Search Results - "Vescan, A."

Chemical Vapor Deposition of Organic-Inorganic Bismuth-Based Perovskite Films for Solar Cell Application by Sanders, S., Stümmler, D., Pfeiffer, P., Ackermann, N., Simkus, G., Heuken, M., Baumann, P. K., Vescan, A., Kalisch, H.

“…Perovskite solar cells have shown a rapid increase of performance and overcome the threshold of 20% power conversion efficiency (PCE). The main issues…”
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Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si Buffers by Yacoub, H., Mauder, C., Leone, S., Eickelkamp, M., Fahle, D., Heuken, M., Kalisch, H., Vescan, A.

“…The effect of different carbon doping techniques on the dynamic behavior of GaN-on-Si buffer was investigated. Intentional doping using a hydrocarbon precursor…”
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Showerhead-assisted chemical vapor deposition of CsPbBr3 films for LED applications by Sanders, S., Simkus, G., Riedel, J., Ost, A., Schmitz, A., Muckel, F., Bacher, G., Heuken, M., Vescan, A., Kalisch, H.

“…CsPbBr 3 represents a highly attractive material for perovskite light-emitting diodes (PeLEDs) in the green spectral range. However, the lack of deposition…”
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Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs by Heuken, L., Kortemeyer, M., Ottaviani, A., Schroder, M., Alomari, M., Fahle, D., Marx, M., Heuken, M., Kalisch, H., Vescan, A., Burghartz, J. N.

“…In this article, an optimized carbon-doped AlGaN/AlN super-lattice (SL) buffer structure for GaN-based high electron mobility transistors, grown on 200-mm Si…”
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Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures by Besendörfer, S., Meissner, E., Zweipfennig, T., Yacoub, H., Fahle, D., Behmenburg, H., Kalisch, H., Vescan, A., Friedrich, J., Erlbacher, T.

“…This work describes electrical characteristics and the correlation to material properties of high electron mobility transistor structures with a C-doped GaN…”
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Evaluation of High-Temperature High-Frequency GaN-Based LC-Oscillator Components by Ottaviani, A., Palacios, P., Zweipfennig, T., Alomari, M., Beckmann, C., Bierbusse, D., Wieben, J., Ehrler, J., Kalisch, H., Negra, R., Vescan, A., Burghartz, J. N.

“…In this work, an evaluation of the performance of discrete elements intended for an <inline-formula> <tex-math notation="LaTeX">{L}…”
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Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis by Stoklas, R., Gregušová, D., Novák, J., Vescan, A., Kordoš, P.

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Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2 by Marx, M., Grundmann, A., Lin, Y.-R., Andrzejewski, D., Kümmell, T., Bacher, G., Heuken, M., Kalisch, H., Vescan, A.

“…The influence of the main growth parameters on the growth mechanism and film formation processes during metalorganic vapor-phase epitaxy (MOVPE) of…”
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Investigation of large-area OLED devices with various grid geometries by Slawinski, M., Weingarten, M., Heuken, M., Vescan, A., Kalisch, H.

“…(Left) Excellent agreement of simulated and measured luminance distribution. (Right) Two efficient techniques for the enhancement of luminance distribution…”
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Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers by Reuters, Benjamin, Wille, A., Ketteniss, N., Hahn, H., Holländer, B., Heuken, M., Kalisch, H., Vescan, A.

“…Group III nitride heterostructures with low polarization difference recently moved into the focus of research for realization of enhancement-mode (e-mode)…”
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12 W/mm AlGaN-GaN HFETs on silicon substrates by Johnson, J.W., Piner, E.L., Vescan, A., Therrien, R., Rajagopal, P., Roberts, J.C., Brown, J.D., Singhal, S., Linthicum, K.J.

“…Al/sub 0.26/Ga/sub 0.74/N-GaN heterojunction field-effect transistors were grown by metal-organic chemical vapor deposition on high-resistivity 100-mm Si (111)…”
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Electrothermal characterization of large-area organic light-emitting diodes employing finite-element simulation by Slawinski, M., Bertram, D., Heuken, M., Kalisch, H., Vescan, A.

“…Excellent agreement of measured (a) and simulated (b) temperature distribution of an OLED. [Display omitted] ► Excellent agreement of simulation and…”
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Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates by Reuters, B., Strate, J., Hahn, H., Finken, M., Wille, A., Heuken, M., Kalisch, H., Vescan, A.

“…The growing interest in modern energy-saving illuminants for general lighting, multimedia applications and automotive industry demands for alternative low-cost…”
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3D Integrated 300°C Tunable RF Oscillator exploiting AlGaN/GaN HEMT for High Temperature Applications by Palacios, P., Zweipfennig, T., Ottaviani, A., Saeed, M., Beckmann, C., Alomari, M., Lukens, G., Kalisch, H., Burghartz, J.N., Vescan, A., Negra, R.

“…This work presents the design, implementation, and characterization of a high-temperature tunable RF oscillator utilising a developed 3D integration…”
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Growth Studies on Quaternary AlInGaN Layers for HEMT Application by Reuters, Benjamin, Wille, A., Holländer, B., Sakalauskas, E., Ketteniss, N., Mauder, C., Goldhahn, R., Heuken, M., Kalisch, H., Vescan, A.

“…Quaternary barrier layers for GaN-based high-electron-mobility transistors (HEMT) have recently been a focus of interest because of the possible…”
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Characterization of charge injection and photovoltaic effects of hybrid inorganic-organic GaN/pentacene heterostructures by Slawinski, M., Weingarten, M., Axmann, S., Urbain, F., Fahle, D., Heuken, M., Vescan, A., Kalisch, H.

“…This work investigates the electrical and optical properties of hybrid GaN/pentacene heterostructures. We identify bipolar transport in GaN/pentacene by I-V…”
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InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz by Lecourt, F., Ketteniss, N., Behmenburg, H., Defrance, N., Hoel, V., Eickelkamp, M., Vescan, A., Giesen, C., Heuken, M., De Jaeger, J.-C

“…In this letter, small- and large-signal measurements of an In 0.15 Al 0.82 N/AlN/GaN high-electron-mobility transistor (HEMT) grown on a sapphire substrate…”
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First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors by Hahn, H., Reuters, B., Kotzea, S., Lukens, G., Geipel, S., Kalisch, H., Vescan, A.

“…GaN-based devices have shown to be promising alternatives to Si-based devices in a wide range of applications. After covering several frequency bands in RF…”
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Oxygen addition to fluorine based SiN etch process: Impact on the electrical properties of AlGaN/GaN 2DEG and transistor characteristics by Hahn, H., Achenbach, J., Ketteniss, N., Noculak, A., Kalisch, H., Vescan, A.

“…► We investigate consequences using CF 4/O 2 or CF 4 dry etches for gate trench opening. ► Oxygen addition reduces the incorporation of fluorine ions. ► We…”
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HCl-assisted growth of GaN and AlN by Fahle, D., Brien, D., Dauelsberg, M., Strauch, G., Kalisch, H., Heuken, M., Vescan, A.

“…The influence of small amounts of added HCl during MOVPE growth of GaN and AlN in a hot-wall reactor is investigated. It is observed that parasitic precursor…”
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