Characterization of ion-implanted silicon-insulator interfaces by reflected optical second harmonic generation

Optical second harmonic generation has been applied for the study of the ion-implanted SiO 2 Sib(1 1 1) interface and Si(1 1 1) surfaces. Experimental results of real-time measurements of the second harmonic generation signal during thermal oxide etching are presented and analyzed taking into consid...

Full description

Saved in:

Bibliographic Details
Published in:	Journal of non-crystalline solids Vol. 187; pp. 227 - 231
Main Authors:	Kravetsky, I.V., Kulyuk, L.L., Micu, A.V., Tsytsanu, V.I., Vieru, I.S.
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Amsterdam Elsevier B.V 01-07-1995 Elsevier
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Frequency conversion ; harmonic generation, including high-order harmonic generation Fundamental areas of phenomenology (including applications) Harmonic generation, frequency conversion Nonlinear optics Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Optical properties of specific thin films, surfaces, and low-dimensional structures Optics Physics Solid surfaces and solid-solid interfaces Surface structure and topography Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Interface structure Second harmonic generation Ion implantation Inorganic compounds Silicon oxides Silicon Experimental study
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	Optical second harmonic generation has been applied for the study of the ion-implanted SiO 2 Sib(1 1 1) interface and Si(1 1 1) surfaces. Experimental results of real-time measurements of the second harmonic generation signal during thermal oxide etching are presented and analyzed taking into consideration various contributions to the non-linear-optical response from oxide/silicon interface such as the silicon substrate, the static electric field, the inhomogeneous deformation and the crystalline oxide interlayer. The symmetry properties of the thermal oxide/Si(1 1 1) interface have also been studied by measuring the rotational dependences of the second harmonic generation signal before and after oxide etching. It is shown that second harmonic rotational anisotropy and intensity strongly depend on the disordering of the interface and surface induced by ion implantation.
ISSN:	0022-3093 1873-4812
DOI:	10.1016/0022-3093(95)00215-4