Search Results - "Virbulis, J."

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  1. 1

    3D modeling of doping from the atmosphere in floating zone silicon crystal growth by Sabanskis, A., Surovovs, K., Virbulis, J.

    Published in Journal of crystal growth (01-01-2017)
    “…Three-dimensional numerical simulations of the inert gas flow, melt flow and dopant transport in both phases are carried out for silicon single crystal growth…”
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    Journal Article
  2. 2

    3D modeling of growth ridge and edge facet formation in 〈100〉 floating zone silicon crystal growth process by Krauze, A., Virbulis, J., Zitzelsberger, S., Ratnieks, G.

    Published in Journal of crystal growth (15-08-2019)
    “…•Ridge growth on 4″ and 5″ Si crystals was modeled.•Characteristic ridge formation due to {111} facet development was observed.•Azimuthal widths of the…”
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    Journal Article
  3. 3

    Simulation of the influence of gas flow on melt convection and phase boundaries in FZ silicon single crystal growth by Sabanskis, A., Virbulis, J.

    Published in Journal of crystal growth (01-05-2015)
    “…Axisymmetric calculations of inert gas flow in a floating zone puller are carried out using an open source software package OpenFOAM. Transient axisymmetric…”
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    Journal Article
  4. 4

    Application of enthalpy model for floating zone silicon crystal growth by Krauze, A., Bergfelds, K., Virbulis, J.

    Published in Journal of crystal growth (15-09-2017)
    “…A 2D simplified crystal growth model based on the enthalpy method and coupled with a low-frequency harmonic electromagnetic model is developed to simulate the…”
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    Journal Article
  5. 5

    Mathematical modelling of the feed rod shape in floating zone silicon crystal growth by Plāte, M., Krauze, A., Virbulis, J.

    Published in Journal of crystal growth (01-01-2017)
    “…A three-dimensional (3D) transient multi-physical model of the feed rod melting in the floating zone (FZ) silicon single-crystal growth process is presented…”
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    Journal Article
  6. 6

    Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth by Lukanin, D.P., Kalaev, V.V., Makarov, Yu.N., Wetzel, T., Virbulis, J., von Ammon, W.

    Published in Journal of crystal growth (15-05-2004)
    “…We present an updated version of the combined 2D/3D model of heat transfer and turbulent melt convection for industrial Czochralski (CZ) crystal growth. The 3D…”
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    Journal Article Conference Proceeding
  7. 7

    The impact of nitrogen on the defect aggregation in silicon by von Ammon, W., Hölzl, R., Virbulis, J., Dornberger, E., Schmolke, R., Gräf, D.

    Published in Journal of crystal growth (01-06-2001)
    “…A nitrogen-doped floating zone (FZ) crystal with a linear increase of the axial nitrogen content from zero to more than 1×10 15 at/cm 3 was grown. It was found…”
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    Journal Article
  8. 8

    Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations by Kalaev, V.V., Lukanin, D.P., Zabelin, V.A., Makarov, Yu.N., Virbulis, J., Dornberger, E., Ammon, W.von

    Published in Journal of crystal growth (01-03-2003)
    “…We present 3D unsteady analysis of melt turbulent convection coupled with heat transfer in the crystal and crucible during 300 mm CZ Si crystal growth. The 3D…”
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    Journal Article
  9. 9

    Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fields by Virbulis, J, Wetzel, Th, Muiznieks, A, Hanna, B, Dornberger, E, Tomzig, E, Mühlbauer, A, Ammon, W.v

    Published in Journal of crystal growth (01-08-2001)
    “…Turbulent silicon melt flows are studied in large diameter Czochralski crucibles under the influence of alternating, steady and combined magnetic fields. The…”
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    Journal Article Conference Proceeding
  10. 10

    Modeling of transient point defect dynamics in Czochralski silicon crystals by Dornberger, E., von Ammon, W., Virbulis, J., Hanna, B., Sinno, T.

    Published in Journal of crystal growth (01-08-2001)
    “…Intrinsic point defects control the formation of grown-in defects in silicon crystals. Under steady state conditions, the type of the prevailing point defect…”
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    Journal Article Conference Proceeding
  11. 11

    Crystal growth melt flow control by means of magnetic fields by Galindo, V., Gerbeth, G., von Ammon, W., Tomzig, E., Virbulis, J.

    Published in Energy conversion and management (01-02-2002)
    “…Contactless melt flow control is important in many crystal growth technologies. Typically, steady magnetic fields are used to damp convective flow. On the…”
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    Journal Article Conference Proceeding
  12. 12

    Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals by Evstratov, I.Yu, Kalaev, V.V., Zhmakin, A.I., Makarov, Yu.N., Abramov, A.G., Ivanov, N.G., Smirnov, E.M., Dornberger, E., Virbulis, J., Tomzig, E., von Ammon, W.

    Published in Journal of crystal growth (01-08-2001)
    “…We describe a computational model based on Large Eddy Simulation to calculate 3D unsteady turbulent melt convection in Czochralski systems for Si-crystal…”
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    Journal Article
  13. 13

    Physical modelling of the melt flow during large-diameter silicon single crystal growth by Gorbunov, L., Pedchenko, A., Feodorov, A., Tomzig, E., Virbulis, J., Ammon, W.V.

    Published in Journal of crystal growth (01-09-2003)
    “…The reported investigations concern physical modelling of Czochralski growth of silicon large-diameter single crystals. InGaSn eutectic was used as a modelling…”
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    Journal Article
  14. 14

    Numerical 2D modelling of turbulent melt flow in CZ system with dynamic magnetic fields by Krauze, A., Muiznieks, A., Mühlbauer, A., Wetzel, Th, Gorbunov, L., Pedchenko, A., Virbulis, J.

    Published in Journal of crystal growth (15-05-2004)
    “…The paper presents results of 2D axisymmetric mathematical modelling of laboratory CZ model facility that corresponds well to a large industrial silicon CZ…”
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    Journal Article Conference Proceeding
  15. 15

    Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth by Wetzel, Th, Virbulis, J., Muiznieks, A., von Ammon, W., Tomzig, E., Raming, G., Weber, M.

    Published in Journal of crystal growth (15-05-2004)
    “…A model approach for a modification of the effective heat conductivity in the turbulent melt flow simulation for 28″ Si CZ crucibles is presented, which helped…”
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    Journal Article Conference Proceeding
  16. 16

    Analysis of magnetic field effect on 3D melt flow in CZ Si growth by Ivanov, N.G., Korsakov, A.B., Smirnov, E.M., Khodosevitch, K.V., Kalaev, V.V., Makarov, Yu.N., Dornberger, E., Virbulis, J., von Ammon, W.

    Published in Journal of crystal growth (01-03-2003)
    “…Three-dimensional turbulent melt convection in an industrial Czochralski Si-crystal growth system subjected to action of an axial stationary magnetic field is…”
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    Journal Article
  17. 17

    Numerical 3D modelling of turbulent melt flow in a large CZ system with horizontal DC magnetic field. II. Comparison with measurements by Krauze, A., Muižnieks, A., Mühlbauer, A., Wetzel, Th, Tomzig, E., Gorbunov, L., Pedchenko, A., Virbulis, J.

    Published in Journal of crystal growth (15-04-2004)
    “…This paper presents a comparison between numerically calculated and measured temperature distributions in turbulent flow in a laboratory model for a CZ large…”
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    Journal Article
  18. 18

    Numerical model of turbulent CZ melt flow in the presence of AC and CUSP magnetic fields and its verification in a laboratory facility by Wetzel, Th, Muiznieks, A., Mühlbauer, A., Gelfgat, Y., Gorbunov, L., Virbulis, J., Tomzig, E., Ammon, W.v.

    Published in Journal of crystal growth (01-08-2001)
    “…The paper describes a numerical simulation tool for heat and mass transfer processes in large diameter CZ crucibles under the influence of several non-rotating…”
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    Journal Article Conference Proceeding
  19. 19

    Analysis of the dopant segregation effects at the floating zone growth of large silicon crystals by Mühlbauer, A., Muiznieks, A., Virbulis, J.

    Published in Journal of crystal growth (01-10-1997)
    “…A computer simulation is carried out to study the dopant concentration fields in the molten zone and in the growing crystal for the floating zone (FZ) growth…”
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    Journal Article Conference Proceeding
  20. 20

    Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals—numerical model and qualitative considerations by Muižnieks, A., Raming, G., Mühlbauer, A., Virbulis, J., Hanna, B., Ammon, W.v.

    Published in Journal of crystal growth (01-08-2001)
    “…When growing silicon crystals with higher diameter (presently up to 300 mm) the thermal stresses and possible dislocation generation in single crystals become…”
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    Journal Article Conference Proceeding