Search Results - "Vetury, R"

The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs by Vetury, R., Zhang, N.Q., Keller, S., Mishra, U.K.

“…GaN based HFETs are of tremendous interest in applications requiring high power at microwave frequencies. Although excellent current-voltage (I-V)…”
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Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs by Trew, R.J., Yueying Liu, Bilbro, L., Weiwei Kuang, Vetury, R., Shealy, J.B.

“…Wide bandgap semiconductors are used to fabricate field-effect transistors with significantly improved RF output power compared to GaAs- and InP-based devices…”
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Anisotropic epitaxial lateral growth in GaN selective area epitaxy by Kapolnek, D., Keller, S., Vetury, R., Underwood, R. D., Kozodoy, P., Den Baars, S. P., Mishra, U. K.

“…Epitaxial lateral mask overgrowth which occurs during GaN selective epitaxy has been studied using linear mask features. The lateral growth varies between its…”
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Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability by Green, D.S., Gibb, S.R., Hosse, B., Vetury, R., Grider, D.E., Smart, J.A.

“…High-quality GaN epitaxy continues to be challenged by the lack of matched substrates. Threading dislocations that result from heteroepitaxy are responsible…”
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Current instabilities in GaN-based devices by Daumiller, I., Theron, D., Gaquiere, C., Vescan, A., Dietrich, R., Wieszt, A., Leier, H., Vetury, R., Mishra, U.K., Smorchkova, I.P., Keller, S., Nguyen, C., Kohn, E.

“…Current dispersion effects have been experimentally investigated in a variety of AlGaN/GaN heterostructure FETs with large signal and switching measurements…”
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X-band Bulk Acoustic Wave Resonator (XBAW) using Periodically Polarized Piezoelectric Films (P3F) by Kochhar, A., Vetury, R., Leathersich, J., Schaffer, Z., Moe, C., Kim, D., Cheema, K., Winters, M., Shealy, J.

“…This paper demonstrates the scaling of bulk acoustic wave (BAW) resonator to create micro-acoustic RF filtering solutions in the 8 - 12 GHz range for X band…”
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100 W GaN HEMT power amplifier module with > 60% efficiency over 100-1000 MHz bandwidth by Krishnamurthy, K, Driver, T, Vetury, R, Martin, J

“…We have demonstrated a decade bandwidth 100 W GaN HEMT power amplifier module with 15.5-18.6 dB gain, 104-121 W CW output power and 61.4-76.6 % drain…”
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A 0.1-1.8 GHz, 100 W GaN HEMT Power Amplifier Module by Krishnamurthy, K, Lieu, D, Vetury, R, Martin, J

“…We have demonstrated a 0.1-1.8 GHz, 100 W GaN HEMT power amplifier module with 11 dB gain, 94-142 W CW output power and 40.6-74.0% drain efficiency over the…”
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Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors by Keller, S., Vetury, R., Parish, G., DenBaars, S. P., Mishra, U. K.

“…The effect of the growth conditions of the top 2.5 nm thick AlGaN cap layer and wafer cool down conditions on AlGaN/GaN high electron mobility transistor…”
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452 MHz Bandwidth, High Rejection 5.6 GHz UNII XBAW Coexistence Filters Using Doped AlN-on-Silicon by Shen, Y., Patel, P., Vetury, R., Shealy, J.B.

“…5.66 GHz bulk acoustic wave filters, utilizing doped aluminum nitride (AlN), are reported. The filters exhibit high -3 dB bandwidth of 452 MHz (8% fractional…”
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High Power, High Efficiency, AlGaN/GaN HEMT Technology for Wireless Base Station Applications by Vetury, R., Wei, Y., Green, D.S., Gibb, S.R., Mercier, T.W., Leverich, K., Garber, P.M., Poulton, M.J., Shealy, J.B.

“…We report AlGaN/GaN high-electron-mobility-transistors (HEMT) on SiC substrates with field modulation plates (FP) of various dimensions and different gate…”
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Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features by Sukwon Choi, Heller, E. R., Dorsey, D., Vetury, R., Graham, S.

“…In this paper, we utilize micro-Raman spectroscopy to measure temperature and stress in state-of-the-art AlGaN/GaN HEMTs. A rigorous discussion on the physical…”
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The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTs by Sukwon Choi, Heller, E. R., Dorsey, D., Vetury, R., Graham, S.

“…The thermal response of AlGaN/GaN high electron mobility transistors directly correlates with the overall performance and reliability of these devices. In…”
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Performance and RF Reliability of GaN-on-SiC HEMT's using Dual-Gate Architectures by Vetury, R., Shealy, J.B., Green, D.S., McKenna, J., Brown, J.D., Gibb, S.R., Leverich, K., Garber, P.M., Poulton, M.J.

“…AlGaN/GaN HEMTs on SiC have been fabricated with dual and single gate device geometries. Subthreshold characteristics and drain bias dependence of large signal…”
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Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters by Heller, E R, Vetury, R, Green, D S

“…We present a physics-based finite-element model of operation of an AlGaN/GaN HEMT with device geometry inputs taken from transmission electron microscope cross…”
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100 W GaN HEMT power amplifier module with 60% efficiency over 100-1000 MHz bandwidth by Krishnamurthy, K., Driver, T., Vetury, R., Martin, J.

“…We have demonstrated a decade bandwidth 100 W GaN HEMT power amplifier module with 15.5-18.6 dB gain, 104-121 W CW output power and 61.4-76.6 % drain…”
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0.5-2.5 GHz, 10W MMIC Power Amplifier in GaN HEMT Technology by Krishnamurthy, K., Green, D., Vetury, R., Poulton, M., Martin, J.

“…We report a broadband lossy matched GaN on SiC HEMT power amplifier MMIC with 15 dB gain, 0.5-2.5 GHz bandwidth, 9-13.6 W CW output power and 44.9-63.6% drain…”
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Fundamental failure mechanisms limiting maximum voltage operation in AlGaN/GaN HEMTs by Hodge, M. D., Vetury, R., Shealy, J. B.

“…The authors report on the fundamental failure mechanisms limiting maximum applied voltage in AlGaN/GaN HEMTs. Device failure in high voltage off state…”
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Reliability assessment of AlGaN/GaN HEMT technology on SiC for 48V applications by Sangmin Lee, Vetury, R., Brown, J.D., Gibb, S.R., Cai, W.Z., Jinming Sun, Green, D.S., Shealy, J.

“…We present wearout reliability assessment of GaN HEMTs fabricated on SiC. Based on 3 temperature 48 V dc stress tests and using a failure criterion of 10%…”
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Periodically Poled Aluminum Scandium Nitride Bulk Acoustic Wave Resonators and Filters for Communications in the 6G Era by Izhar, Fiagbenu, M. M. A, Yao, S, Du, X, Musavigharavi, P, Deng, Y, Leathersich, J, Moe, C, Kochhar, A, Stach, E. A, Vetury, R, OlssonIII, R. H

“…Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G…”
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