Search Results - "Via, G. D."

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges by Killat, N., Montes Bajo, M., Paskova, T., Evans, K. R., Leach, J., Li, X., Özgür, Ü., Morkoç, H., Chabak, K. D., Crespo, A., Gillespie, J. K., Fitch, R., Kossler, M., Walker, D. E., Trejo, M., Via, G. D., Blevins, J. D., Kuball, M.

“…To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN…”
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Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors by Douglas, E.A., Chang, C.Y., Gila, B.P., Holzworth, M.R., Jones, K.S., Liu, L., Kim, Jinhyung, Jang, Soohwan, Via, G.D., Ren, F., Pearton, S.J.

“…► AlGaN/GaN HEMTs exhibit a negative temperature dependence for V CRI. ► Breakdown at V CRI does not occur immediately with applied bias. ► DC stress results…”
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AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress by Douglas, E.A., Chang, C.Y., Cheney, D.J., Gila, B.P., Lo, C.F., Lu, Liu, Holzworth, R., Whiting, P., Jones, K., Via, G.D., Kim, Jinhyung, Jang, Soohwan, Ren, Fan, Pearton, S.J.

“…AlGaN/GaN High Electron Mobility Transistors (HEMTs) with various gate lengths have been step-stressed under both on- and off-state conditions. On-state, high…”
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RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz by Jessen, G.H., Gillespie, J.K., Via, G.D., Crespo, A., Langley, D., Aumer, M.E., Ward, C.S., Henry, H.G., Thomson, D.B., Partlow, D.P.

“…Unstrained high-electron mobility transistors (HEMTs) were fabricated from InAlN/GaN on semi-insulating SiC substrates. The devices had 0.24-mum T-gates with a…”
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High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier by Crespo, A., Bellot, M.M., Chabak, K.D., Gillespie, J.K., Jessen, G.H., Miller, V., Trejo, M., Via, G.D., Walker, D.E., Winningham, B.W., Smith, H.E., Cooper, T.A., Gao, X., Guo, S.

“…We report the first CW Ka-band radio-frequency (RF) power measurements at 35 GHz from a passivated Al 0.82 In 0.18 N/GaN high-electron mobility transistor on…”
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Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates by Killat, N., Montes, M., Pomeroy, J. W., Paskova, T., Evans, K. R., Leach, J., Li, X., Ozgur, U., Morkoc, H., Chabak, K. D., Crespo, A., Gillespie, J. K., Fitch, R., Kossler, M., Walker, D. E., Trejo, M., Via, G. D., Blevins, J. D., Kuball, M.

“…Micro-Raman thermography, microphotoluminescence spectroscopy, and thermal simulation were used to study the thermal properties of AlGaN/GaN heterostructure…”
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Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs by Gillespie, J.K., Fitch, R.C., Sewell, J., Dettmer, R., Via, G.D., Crespo, A., Jenkins, T.J., Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J.

“…The low temperature (100/spl deg/C) deposition of Sc 2 O 3 or MgO layers is found to significantly increase the output power of AlGaN/GaN HEMTs. At 4 GHz,…”
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Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates by Tapajna, M., Killat, N., Moereke, J., Paskova, T., Evans, K. R., Leach, J., Li, X., Ozgur, Ü, Morkoc, H., Chabak, K. D., Crespo, A., Gillespie, J. K., Fitch, R., Kossler, M., Walker, D. E., Trejo, M., Via, G. D., Blevins, J. D., Kuball, M.

“…The reliability of AlGaN/GaN HEMTs processed on bulk GaN substrates was studied using electrical and optical methods, showing a decreasing degradation with…”
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High performance 0.14 μm gate-length AlGaN/GaN power HEMTs on SiC by Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Sewell, J.S., Dettmer, R.W., Jenkins, T.J., Davis, R.F., Yang, J., Khan, M.A., Binari, S.C.

“…High electron mobility transistors (HEMTs) were fabricated from AlGaN/GaN on semi-insulating SiC substrates with excellent performance and high yield. The…”
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Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy by Jessen, G.H, White, B.D, Bradley, S.T, Smith, P.E, Brillson, L.J, Van Nostrand, J.E, Fitch, R, Via, G.D, Gillespie, J.K, Dettmer, R.W, Sewell, J.S

“…Low energy electron-excited nano-luminescence (LEEN) spectroscopy has been used to correlate higher intensities of deep level emissions with higher ohmic…”
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Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors by Luo, B., Kim, Jihyun, Ren, F., Gillespie, J. K., Fitch, R. C., Sewell, J., Dettmer, R., Via, G. D., Crespo, A., Jenkins, T. J., Gila, B. P., Onstine, A. H., Allums, K. K., Abernathy, C. R., Pearton, S. J., Dwivedi, R., Fogarty, T. N., Wilkins, R.

“…Sc 2 O 3 -passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons to a fluence corresponding to approximately 10…”
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Degradation of sub-micron gate AlGaN/GaN HEMTs due to reverse gate bias by Douglas, E A, Chih-Yang Chang, Anderson, T, Hite, J, Liu Lu, Chien-Fong Lo, Byung-Hwan Chu, Cheney, D J, Gila, B P, Ren, F, Via, G D, Whiting, P, Holzworth, R, Jones, K S, Soohwan Jang, Pearton, S J

“…GaN High Electron mobility transistors (HEMTs) were electrically step-stressed under high reverse gate bias conditions. Once a threshold voltage is reached,…”
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Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors by Moser, N. A., Gillespie, J. K., Via, G. D., Crespo, A., Yannuzzi, M. J., Jessen, G. H., Fitch, R. C., Luo, B., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J.

“…Interdevice isolation currents in mesa-isolated AlGaN/GaN high-electron-mobility transistors are found to exhibit thermally activated behavior, with an…”
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Effects of deep-level defects on ohmic contact and frequency performance of AlGaN/GaN high-electron-mobility transistors by Jessen, G. H., Fitch, R. C., Gillespie, J. K., Via, G. D., White, B. D., Bradley, S. T., Walker, D. E., Brillson, L. J.

“…We have characterized AlGaN/GaN high-electron-mobility-transistors on sapphire and silicon carbide substrates with electrical and microcathodoluminescence…”
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Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors by Luo, B., Ren, F., Allums, K.K., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Dwivedi, R., Fogarty, T.N., Wilkins, R., Fitch, R.C., Gillespie, J.K., Jenkins, T.J., Dettmer, R., Sewell, J., Via, G.D., Crespo, A., Baca, A.G., Shul, R.J.

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Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors by Arehart, A.R., Sasikumar, A., Rajan, S., Via, G.D., Poling, B., Winningham, B., Heller, E.R., Brown, D., Pei, Y., Recht, F., Mishra, U.K., Ringel, S.A.

“…► EC−0.57eV deep level observed in all MOCVD-grown GaN HEMTs. ► EC−0.57eV level increases ∼5× with high temperature RF stressing. ► Pulsed I–V exhibit…”
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Prospects for Gallium Nitride-on-Diamond Transistors by Blevins, J. D., Via, G. D.

“…Strategies aimed at improving the near junction heat removal of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are presently limiting GaN…”
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Simplified ohmic and Schottky contact formation for field effect transistors using the single layer integrated metal field effect transistor (SLIMFET) process by DeSalvo, G.C., Quach, T.K., Bozada, C.A., Dettmer, R.W., Nakano, K., Gillespie, J.K., Via, G.D., Ebel, J.L., Havasy, C.K.

“…A new III-V semiconductor device fabrication process for GaAs-based field effect transistors (FET) is presented which uses a single lithographic process and…”
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Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation by Poling, B.S., Via, G.D., Bole, K.D., Johnson, E.E., McDermott, J.M.

“…The reliability of commercial-off-the-shelf (COTS) GaN HEMTs was studied after irradiation using heavy ions of Neon (Ne), Silicon (Si), and Argon (Ar). Devices…”
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Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation by Luo, B., Mehandru, R., Kim, Jihyun, Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R.C., Moser, N., Gillespie, J.K., Jessen, G.H., Jenkins, T.J., Yannuzi, M.J., Via, G.D., Crespo, A.

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