Search Results - "Vinet, M"

A CMOS silicon spin qubit by Maurand, R., Jehl, X., Kotekar-Patil, D., Corna, A., Bohuslavskyi, H., Laviéville, R., Hutin, L., Barraud, S., Vinet, M., Sanquer, M., De Franceschi, S.

“…Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its…”
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Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon by Crippa, A., Ezzouch, R., Aprá, A., Amisse, A., Laviéville, R., Hutin, L., Bertrand, B., Vinet, M., Urdampilleta, M., Meunier, T., Sanquer, M., Jehl, X., Maurand, R., De Franceschi, S.

“…Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes…”
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Fast Gate-Based Readout of Silicon Quantum Dots Using Josephson Parametric Amplification by Schaal, S, Ahmed, I, Haigh, J A, Hutin, L, Bertrand, B, Barraud, S, Vinet, M, Lee, C-M, Stelmashenko, N, Robinson, J W A, Qiu, J Y, Hacohen-Gourgy, S, Siddiqi, I, Gonzalez-Zalba, M F, Morton, J J L

“…Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers a compact and scalable…”
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Electrical Control of g‑Factor in a Few-Hole Silicon Nanowire MOSFET by Voisin, B, Maurand, R, Barraud, S, Vinet, M, Jehl, X, Sanquer, M, Renard, J, De Franceschi, S

“…Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence,…”
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Dispersively Detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor by Betz, A. C, Wacquez, R, Vinet, M, Jehl, X, Saraiva, A. L, Sanquer, M, Ferguson, A. J, Gonzalez-Zalba, M. F

“…We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two…”
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Single-donor ionization energies in a nanoscale CMOS channel by Sanquer, M, Pierre, M, Wacquez, R, Jehl, X, Vinet, M, Cueto, O

“…One consequence of the continued downward scaling of transistors is the reliance on only a few discrete atoms to dope the channel, and random fluctuations in…”
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Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 K by Triantopoulos, K., Casse, M., Barraud, S., Haendler, S., Vincent, E., Vinet, M., Gaillard, F., Ghibaudo, G.

“…Self-heating in fully depleted silicon-on-insulator (FDSOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is experimentally studied using the…”
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A single hole spin with enhanced coherence in natural silicon by Piot, N., Brun, B., Schmitt, V., Zihlmann, S., Michal, V. P., Apra, A., Abadillo-Uriel, J. C., Jehl, X., Bertrand, B., Niebojewski, H., Hutin, L., Vinet, M., Urdampilleta, M., Meunier, T., Niquet, Y.-M., Maurand, R., Franceschi, S. De

“…Semiconductor spin qubits based on spin–orbit states are responsive to electric field excitations, allowing for practical, fast and potentially scalable qubit…”
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Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening by Bohuslavskyi, H., Jansen, A. G. M., Barraud, S., Barral, V., Casse, M., Le Guevel, L., Jehl, X., Hutin, L., Bertrand, B., Billiot, G., Pillonnet, G., Arnaud, F., Galy, P., De Franceschi, S., Vinet, M., Sanquer, M.

“…In the standard MOSFET description of the drain current <inline-formula> <tex-math notation="LaTeX"> {I}_{{D}} </tex-math></inline-formula> as a function of…”
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Coherent coupling of two dopants in a silicon nanowire probed by Landau-Zener-Stückelberg interferometry by Dupont-Ferrier, E, Roche, B, Voisin, B, Jehl, X, Wacquez, R, Vinet, M, Sanquer, M, De Franceschi, S

“…We report on microwave-driven coherent electron transfer between two coupled donors embedded in a silicon nanowire. By increasing the microwave frequency we…”
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Fast High-Fidelity Single-Shot Readout of Spins in Silicon Using a Single-Electron Box by Oakes, G. A., Ciriano-Tejel, V. N., Wise, D. F., Fogarty, M. A., Lundberg, T., Lainé, C., Schaal, S., Martins, F., Ibberson, D. J., Hutin, L., Bertrand, B., Stelmashenko, N., Robinson, J. W. A., Ibberson, L., Hashim, A., Siddiqi, I., Lee, A., Vinet, M., Smith, C. G., Morton, J. J. L., Gonzalez-Zalba, M. F.

“…Three key metrics for readout systems in quantum processors are measurement speed, fidelity, and footprint. Fast high-fidelity readout enables midcircuit…”
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A two-atom electron pump by Roche, B., Riwar, R.-P., Voisin, B., Dupont-Ferrier, E., Wacquez, R., Vinet, M., Sanquer, M., Splettstoesser, J., Jehl, X.

“…With the development of single-atom transistors, consisting of single dopants, nanofabrication has reached an extreme level of miniaturization. Promising…”
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Radio-frequency dispersive detection of donor atoms in a field-effect transistor by Verduijn, J, Vinet, M, Rogge, S

“…Radio-frequency dispersive read-out can provide a useful probe to nano-scale structures, such as nano-wire devices, especially, when the implementation of…”
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Reconfigurable quadruple quantum dots in a silicon nanowire transistor by Betz, A. C., Tagliaferri, M. L. V., Vinet, M., Broström, M., Sanquer, M., Ferguson, A. J., Gonzalez-Zalba, M. F.

“…We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an…”
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A Review of Low Temperature Process Modules Leading Up to the First (≤500 °C) Planar FDSOI CMOS Devices for 3-D Sequential Integration by Fenouillet-Beranger, C., Brunet, L., Batude, P., Brevard, L., Garros, X., Casse, M., Lacord, J., Sklenard, B., Acosta-Alba, P., Kerdiles, S., Tavernier, A., Vizioz, C., Besson, P., Gassilloud, R., Pedini, J.-M., Kanyandekwe, J., Mazen, F., Magalhaes-Lucas, A., Cavalcante, C., Bosch, D., Ribotta, M., Lapras, V., Vinet, M., Andrieu, F., Arcamone, J.

“…In this article a review of low temperature (LT) (≤500 °C) process modules in view of 3-D sequential integration is presented. First, both the bottom device…”
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Experimental Demonstration of Ω-Gate SOI Nanowire MOS Transistors' Mobility Variation Induced by Substrate Bias by Bergamaschi, F. E., Ribeiro, T. A., Paz, B. C., de Souza, M., Barraud, S., Casse, M., Vinet, M., Faynot, O., Pavanello, M. A.

“…This work investigates the carrier mobility variation in <inline-formula> <tex-math notation="LaTeX">\Omega </tex-math></inline-formula>-gate…”
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Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance by Casse, M., Paz, B. Cardoso, Ghibaudo, G., Poiroux, T., Barraud, S., Vinet, M., de Franceschi, S., Meunier, T., Gaillard, F.

“…In this article, we have studied the drain current and transconductance of nMOS fully depleted silicon-on-insulator (FDSOI) transistors operating at low…”
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Scaling silicon-based quantum computing using CMOS technology by Gonzalez-Zalba, M. F., de Franceschi, S., Charbon, E., Meunier, T., Vinet, M., Dzurak, A. S.

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Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction by Bohuslavskyi, H., Kotekar-Patil, D., Maurand, R., Corna, A., Barraud, S., Bourdet, L., Hutin, L., Niquet, Y.-M., Jehl, X., De Franceschi, S., Vinet, M., Sanquer, M.

“…We report on the hole compact double quantum dots fabricated using a conventional CMOS technology. We provide the evidence of Pauli spin blockade in the few…”
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Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization by Bohuslavskyi, H., Barraud, S., Barral, V., Casse, M., Le Guevel, L., Hutin, L., Bertrand, B., Crippa, A., Jehl, X., Pillonnet, G., Jansen, A. G. M., Arnaud, F., Galy, P., Maurand, R., De Franceschi, S., Sanquer, M., Vinet, M.

“…Extensive electrical characterization of ring oscillators (ROs) made in high-<inline-formula> <tex-math notation="LaTeX">{k} </tex-math></inline-formula> metal…”
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