Search Results - "Vinichenko, A. A."
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Contact Potential Difference in the Absence of a Current through a Sample in the Quantum Hall Effect Regime in InGaAs/InAlAs Heterostructure
Published in Physics of metals and metallography (01-02-2024)“…The paper presents experimental results of the appearance of a voltage at the potential contacts in the absence of an external current through a sample in the…”
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2
Treatment of pararectal fistulas in Crohn’s disease using laser technologies
Published in Vestnik hirurgii im. I.I. Grekova (01-04-2022)“…The OBJECTIVE of the study was to assess the possibility of using laser technologies in the treatment of perianal Crohn’s disease.METHODS AND MATERIALS. The…”
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Interdisciplinary approach and staged treatment of a patient with Crohn’s disease complicated by stricture of the ileum with penetration and the formation of enterovesical fistula
Published in Vestnik hirurgii im. I.I. Grekova (03-11-2021)“…An observation from practice was devoted to the experience of an interdisciplinary approach in the diagnosis and surgical treatment of a patient with…”
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4
Anomalous Photoresponse of Heavily Doped GaAs/AlAs Superlattices with Electric Domains
Published in Journal of communications technology & electronics (01-12-2021)“…— The strong effect of weak interband illumination on tunneling transport in doped GaAs/AlAs superlattices was found under conditions of electric domain…”
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Multivariate Genome-Wide Association Study of Concentrations of Seven Elements in Seeds Reveals Four New Loci in Russian Wheat Lines
Published in Plants (Basel) (22-08-2023)“…Wheat is a cereal grain that plays an important role in the world’s food industry. The identification of the loci that change the concentration of elements in…”
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Evaluation of the return of investments in transport route development
Published in SHS Web of Conferences (2021)“…The network of Russian railways provides the movement of goods and passengers both within the country and in the context of international transport, through…”
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Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping
Published in Semiconductors (Woodbury, N.Y.) (01-02-2018)“…The influence of the concentration of δ doping with Si on the electron transport properties of Al 0.25 Ga 0.75 As/In 0.2 Ga 0.8 As/GaAs pseudomorphic quantum…”
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Structural Properties of {LTG-GaAs/GaAs:Si} Superlattices on GaAs(100) and (111)A Substrates
Published in Nanotechnologies in Russia (01-12-2022)“…A new structure for photoconductive antennas is proposed, which represents a multilayer epitaxial film grown on a GaAs(111)A substrate and consisting of…”
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Studying a collection of common-wheat varieties for leaf rust resistance, crop yield and grain quality in the environmental conditions of Novosibirsk region
Published in Vavilovskiĭ zhurnal genetiki i selekt͡s︡ii (01-12-2023)“…The relationship between a variety's genotype, environmental conditions and phytopathogenic load are the key factors contributing to high yields that should be…”
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Electron-Quantum Transport in Pseudomorphic and Metamorphic In0.2Ga0.8As-Based Quantum Wells
Published in Semiconductors (Woodbury, N.Y.) (01-03-2019)“…Metamorphic high-electron-mobility transistor (HEMT) structures based on deep In 0.2 Ga 0.8 As/In 0.2 Al 0.8 As quantum wells (0.7 eV for Γ electrons) with…”
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THz Radiation of Photoconductive Antennas based on {LT-GaAa/GaAa:Si} Superlattice Structures
Published in Optics and spectroscopy (01-07-2020)“…A material in the form of a multilayer structure based on low-temperature LT-GaAs grown on (111)A-oriented substrates is proposed for fabrication of THz…”
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3.3 THz Quantum Cascade Laser Based on a Three GaAs/AlGaAs Quantum-Well Active Module with an Operating Temperature above 120 K
Published in Semiconductors (Woodbury, N.Y.) (01-02-2022)“…— The design of a terahertz (THz) quantum cascade laser (QCL) with an active module based on three GaAs/Al 0.18 Ga 0.82 As quantum wells for high-temperature…”
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Electron Effective Mass and Momentum Relaxation Time in One-Sided δ-Doped PHEMT AlGaAs/InGaAs/GaAs Quantum Wells with High Electron Density
Published in Technical physics letters (01-12-2018)“…Using the Shubnikov–de Haas effect, the dependences of electron effective mass m * and transport and quantum momentum relaxation times in Al 0.25 Ga 0.75 As/In…”
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14
Analysis of the Legislation of the EEU Countries in the Field of Combating Cybercrime
Published in Evrazijskaâ integraciâ: èkonomika, pravo, politika (01-11-2024)“…The article presents an analysis of cybersecurity legislation in the member countries of the Eurasian Economic Union (EAEU), focusing on Russia, Kazakhstan,…”
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Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates
Published in Crystallography reports (01-05-2020)“…The structural characteristics of {InGaAs/InAlAs} superlattices, grown by molecular-beam epitaxy (MBE) at a temperature of 200°C on InP substrates with the…”
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Peculiarities of Silicon-Donor Ionization and Electron Scattering in Pseudomorphous AlGaAs/InGaAs/GaAs Quantum Wells with Heavy Unilateral Delta-Doping
Published in Technical physics letters (01-02-2018)“…The influence of the concentration of silicon donors on the electron-transport properties of pseudomorphous Al 0.25 Ga 0.75 As/In 0.2 Ga 0.8 As/GaAs quantum…”
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New Structure for Photoconductive Antennas Based on {LTG-GaAs/GaAs:Si} Superlattice on GaAs(111)A Substrate
Published in Crystallography reports (01-03-2019)“…The structural characteristics of a new structure for photoconductive antennas have been investigated. This structure is a multilayered epitaxial film grown on…”
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18
Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures
Published in Semiconductors (Woodbury, N.Y.) (01-12-2018)“…The longitudinal ρ xx and Hall ρ xy resistances were measured in the region of the quantum phase transitions for the quantum Hall effect regime with magnetic…”
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Transport in Short-Period GaAs/AlAs Superlattices with Electric Domains
Published in Semiconductors (Woodbury, N.Y.) (01-04-2018)“…Electronic transport in short-period GaAs/AlAs superlattices with resonant cavities was studied at room temperature. The evolution of tunneling current at…”
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Journal Article -
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Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures
Published in Semiconductors (Woodbury, N.Y.) (01-12-2018)“…The name of the third author should read E. V. Ilchenko…”
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