Search Results - "Verhulst, Anne"

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  1. 1

    Molecular profiling of CD8 T cells in autochthonous melanoma identifies Maf as driver of exhaustion by Giordano, Marilyn, Henin, Coralie, Maurizio, Julien, Imbratta, Claire, Bourdely, Pierre, Buferne, Michel, Baitsch, Lukas, Vanhille, Laurent, Sieweke, Michael H, Speiser, Daniel E, Auphan-Anezin, Nathalie, Schmitt-Verhulst, Anne-Marie, Verdeil, Grégory

    Published in The EMBO journal (04-08-2015)
    “…T cells infiltrating neoplasms express surface molecules typical of chronically virus‐stimulated T cells, often termed “exhausted” T cells. We compared the…”
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    Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs by Kuo-Hsing Kao, Verhulst, A. S., Vandenberghe, W. G., Soree, B., Groeseneken, G., De Meyer, K.

    Published in IEEE transactions on electron devices (01-02-2012)
    “…Germanium is a widely used material for tunnel FETs because of its small band gap and compatibility with silicon. Typically, only the indirect band gap of Ge…”
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    Resistance to cancer immunotherapy mediated by apoptosis of tumor-infiltrating lymphocytes by Zhu, Jingjing, Powis de Tenbossche, Céline G., Cané, Stefania, Colau, Didier, van Baren, Nicolas, Lurquin, Christophe, Schmitt-Verhulst, Anne-Marie, Liljeström, Peter, Uyttenhove, Catherine, Van den Eynde, Benoit J.

    Published in Nature communications (10-11-2017)
    “…Despite impressive clinical success, cancer immunotherapy based on immune checkpoint blockade remains ineffective in many patients due to tumoral resistance…”
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    Boosting the Sensitivity of the Nanopore Field-Effect Transistor to Translocating Single Molecules by Verhulst, Anne S., Ruic, Dino, Willems, Kherim, Van Dorpe, Pol

    Published in IEEE sensors journal (15-03-2022)
    “…Nano-scaling of metal-oxide-semiconductor (MOS) field-effect transistors (FETs) is exploited to benefit the interdisciplinary field of single-molecule…”
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    Signature of Ballistic Band-Tail Tunneling Current in Tunnel FET by Bizindavyi, Jasper, Verhulst, Anne S, Soree, Bart, Groeseneken, Guido

    Published in IEEE transactions on electron devices (01-08-2020)
    “…To improve the interpretation of the tunnel field-effect transistor (TFET) measurements, we theoretically identify the signatures of the ballistic band-tail…”
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  7. 7

    Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization by Verhulst, Anne S, Saeidi, Ali, Stolichnov, Igor, Alian, Alireza, Iwai, Hiroshi, Collaert, Nadine, Ionescu, Adrian M.

    Published in IEEE transactions on electron devices (01-01-2020)
    “…The steep-slope ferroelectric tunnel-FET (SS-FeTFET), consisting of an InGaAs TFET with a sub-60 mV/dec subthreshold swing (SS) at room temperature and an…”
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  8. 8

    Targeting STAT3 and STAT5 in Tumor-Associated Immune Cells to Improve Immunotherapy by Verdeil, Grégory, Lawrence, Toby, Schmitt-Verhulst, Anne-Marie, Auphan-Anezin, Nathalie

    Published in Cancers (21-11-2019)
    “…Oncogene-induced STAT3-activation is central to tumor progression by promoting cancer cell expression of pro-angiogenic and immunosuppressive factors. STAT3 is…”
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    Figure of merit for and identification of sub-60 mV/decade devices by Vandenberghe, William G., Verhulst, Anne S., Sorée, Bart, Magnus, Wim, Groeseneken, Guido, Smets, Quentin, Heyns, Marc, Fischetti, Massimo V.

    Published in Applied physics letters (07-01-2013)
    “…A figure of merit I60 is proposed for sub-60 mV/decade devices as the highest current where the input characteristics exhibit a transition from sub- to…”
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    Calibration of Bulk Trap-Assisted Tunneling and Shockley-Read-Hall Currents and Impact on InGaAs Tunnel-FETs by Smets, Quentin, Verhulst, Anne S., Simoen, Eddy, Gundlach, David, Richter, Curt, Collaert, Nadine, Heyns, Marc M.

    Published in IEEE transactions on electron devices (01-09-2017)
    “…The tunnel-FET (TFET) is a promising candidate for future low-power logic applications, because it enables a sub-60-mV/decadesubthresholdswing. However,…”
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    Dielectric Response in Ferroelectrics Near Polarization Switching: Analytical Calculations, First-Principles Modeling, and Experimental Verification by Clima, Sergiu, Verhulst, Anne S., Bagul, Pratik, Truijen, Brecht, McMitchell, Sean R. C., De Wolf, Ingrid, Pourtois, Geoffrey, Van Houdt, Jan

    Published in IEEE transactions on electron devices (01-09-2022)
    “…Ferroelectrics (FEs) are increasingly used in nonvolatile memory applications. However, the impact of the electric dipole switching on its material parameters,…”
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  13. 13

    Process-Induced Power-Performance Variability in Sub-5-nm III-V Tunnel FETs by Xiang, Yang, Verhulst, Anne S., Yakimets, Dmitry, Parvais, Bertrand, Mocuta, Anda, Groeseneken, Guido

    Published in IEEE transactions on electron devices (01-06-2019)
    “…We examine the power-performance variability of a projected sub-5-nm GaAsSb/InGaAs vertical tunnel FET considering various process control tolerances in the…”
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  14. 14

    Intrinsic Robustness of TFET Subthreshold Swing to Interface and Oxide Traps: A Comparative PBTI Study of InGaAs TFETs and MOSFETs by Franco, Jacopo, Alian, AliReza, Vandooren, Anne, Verhulst, Anne S., Linten, Dimitri, Collaert, Nadine, Thean, Aaron

    Published in IEEE electron device letters (01-08-2016)
    “…We study the positive bias temperature instability (PBTI) of InGaAs tunnel-FETs (TFETs) with two different indium fractions (53% and 70%) and compare with…”
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  15. 15

    Corrections to "Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization" by Verhulst, Anne S., Saeidi, Ali, Stolichnov, Igor, Alian, Alireza, Iwai, Hiroshi, Collaert, Nadine, Ionescu, Adrian M.

    Published in IEEE transactions on electron devices (01-07-2020)
    “…This correspondence highlights that the Gibbs free energy description of a ferroelectric capacitor in series with a paraelectric capacitor, depends on the…”
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    Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets by Kuo-Hsing Kao, Verhulst, A. S., Vandenberghe, W. G., Soree, B., Magnus, W., Leonelli, D., Groeseneken, G., De Meyer, K.

    Published in IEEE transactions on electron devices (01-08-2012)
    “…We investigate a promising tunnel FET configuration having a gate on the source only, which is simultaneously exhibiting a steeper subthreshold slope and a…”
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  17. 17

    Part I: Impact of Field-Induced Quantum Confinement on the Subthreshold Swing Behavior of Line TFETs by Walke, Amey M., Verhulst, Anne S., Vandooren, Anne, Verreck, Devin, Simoen, Eddy, Rao, Valipe Ramgopal, Groeseneken, Guido, Collaert, Nadine, Thean, Aaron V. Y.

    Published in IEEE transactions on electron devices (01-12-2013)
    “…Trap-assisted tunneling (TAT) is a major hurdle in achieving a sub-60-mV/decade subthreshold swing (SS) in tunnel field-effect transistors (TFETs). This paper…”
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    Visualization of cytolytic T cell differentiation and granule exocytosis with T cells from mice expressing active fluorescent granzyme B by Mouchacca, Pierre, Schmitt-Verhulst, Anne-Marie, Boyer, Claude

    Published in PloS one (28-06-2013)
    “…To evaluate acquisition and activation of cytolytic functions during immune responses we generated knock in (KI) mice expressing Granzyme B (GZMB) as a fusion…”
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    On the local conductivity of individual diamond seeds and their impact on the interfacial resistance of boron-doped diamond films by Tsigkourakos, Menelaos, Hantschel, Thomas, Simon, Daniel K., Nuytten, Thomas, Verhulst, Anne S., Douhard, Bastien, Vandervorst, Wilfried

    Published in Carbon (New York) (01-11-2014)
    “…In many electroanalytical and bio-electrochemical applications conductive diamond films act as contact layers. These films are grown starting from a Si-surface…”
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