Search Results - "Vergeles, Pavel S."

An Experimental Study of Dislocation Dynamics in GaN by Yakimov, Eugene B, Kulanchikov, Yury O, Vergeles, Pavel S

“…The dynamics of dislocations introduced through indentation or scratching at room temperature into a few GaN layers that were grown using the HVPE, MOCVD and…”
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Dislocations introduced in n-GaN at room temperature cause conductivity inversion by Yakimov, Eugene B., Vergeles, Pavel S., Polyakov, Alexander Y., Shchemerov, Ivan V., Chernyh, A.V., Vasilev, A.A., Kochkova, A.I., Lee, In-Hwan, Pearton, S.J.

“…•Dislocations are introduced into n-GaN at room temperature by scratching.•Measurement of the spatial properties show that dislocation introduction causes type…”
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Effect of low-energy electron irradiation on voltage-capacity curves of Al/SiO2/Si structure by Kulanchikov, Yuriy O., Vergeles, Pavel S., Yakimov, Eugene B.

“…Charging of dielectric targets by electron irradiation is a well-known phenomenon which should be taken into account in characterization of dielectric…”
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Estimations of Low Temperature Dislocation Mobility in GaN by Orlov, Valeri I., Vergeles, Pavel S., Yakimov, Eugene B., Li, Xingji, Yang, Jianqun, Lv, Gang, Dong, Shangli

“…The size of dislocation rosettes introduced by indentation in the temperature range from 300 to 773 K are studied. The dislocation velocity and its temperature…”
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Temperature Dependence of Low‐Energy Electron Beam Irradiation Effect on Optical Properties of MQW InGaN/GaN Structures by Yakimov, Eugene B., Polyakov, Alexander Y., Vergeles, Pavel S.

“…The low‐energy electron beam irradiation (LEEBI) effect at 80 K on the optical properties of InGaN/GaN multiple quantum well structures has been studied. It is…”
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Radiation enhanced basal plane dislocation glide in GaN by Yakimov, Eugene B., Vergeles, Pavel S., Polyakov, Alexander Y., Lee, In-Hwan, Pearton, Stephen J.

“…A movement of basal plane segments of dislocations in GaN films grown by epitaxial lateral overgrowth under low energy electron beam irradiation (LEEBI) was…”
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