Search Results - "Visalli, D."

Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate by Medjdoub, F., Derluyn, J., Cheng, K., Leys, M., Degroote, S., Marcon, D., Visalli, D., Van Hove, M., Germain, M., Borghs, G.

“…Ultrathin-barrier normally off AlN/GaN/AlGaN double-heterostructure field-effect transistors using an in situ SiN cap layer have been fabricated on 100-mm Si…”
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Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability by Capriotti, M., Alexewicz, A., Fleury, C., Gavagnin, M., Bethge, O., Visalli, D., Derluyn, J., Wanzenböck, H. D., Bertagnolli, E., Pogany, D., Strasser, G.

“…Using a generalized extraction method, the fixed charge density Nint at the interface between in situ deposited SiN and 5 nm thick AlGaN barrier is evaluated…”
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Correlation between trench depth and TDDB thermal activation energy in single damascene Cu/SiOC:H by Li, Y.-L., Ciofi, I., Visalli, D., Van Aelst, J., Groeseneken, G., Maex, K., To˝kei, Zs

“…In this paper, the thermal acceleration behavior of time dependent dielectric breakdown (TDDB) and its dependence on the trench depth of Cu/SiOC:H single…”
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A 96% Efficient High-Frequency DC-DC Converter Using E-Mode GaN DHFETs on Si by Das, J., Everts, J., Van Den Keybus, J., Van Hove, M., Visalli, D., Srivastava, P., Marcon, D., Kai Cheng, Leys, M., Decoutere, S., Driesen, J., Borghs, G.

“…III-Nitride materials are very promising to be used in next-generation high-frequency power switching applications. In this letter, we demonstrate the…”
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Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al{sub 2}O{sub 3} in AlGaN/GaN high electron mobility transistors with normally off capability by Capriotti, M., Alexewicz, A., Fleury, C., Gavagnin, M., Bethge, O., Wanzenböck, H. D., Bertagnolli, E., Pogany, D., Strasser, G., Visalli, D., Derluyn, J.

“…Using a generalized extraction method, the fixed charge density N{sub int} at the interface between in situ deposited SiN and 5 nm thick AlGaN barrier is…”
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Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance by Srivastava, P., Oprins, H., Van Hove, M., Das, J., Malinowski, P. E., Bakeroot, B., Marcon, D., Visalli, D., Kang, X., Lenci, S., Geens, K., Viaene, J., Cheng, K., Leys, M., De Wolf, I., Decoutere, S., Mertens, R. P., Borghs, G.

“…We report on the first measurement results to obtain over 2 kV breakdown voltage (V BD ) of GaN-DHFETs on Si substrates by etching a Si Trench Around Drain…”
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Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs by Visalli, D, Van Hove, M, Derluyn, J, Srivastava, P, Marcon, D, Das, J, Leys, M R, Degroote, S, Kai Cheng, Vandenplas, E, Germain, M, Borghs, G

“…We investigated the limitations of the field plate (FP) effect on breakdown voltage V BD that is due to the silicon substrate in AlGaN/GaN/AlGaN double…”
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GaN-on-Si power field effect transistors by Germain, M, Derluyn, J, Van Hove, M, Medjdoub, F, Das, J, Cheng, S D K, Leys, M, Visalli, D, Marcon, D, Geens, K, Viaene, J, Sijmus, B, Decoutere, S, Cartuyvels, R, Borghs, G

“…GaN-on-Si has become the most promising technology for next-generation power switching devices to overcome intrinsic Si limits for high temperature operation,…”
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Water and Copper Contamination in SiOC:H Damascene: Novel Characterization Methodology based on Triangular Voltage Sweep Measurements by Ciofi, I., Tokei, Z., Visalli, D., Van Hove, M.

“…We evaluated the triangular voltage sweep (TVS) method as a new technique to address the degradation mechanisms that occur in Cu/low-k interconnects. TVS…”
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Non-invasive treatment of the sigmoid volvulus. A pediatric case report by Visalli, Carmela, Trimarchi, Renato, Spatola, Antonella, Miano, Sebastiano Maria, Salamone, Ignazio

“…Sigmoid volvulus occurs when the sigmoid colic loop gets wrapped around its own mesocolon. While this condition is categorized as an extremely rare emergency…”
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Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4 by Derluyn, J., Van Hove, M., Visalli, D., Lorenz, A., Marcon, D., Srivastava, P., Geens, K., Sijmus, B., Viaene, J., Kang, X., Das, J., Medjdoub, F., Cheng, K., Degroote, S., Leys, M., Borghs, G., Germain, M.

“…We describe the fabrication and characteristics of high voltage enhancement mode SiN/AlGaN/GaN/AlGaN double heterostructure FET devices. The Si 3 N 4 not only…”
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Radiological evaluation of a case of chronic intestinal pseudo-obstruction (CIPO) by Trimarchi, Renato, Visalli, Carmela, Quartararo, Chiara, Lucanto, Maria Cristina, Nardo, Giovanni Di, Turiaco, Nunzio, Salamone, Ignazio

“…Chronic intestinal pseudo-obstruction (CIPO) is a severe form of gastrointestinal dysmotility (often due to derangement of the innervation and/or smooth muscle…”
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Diagnostic Approach to Retromolar Trigone Cancer by Multiplanar Computed Tomography Reconstructions by Mazziotti, Silvio, MD, Pandolfo, Ignazio, MD, D'Angelo, Tommaso, MD, Mileto, Achille, MD, Visalli, Carmela, MD, Racchiusa, Santi, MD, Blandino, Alfredo, MD, Ascenti, Giorgio, MD

“…Abstract Neoplasms of retromolar trigone have important peculiarities due to their spatial relationships with the surrounding structures. Tumours that involve…”
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