Search Results - "Verhulst, A. S."

Investigation of Imprint in FE-HfO₂ and Its Recovery by Higashi, Y., Kaczer, B., Verhulst, A. S., O'Sullivan, B. J., Ronchi, N., McMitchell, S. R. C., Banerjee, K., Piazza, L. Di, Suzuki, M., Linten, D., Van Houdt, J.

“…Ferroelectric (FE)-HfO 2 -based FETs (FEFETs) are one of the most promising candidates for emerging memories. However, the FE material suffers from a unique…”
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Nanoprober-based EBIC measurements for nanowire transistor structures by Arstila, K., Hantschel, T., Schulze, A., Vandooren, A., Verhulst, A.S., Rooyackers, R., Eyben, P., Vandervorst, W.

“…[Display omitted] ► Nanoprober-based electron beam induced current (EBIC) technique is used to study junction regions of vertical nanowire tunnel-field-effect…”
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Large Variation in Temperature Dependence of Band-to-Band Tunneling Current in Tunnel Devices by Bizindavyi, J., Verhulst, A. S., Verreck, D., Soree, Bart, Groeseneken, G.

“…The observation of a significant temperature-dependent variation in the I-V characteristics of tunneling devices is often interpreted as a signature of a…”
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Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra by Gupta, S., Simoen, E., Loo, R., Smets, Q., Verhulst, A. S., Lauwaert, J., Vrielinck, H., Heyns, M.

“…Peculiar features of the deep level transient spectroscopy (DLTS) measurements on p + − i − n + In0.53Ga0.47As tunnel diodes are explained. It is shown that…”
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Physical Insights on Steep Slope FEFETs including Nucleation-Propagation and Charge Trapping by Xiang, Y., Verhulst, A. S., Parvais, B., Horiguchi, N., Groeseneken, G., Houdt, J. Van, Bardon, M. Garcia, Alam, Md Nur K., Thesberg, M., Kaczer, B., Roussel, P., Popovici, M. I., Ragnarsson, L.-A., Truijen, B.

“…We present a kinetics-based analysis of the steep slope operation of ferroelectric (FE) FETs built on (i) a statistical multidomain nucleation-propagation…”
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Can p-channel tunnel field-effect transistors perform as good as n-channel? by Verhulst, A. S., Verreck, D., Pourghaderi, M. A., Van de Put, M., Sorée, B., Groeseneken, G., Collaert, N., Thean, A. V.-Y.

“…We show that bulk semiconductor materials do not allow perfectly complementary p- and n-channel tunnel field-effect transistors (TFETs), due to the presence of…”
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Quantitative three-dimensional carrier mapping in nanowire-based transistors using scanning spreading resistance microscopy by Schulze, A., Hantschel, T., Eyben, P., Verhulst, A.S., Rooyackers, R., Vandooren, A., Vandervorst, W.

“…The performance of nanoelectronic devices critically depends on the distribution of charge carriers inside such structures. High-vacuum scanning spreading…”
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Experimental calibration of the temperature dependence of the heterojunction bandgap in III-V tunneling devices by Bizindavyi, J., Verhulst, A. S., Smets, Q., Soree, B., Groeseneken, G.

“…The capability to achieve sub-60 mV / dec subthreshold swings through quantum mechanical (QM) band-to-band tunneling (BTBT) has established the tunnel…”
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Determination of Ultimate Leakage Through Rutile TiO2 and Tetragonal ZrO2 From Ab Initio Complex Band Calculations by CLIMA, Sergiu, KACZER, B, GOVOREANU, B, POPOVICI, M, SWERTS, J, VERHULST, A. S, JURCZAK, M, DE GENDT, S, POURTOIS, G

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Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode by El Kazzi, S., Alian, A., Hsu, B., Verhulst, A.S., Walke, A., Favia, P., Douhard, B., Lu, W., del Alamo, J.A., Collaert, N., Merckling, C.

“…•Detailed structural, electrical and simulation studies of n + InAs/p + GaSb Esaki tunnel diodes.•Influence of interface stoichiometry monitoring on BTBT…”
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Determination of Ultimate Leakage Through Rutile \hbox and Tetragonal \hbox From Ab Initio Complex Band Calculations by Clima, S., Kaczer, B., Govoreanu, B., Popovici, M., Swerts, J., Verhulst, A. S., Jurczak, M., De Gendt, S., Pourtois, G.

“…First-principle complex band structures have been computed for rutile TiO 2 and tetragonal ZrO 2 insulating materials that are of current technological…”
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Novel method to determine the band offset in hetero staggered bandgap TFET using Esaki diodes by Smets, Q., Verhulst, A. S., El Kazzi, S., Mocuta, A., Thean, V.-Y, Heyns, M. M.

“…Summary form only given. In heterojunction Tunneling Field-Effect Transistors (TFET), the effective tunneling bandgap (E g,eff ) has a strong impact on the…”
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New devices for internet of things: A circuit level perspective by Dehaene, W., Verhulst, A. S.

“…This paper discusses the criteria a new device has to meet in order to surpass the capabilities of MOSFET in realizing internet-of-things circuits. The main…”
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Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs by Kuo-Hsing Kao, Verhulst, A. S., Vandenberghe, W. G., Soree, B., Groeseneken, G., De Meyer, K.

“…Germanium is a widely used material for tunnel FETs because of its small band gap and compatibility with silicon. Typically, only the indirect band gap of Ge…”
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HfZrO Ferroelectric Characterization and Parameterization of Response to Arbitrary Excitation Waveform by Alam, Md Nur K., Thesberg, M., Kaczer, B., Roussel, Ph, Vermeulen, B., Truijen, B., Popovici, M. I., Ragnarsson, L.-A., Verhulst, A. S., Horiguchi, N., Heyns, M., Van Houdt, J.

“…Response of a metal\ferroelectric Hf 0.5 Zr 0.5 O 2 \metal capacitor to an arbitrary excitation is investigated by polarization reversal curves and switching…”
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Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets by Kuo-Hsing Kao, Verhulst, A. S., Vandenberghe, W. G., Soree, B., Magnus, W., Leonelli, D., Groeseneken, G., De Meyer, K.

“…We investigate a promising tunnel FET configuration having a gate on the source only, which is simultaneously exhibiting a steeper subthreshold slope and a…”
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Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors by Verreck, D., Verhulst, A. S., Kuo-Hsing Kao, Vandenberghe, W. G., De Meyer, K., Groeseneken, G.

“…The tunnel field-effect transistor (TFET) is a promising candidate to replace the metal-oxide-semiconductor field-effect transistor in advanced technology…”
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Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates by Verhulst, A.S., Vandenberghe, W.G., Maex, K., De Gendt, S., Heyns, M.M., Groeseneken, G.

“…As a solution to the low on-current of silicon-based tunnel-FETs (TFETs), the source material of the n-channel TFET is replaced with the small-bandgap material…”
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A new complementary hetero-junction vertical Tunnel-FET integration scheme by Rooyackers, R., Vandooren, A., Verhulst, A. S., Walke, A., Devriendt, K., Locorotondo, S., Demand, M., Bryce, G., Loo, R., Hikavyy, A., Vandeweyer, T., Huyghebaert, C., Collaert, N., Thean, A.

“…This paper presents a new integration scheme for complementary hetero-junction vertical Tunnel FETs (VTFETs), whereby a sacrificial source layer is used during…”
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Counterdoped Pocket Thickness Optimization of Gate-on-Source-Only Tunnel FETs by Kuo-Hsing Kao, Verhulst, A. S., Vandenberghe, W. G., De Meyer, K.

“…The optimized tunnel field-effect transistor with a gate electrode overlapping the source region exhibits a steeper subthreshold swing (SS) and a higher…”
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