Search Results - "Virbulis, J."
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1
3D modeling of doping from the atmosphere in floating zone silicon crystal growth
Published in Journal of crystal growth (01-01-2017)“…Three-dimensional numerical simulations of the inert gas flow, melt flow and dopant transport in both phases are carried out for silicon single crystal growth…”
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2
3D modeling of growth ridge and edge facet formation in 〈100〉 floating zone silicon crystal growth process
Published in Journal of crystal growth (15-08-2019)“…•Ridge growth on 4″ and 5″ Si crystals was modeled.•Characteristic ridge formation due to {111} facet development was observed.•Azimuthal widths of the…”
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3
Simulation of the influence of gas flow on melt convection and phase boundaries in FZ silicon single crystal growth
Published in Journal of crystal growth (01-05-2015)“…Axisymmetric calculations of inert gas flow in a floating zone puller are carried out using an open source software package OpenFOAM. Transient axisymmetric…”
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4
Application of enthalpy model for floating zone silicon crystal growth
Published in Journal of crystal growth (15-09-2017)“…A 2D simplified crystal growth model based on the enthalpy method and coupled with a low-frequency harmonic electromagnetic model is developed to simulate the…”
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5
Mathematical modelling of the feed rod shape in floating zone silicon crystal growth
Published in Journal of crystal growth (01-01-2017)“…A three-dimensional (3D) transient multi-physical model of the feed rod melting in the floating zone (FZ) silicon single-crystal growth process is presented…”
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6
Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth
Published in Journal of crystal growth (15-05-2004)“…We present an updated version of the combined 2D/3D model of heat transfer and turbulent melt convection for industrial Czochralski (CZ) crystal growth. The 3D…”
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Journal Article Conference Proceeding -
7
The impact of nitrogen on the defect aggregation in silicon
Published in Journal of crystal growth (01-06-2001)“…A nitrogen-doped floating zone (FZ) crystal with a linear increase of the axial nitrogen content from zero to more than 1×10 15 at/cm 3 was grown. It was found…”
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8
Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations
Published in Journal of crystal growth (01-03-2003)“…We present 3D unsteady analysis of melt turbulent convection coupled with heat transfer in the crystal and crucible during 300 mm CZ Si crystal growth. The 3D…”
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9
Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fields
Published in Journal of crystal growth (01-08-2001)“…Turbulent silicon melt flows are studied in large diameter Czochralski crucibles under the influence of alternating, steady and combined magnetic fields. The…”
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10
Modeling of transient point defect dynamics in Czochralski silicon crystals
Published in Journal of crystal growth (01-08-2001)“…Intrinsic point defects control the formation of grown-in defects in silicon crystals. Under steady state conditions, the type of the prevailing point defect…”
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11
Crystal growth melt flow control by means of magnetic fields
Published in Energy conversion and management (01-02-2002)“…Contactless melt flow control is important in many crystal growth technologies. Typically, steady magnetic fields are used to damp convective flow. On the…”
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12
Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals
Published in Journal of crystal growth (01-08-2001)“…We describe a computational model based on Large Eddy Simulation to calculate 3D unsteady turbulent melt convection in Czochralski systems for Si-crystal…”
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13
Physical modelling of the melt flow during large-diameter silicon single crystal growth
Published in Journal of crystal growth (01-09-2003)“…The reported investigations concern physical modelling of Czochralski growth of silicon large-diameter single crystals. InGaSn eutectic was used as a modelling…”
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14
Numerical 2D modelling of turbulent melt flow in CZ system with dynamic magnetic fields
Published in Journal of crystal growth (15-05-2004)“…The paper presents results of 2D axisymmetric mathematical modelling of laboratory CZ model facility that corresponds well to a large industrial silicon CZ…”
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Journal Article Conference Proceeding -
15
Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth
Published in Journal of crystal growth (15-05-2004)“…A model approach for a modification of the effective heat conductivity in the turbulent melt flow simulation for 28″ Si CZ crucibles is presented, which helped…”
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16
Analysis of magnetic field effect on 3D melt flow in CZ Si growth
Published in Journal of crystal growth (01-03-2003)“…Three-dimensional turbulent melt convection in an industrial Czochralski Si-crystal growth system subjected to action of an axial stationary magnetic field is…”
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17
Numerical 3D modelling of turbulent melt flow in a large CZ system with horizontal DC magnetic field. II. Comparison with measurements
Published in Journal of crystal growth (15-04-2004)“…This paper presents a comparison between numerically calculated and measured temperature distributions in turbulent flow in a laboratory model for a CZ large…”
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18
Numerical model of turbulent CZ melt flow in the presence of AC and CUSP magnetic fields and its verification in a laboratory facility
Published in Journal of crystal growth (01-08-2001)“…The paper describes a numerical simulation tool for heat and mass transfer processes in large diameter CZ crucibles under the influence of several non-rotating…”
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19
Analysis of the dopant segregation effects at the floating zone growth of large silicon crystals
Published in Journal of crystal growth (01-10-1997)“…A computer simulation is carried out to study the dopant concentration fields in the molten zone and in the growing crystal for the floating zone (FZ) growth…”
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20
Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals—numerical model and qualitative considerations
Published in Journal of crystal growth (01-08-2001)“…When growing silicon crystals with higher diameter (presently up to 300 mm) the thermal stresses and possible dislocation generation in single crystals become…”
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Journal Article Conference Proceeding