electrically stressed in pinch-off condition at a drain voltage up to 200 V for 200 h at an ambient…”
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High temperature on- and off-state stress of GaN-on-Si HEMTs with in-situ Si3N4 cap layer by Marcon, Denis, Medjdoub, Farid, Visalli, Domenica, Van Hove, Marleen, Derluyn, Joff, Das, Jo, Degroote, Stefan, Leys, Maarten, Kai Cheng, Decoutere, Stefaan, Mertens, Robert, Germain, Marianne, Borghs, Gustaaf

“…In this work the stability of Gallium Nitride based high electron mobility transistors grown on 4-in Si substrate (GaN-on-Si HEMTs) were tested both in…”
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Water and Copper Contamination in SiOC:H Damascene: Novel Characterization Methodology based on Triangular Voltage Sweep Measurements by Ciofi, I., Tokei, Z., Visalli, D., Van Hove, M.

“…We evaluated the triangular voltage sweep (TVS) method as a new technique to address the degradation mechanisms that occur in Cu/low-k interconnects. TVS…”
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