Influence of ion irradiation on internal residual stress in DLC films

Influence of ion irradiation on internal residual stress in DLC films

The dependence of internal residual stress in thin diamond-like carbon films grown on Si substrate by PECVD technique on most important growth parameters, namely RF-power, DC bias voltage and substrate temperature, is described. Results show that compressive stress reaches the highest value of 2.7 G...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 268; no. 19; pp. 3107 - 3110
Main Authors: Karaseov, Platon A., Podsvirov, Oleg A., Karabeshkin, Konstantin V., Vinogradov, Andrei Ya, Azarov, Alexander Yu, Karasev, Nikita N., Titov, Andrei I., Smirnov, Alexander S.
Format: Journal Article
Language:English
Published: Elsevier B.V 01-10-2010
Subjects:
Bias
Compressive properties
Diamond-like carbon
Diamond-like carbon films
Direct current
DLC
Electric potential
Ion irradiation
Mechanical stress
Residual stress
Silicon substrates
Stresses
Thin film
Diamond-like carbon
DLC
Ion irradiation
Mechanical stress
Thin film
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Summary:The dependence of internal residual stress in thin diamond-like carbon films grown on Si substrate by PECVD technique on most important growth parameters, namely RF-power, DC bias voltage and substrate temperature, is described. Results show that compressive stress reaches the highest value of 2.7 GPa at low RF-power and DC bias. Increase of substrate temperature from 250 to 350 °C leads to nonlinear increase of stress value. Inhomogeneity of residual stress along the film surface disappears when film is deposited at temperatures above 275 °C. Post-growth film irradiation by P + and In + ions cause decrease of compressive stress followed by its inversion to tensile. For all ion energy combinations used residual stress changes linearly with normalized fluence up to 0.2 DPA with slope (8.7 ± 1.3) GPa/DPA.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2010.05.063