Search Results - "Virojanadara, Chariya"

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  1. 1

    High thermal stability quasi-free-standing bilayer graphene formed on 4H–SiC(0001) via platinum intercalation by Xia, Chao, Johansson, Leif I., Niu, Yuran, Zakharov, Alexei A., Janzén, Erik, Virojanadara, Chariya

    Published in Carbon (New York) (01-11-2014)
    “…Influences on electronic structure induced by platinum (Pt) deposited on monolayer graphene grown on SiC(0001) are investigated by photoelectron spectroscopy…”
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  2. 2

    Ytterbium oxide formation at the graphene–SiC interface studied by photoemission by Watcharinyanon, Somsakul, Johansson, Leif I., Xia, Chao, Virojanadara, Chariya

    “…Synchrotron-based core level and angle resolved photoemission spectroscopy was used to study the formation of ytterbium (Yb) oxide at the graphene–SiC…”
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  3. 3

    Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC by Johansson, Leif, Xia, Chao, Hassan, Jawad, Iakimov, Tihomir, Zakharov, Alexei, Watcharinyanon, Somsakul, Yakimova, Rositza, Janzén, Erik, Virojanadara, Chariya

    Published in Crystals (Basel) (01-03-2013)
    “…Graphene grown on C-face SiC substrates using two procedures, high and low growth temperature and different ambients, was investigated using Low Energy…”
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  4. 4

    The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC by Eriksson, Jens, Pearce, Ruth, Iakimov, Tihomir, Virojanadara, Chariya, Gogova, Daniela, Andersson, Mike, Syväjärvi, Mikael, Lloyd Spetz, Anita, Yakimova, Rositza

    Published in Applied physics letters (11-06-2012)
    “…A pivotal issue for the fabrication of electronic devices on epitaxial graphene on SiC is controlling the number of layers and reducing localized thickness…”
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  5. 5

    Properties of epitaxial graphene grown on C-face SiC compared to Si-face by Johansson, Leif I., Virojanadara, Chariya

    Published in Journal of materials research (14-02-2014)
    “…Epitaxial graphene of uniform thickness prepared on SiC is of great interest for various applications. On the Si-face, large area uniformity has been achieved,…”
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  6. 6

    Hydrogen intercalation of graphene grown on 6H-SiC(0001) by Watcharinyanon, S., Virojanadara, C., Osiecki, J.R., Zakharov, A.A., Yakimova, R., Uhrberg, R.I.G., Johansson, L.I.

    Published in Surface science (01-09-2011)
    “…Atomic hydrogen exposures on a monolayer graphene grown on the SiC(0001) surface are shown to result in hydrogen intercalation. The hydrogen intercalation…”
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  7. 7

    Multiple π-bands and Bernal stacking of multilayer graphene on C-face SiC, revealed by nano-Angle Resolved Photoemission by Johansson, Leif I., Armiento, Rickard, Avila, Jose, Xia, Chao, Lorcy, Stephan, Abrikosov, Igor A., Asensio, Maria C., Virojanadara, Chariya

    Published in Scientific reports (24-02-2014)
    “…Only a single linearly dispersing π-band cone, characteristic of monolayer graphene, has so far been observed in Angle Resolved Photoemission (ARPES)…”
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  8. 8

    Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface by Chen, Jr-Tai, Pomeroy, James W., Rorsman, Niklas, Xia, Chao, Virojanadara, Chariya, Forsberg, Urban, Kuball, Martin, Janzén, Erik

    Published in Journal of crystal growth (2015)
    “…The crystalline quality of AlGaN/GaN heterostructures was improved by optimization of surface pretreatment of the SiC substrate in a hot-wall metal-organic…”
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  9. 9

    Li induced effects in the core level and π-band electronic structure of graphene grown on C-face SiC by Johansson, Leif I., Xia, Chao, Virojanadara, Chariya

    “…Studies of the effects induced in the electronic structure after Li deposition, and subsequent heating, on graphene samples prepared on C-face SiC are…”
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  10. 10

    Stacking of adjacent graphene layers grown on C-face SiC by Johansson, L. I., Watcharinyanon, S., Zakharov, A. A., Iakimov, T., Yakimova, R., Virojanadara, C.

    “…Graphene was grown on the C-face of nominally on-axis SiC substrates using high-temperature sublimation with Ar as the buffer inert gas. The results of studies…”
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  11. 11

    Buffer layer free large area bi-layer graphene on SiC(0 0 0 1) by Virojanadara, C., Zakharov, A.A., Yakimova, R., Johansson, L.I.

    Published in Surface science (2010)
    “…The influence of hydrogen exposures on monolayer graphene grown on the silicon terminated SiC(0 0 0 1) surface is investigated using photoelectron spectroscopy…”
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  12. 12

    Rb and Cs deposition on epitaxial graphene grown on 6H-SiC(0001) by Watcharinyanon, S., Virojanadara, C., Johansson, L.I.

    Published in Surface science (01-11-2011)
    “…Epitaxial graphene grown on the silicon-terminated SiC(0001) is doped by alkali metals deposited on the surface. The synchrotron radiation based photoelectron…”
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  13. 13

    Effects of rhenium on graphene grown on SiC(0001) by Xia, Chao, Tal, Alexey A., Johansson, Leif I., Olovsson, Weine, Abrikosov, Igor A., Jacobi, Chariya

    “…•The shift of 4f state in Re atoms on graphene is observed under elevated temperatures.•DFT calculation were performed in order to investigate the observed…”
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  14. 14

    A low-energy electron microscopy and x-ray photo-emission electron microscopy study of Li intercalated into graphene on SiC(0001) by Virojanadara, C, Zakharov, A A, Watcharinyanon, S, Yakimova, R, Johansson, L I

    Published in New journal of physics (13-12-2010)
    “…The effects induced by the deposition of Li on 1 and 0 ML graphene grown on SiC(0001) and after subsequent heating were investigated using low-energy electron…”
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  15. 15

    Detailed studies of Na intercalation on furnace-grown graphene on 6H-SiC(0001) by Xia, C., Watcharinyanon, S., Zakharov, A.A., Johansson, L.I., Yakimova, R., Virojanadara, C.

    Published in Surface science (01-07-2013)
    “…The effects induced by Na deposited on furnace grown graphene on SiC(0001) and after subsequent annealing are investigated using LEEM, μ-LEED, μ-PES and XPEEM…”
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  16. 16

    Epitaxial graphene on 6H-SiC and Li intercalation by Virojanadara, Chariya, Watcharinyanon, Somsakul, Zakharov, A A, Johansson, Leif I

    “…The influence of lithium (Li) exposures on monolayer graphene grown on the silicon-terminated SiC(0001) surface is investigated using low-energy electron…”
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  17. 17

    Homogeneous large-area graphene layer growth on 6H-SiC(0001) by Virojanadara, Chariya, Syväjärvi, Mikael, Yakimova, Rositsa, Johansson, Leif, Zakharov, A A, Balasubramanian, T

    “…Homogeneous large-area graphene monolayers were successfully prepared ex situ on 6H-SiC(0001). The samples have been studied systematically and the results are…”
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  18. 18

    Correction: Corrigendum: Multiple π-bands and Bernal stacking of multilayer graphene on C-face SiC, revealed by nano-Angle Resolved Photoemission by Johansson, Leif I., Armiento, Rickard, Avila, Jose, Xia, Chao, Lorcy, Stephan, Abrikosov, Igor A., Asensio, Maria C., Virojanadara, Chariya

    Published in Scientific reports (08-07-2014)
    “…Only a single linearly dispersing π-band cone, characteristic of monolayer graphene, has so far been observed in Angle Resolved Photoemission (ARPES)…”
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    Journal Article
  19. 19

    Substrate orientation: A way towards higher quality monolayer graphene growth on 6H-SiC(0 0 0 1) by Virojanadara, C., Yakimova, R., Osiecki, J.R., Syväjärvi, M., Uhrberg, R.I.G., Johansson, L.I., Zakharov, A.A.

    Published in Surface science (01-08-2009)
    “…The influence of substrate orientation on the morphology of graphene growth on 6H-SiC(0 0 0 1) was investigated using low-energy electron and scanning…”
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  20. 20

    Reactions on the SiC(0001) root 3 x root 3 R30 degrees surface after Ti deposition and annealing by Johansson, Leif I, Virojanadara, Chariya

    Published in Physica status solidi. B, Basic research (01-03-2011)
    “…The interactions of thin Ti layers deposited on the SiC(0001) root 3 x root 3 R30 degrees surface at room temperature and after annealing at temperatures from…”
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