Search Results - "Vinh, N Q"

Dielectric Spectroscopy of Proteins as a Quantitative Experimental Test of Computational Models of Their Low-Frequency Harmonic Motions by Vinh, N. Q, Allen, S. James, Plaxco, Kevin W

“…Decades of molecular dynamics and normal mode calculations suggest that the largest-scale collective vibrational modes of proteins span the picosecond to…”
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Coherent control of Rydberg states in silicon by van der Meer, A. F. G, Murdin, B. N, Lynch, S. A, Pidgeon, C. R, Vinh, N. Q, Aeppli, G, Greenland, P. T, Redlich, B

“…Laser cooling and electromagnetic traps have led to a revolution in atomic physics, yielding dramatic discoveries ranging from Bose-Einstein condensation to…”
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Inducing an incipient terahertz finite plasmonic crystal in coupled two dimensional plasmonic cavities by Dyer, G C, Aizin, G R, Preu, S, Vinh, N Q, Allen, S J, Reno, J L, Shaner, E A

“…We measured a change in the current transport of an antenna-coupled, multigate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves…”
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Excitation mechanisms of Er optical centers in GaN epilayers by George, D. K., Hawkins, M. D., McLaren, M., Jiang, H. X., Lin, J. Y., Zavada, J. M., Vinh, N. Q.

“…We report direct evidence of two mechanisms responsible for the excitation of optically active Er3+ ions in GaN epilayers grown by metal-organic chemical vapor…”
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Photoluminescence quantum efficiency of Er optical centers in GaN epilayers by Ho, V. X., Dao, T. V., Jiang, H. X., Lin, J. Y., Zavada, J. M., McGill, S. A., Vinh, N. Q.

“…We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by…”
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Silicon as a model ion trap: Time domain measurements of donor Rydberg states by Vinh, N.Q, Greenland, P.T, Litvinenko, K, Redlich, B, van der Meer, A.F.G, Lynch, S.A, Warner, M, Stoneham, A.M, Aeppli, G, Paul, D.J, Pidgeon, C.R, Murdin, B.N

“…One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to…”
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Time-Resolved Dynamics of Shallow Acceptor Transitions in Silicon by Vinh, N. Q., Redlich, B., van der Meer, A. F. G., Pidgeon, C. R., Greenland, P. T., Lynch, S. A., Aeppli, G., Murdin, B. N.

“…Shallow group-V donors in silicon may be thought of as hydrogenlike, and shallow acceptors are similarly described by effective-mass theory with similar energy…”
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New terahertz dielectric spectroscopy for the study of aqueous solutions by George, Deepu K, Charkhesht, Ali, Vinh, N Q

“…We present the development of a high precision, tunable far-infrared (terahertz) frequency-domain dielectric spectrometer for studying the dynamics of…”
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Microscopic structure of Er-related optically active centers in crystalline silicon by Vinh, N Q, Przybylińska, H, Krasil'nik, Z F, Gregorkiewicz, T

“…A successful observation and analysis of the Zeeman effect on the lambda approximately 1.54 microm photoluminescence band in Er-doped crystalline MBE-grown…”
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Room-Temperature Lasing Action in GaN Quantum Wells in the Infrared 1.5 μm Region by Ho, V. X, Al tahtamouni, T. M, Jiang, H. X, Lin, J. Y, Zavada, J. M, Vinh, N. Q

“…Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary…”
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Enhanced performance of resonant sub-terahertz detection in a plasmonic cavity by Dyer, G. C., Preu, S., Aizin, G. R., Mikalopas, J., Grine, A. D., Reno, J. L., Hensley, J. M., Vinh, N. Q., Gossard, A. C., Sherwin, M. S., Allen, S. J., Shaner, E. A.

“…A multi-gate high electron mobility transistor coupled to a log-periodic antenna was engineered to detect sub-terahertz radiation through resonant excitation…”
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A terahertz plasmon cavity detector by Dyer, G. C., Vinh, N. Q., Allen, S. J., Aizin, G. R., Mikalopas, J., Reno, J. L., Shaner, E. A.

“…Sensitivity of a plasmonic detector is enhanced by integrating a broadband log-periodic antenna with a two-dimensional plasma cavity that is defined by source,…”
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Time-resolved free-electron laser spectroscopy of a copper isoelectronic center in silicon by VINH, N. Q, PHILLIPS, J, DAVIES, Gordon, GREGORKIEWICZ, T

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Perspective for using Nd–Fe–B magnets as a tool for the improvement of the production and transportation of Vietnamese crude oil with high paraffin content by Tung, N.P, Vinh, N.Q, Phong, N.T.P, Long, B.Q.K, Hung, P.V

“…Controlling the paraffin deposition is one of the most serious and costly problems for high-paraffin crude-oil production and transportation. This holds…”
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Donor-state-enabling Er-related luminescence in silicon: direct identification and resonant excitation by Izeddin, I, Klik, M A J, Vinh, N Q, Bresler, M S, Gregorkiewicz, T

“…We conclusively establish a direct link between formation of an Er-related donor gap state and the 1.5 microm emission of Er in Si. The experiment is performed…”
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Continuous voltage tunability of intersubband relaxation times in coupled SiGe quantum well structures using ultrafast spectroscopy by Rauter, P, Fromherz, T, Vinh, N Q, Murdin, B N, Mussler, G, Grützmacher, D, Bauer, G

“…We demonstrate continuous voltage control of the nonradiative transition lifetime in semiconductor heterostructures. The results were obtained by picosecond…”
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Spectroscopic characterization of Er-1 center in selectively doped silicon by Vinh, N.Q., Klik, M., Andreev, B.A., Gregorkiewicz, T.

“…We report on investigation of Er-related optically excited emission from selectively doped Si/Si:Er nanolayer structures grown by sublimation MBE method…”
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Pump-probe investigations of THz transitions in Si/Si:Er nanolayers by Minissale, S, Vinh, N Q, Gregorkiewicz, T

“…A possibility to realize optical transitions within the 4I15/2 ground state of Er3+ ion in Si, between levels split by crystal-field, has been investigated by…”
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Strange lifetimes of the vibrations of interstitial oxygen in SiGe alloys by Kohli, K.K., Vinh, N.Q., Clauws, P., Davies, G.

“…The transient-bleaching decay time of the ν3 (1136cm−1) band of oxygen in Si1−xGex alloys, at low temperatures, is found to increase rapidly from a few tens of…”
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Free-electron laser studies of energy transfer mechanisms in semiconductors doped with transition series ions by Forcales, M., Klik, M., Vinh, N.Q., Bradley, I.V., Wells, J-P.R., Gregorkiewicz, T.

“…Shallow levels determine electrical and optical properties of semiconductors. Mid-infrared radiation from a free-electron laser can be used for an effective…”
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