Search Results - "Venkatesan Ravindran, Prasanna"

Antiferroelectric negative capacitance from a structural phase transition in zirconia by Hoffmann, Michael, Wang, Zheng, Tasneem, Nujhat, Zubair, Ahmad, Ravindran, Prasanna Venkatesan, Tian, Mengkun, Gaskell, Anthony Arthur, Triyoso, Dina, Consiglio, Steven, Tapily, Kandabara, Clark, Robert, Hur, Jae, Pentapati, Sai Surya Kiran, Lim, Sung Kyu, Dopita, Milan, Yu, Shimeng, Chern, Winston, Kacher, Josh, Reyes-Lillo, Sebastian E., Antoniadis, Dimitri, Ravichandran, Jayakanth, Slesazeck, Stefan, Mikolajick, Thomas, Khan, Asif Islam

“…Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole…”
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Conditions for Domain-Free Negative Capacitance by Ravindran, Prasanna Venkatesan, Ravikumar, Priyankka Gundlapudi, Khan, Asif Islam

“…While negative capacitance (NC) has been demonstrated in ferroelectric-dielectric (FE-DE) heterostructures in the form of capacitance enhancement, all…”
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Machine Learning-Assisted Statistical Variation Analysis of Ferroelectric Transistor: From Experimental Metrology to Adaptive Modeling by Choe, Gihun, Ravindran, Prasanna Venkatesan, Hur, Jae, Lederer, Maximilian, Reck, Andre, Khan, Asif, Yu, Shimeng

“…A novel machine learning (ML)-assisted approach is proposed for investigating the variability of ferroelectric field-effect transistor (FeFET) to shorten the…”
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Characterizing HfO2-Based Ferroelectric Tunnel Junction in Cryogenic Temperature by Hur, Jae, Park, Chinsung, Choe, Gihun, Prasanna Venkatesan Ravindran, Asif Islam Khan, Yu, Shimeng

“…Since the discovery of ferroelectric properties in doped HfO2, various types of memory devices have emerged based on this novel material. Especially, the…”
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BEOL-Compatible Superlattice FEFET Analog Synapse With Improved Linearity and Symmetry of Weight Update by Aabrar, Khandker Akif, Kirtania, Sharadindu Gopal, Liang, Fu-Xiang, Gomez, Jorge, Jose, Matthew San, Luo, Yandong, Ye, Huacheng, Dutta, Sourav, Ravikumar, Priyankka G., Ravindran, Prasanna Venkatesan, Khan, Asif Islam, Yu, Shimeng, Datta, Suman

“…Pseudo-crossbar arrays using ferroelectric field effect transistor (FEFET) mitigates weight movement and allows in situ vector-matrix multiplication (VMM),…”
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Why Do Ferroelectrics Exhibit Negative Capacitance? by Hoffmann, Michael, Ravindran, Prasanna Venkatesan, Khan, Asif Islam

“…The Landau theory of phase transitions predicts the presence of a negative capacitance in ferroelectric materials based on a mean-field approach. While recent…”
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A Ge-Channel Ferroelectric Field Effect Transistor With Logic-Compatible Write Voltage by Das, Dipjyoti, Ravindran, Prasanna Venkatesan, Park, Chinsung, Tasneem, Nujhat, Wang, Zheng, Chen, Hang, Chern, Winston, Yu, Shimeng, Datta, Suman, Khan, Asif

“…A major roadblock for the integration of ferroelectric-field-effect transistors (FEFETs) at advanced technology nodes for embedded memory applications is their…”
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Material Choices for Tunnel Dielectric Layer and Gate Blocking Layer for Ferroelectric NAND Applications by Fernandes, Lance, Venkatesan Ravindran, Prasanna, Song, Taeyoung, Das, Dipjyoti, Park, Chinsung, Afroze, Nashrah, Tian, Mengkun, Chen, Hang, Chern, Winston, Kim, Kijoon, Woo, Jongho, Lim, Suhwan, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Yu, Shimeng, Datta, Suman, Khan, Asif

“…We present an experimental study to compare the impacts of different dielectric materials - Al 2 O 3 and SiO 2 used as the tunnel dielectric layer (TDL) and…”
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Differential charge boost in hysteretic ferroelectric–dielectric heterostructure capacitors at steady state by Tasneem, Nujhat, Ravindran, Prasanna Venkatesan, Wang, Zheng, Gomez, Jorge, Hur, Jae, Yu, Shimeng, Datta, Suman, Khan, Asif Islam

“…A ferroelectric material in a ferroelectric–dielectric heterostructure can provide a charge boost, as often discussed in the context of negative capacitance,…”
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Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions by Ravikumar, Priyankka Gundlapudi, Ravindran, Prasanna Venkatesan, Aabrar, Khandker Akif, Song, Taeyoung, Kirtania, Sharadindu Gopal, Das, Dipjyoti, Park, Chinsung, Afroze, Nashrah, Tian, Mengkun, Yu, Shimeng, Islam, Ahmad Ehtesham, Datta, Suman, Mahapatra, Souvik, Khan, Asif

“…In this work, we report the first comprehensive time-dependent dielectric breakdown (TDDB) study on ultra-thin HfO 2 -based ferroelectric under bipolar stress…”
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Experimental demonstration and modeling of a ferroelectric gate stack with a tunnel dielectric insert for NAND applications by Das, Dipjyoti, Park, Hyeonwoo, Wang, Zekai, Zhang, Chengyang, Ravindran, Prasanna Venkatesan, Park, Chinsung, Afroze, Nashrah, Hsu, Po-Kai, Tian, Mengkun, Chen, Hang, Chern, Winston, Lim, Suhwan, Kim, Kwangsoo, Kim, Kijoon, Kim, Wanki, Ha, Daewon, Yu, Shimeng, Datta, Suman, Khan, Asif

“…We experimentally demonstrate, for the first time, that the insertion of an Al 2 O 3 layer in the middle of the ferroelectric (FE) Hf 0.5 Zr 0.5 O 2 (HZO)…”
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Ferroelectric Gate Stack Engineering with Tunnel Dielectric Insert for Achieving High MemoryWindow in FEFETs for NAND Applications by Das, Dipjyoti, Park, Hyeonwoo, Wang, Zekai, Zhang, Chengyang, Ravindran, Prasanna Venkatesan, Park, Chinsung, Afroze, Nashrah, Hsu, Po-Kai, Tian, Mengkun, Chen, Hang, Chern, Winston, Lim, Suhwan, Kim, Kwangsoo, Kim, Kijoon, Kim, Wanki, Ha, Daewon, Yu, Shimeng, Datta, Suman, Khan, Asif

“…We experimentally demonstrate a novel gate stack engineering technique by introducing a Tunnel Dielectric Layer (TDL) between two Ferroelectric (FE) layers,…”
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Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation by Das, Dipjyoti, Fernandes, Lance, Ravindran, Prasanna Venkatesan, Song, Taeyoung, Park, Chinsung, Afroze, Nashrah, Tian, Mengkun, Chen, Hang, Chem, Winston, Kim, Kijoon, Woo, Jongho, Lim, Suhwan, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Yu, Shimeng, Datta, Suman, Khan, Asif

“…We report a framework for designing a ferroelectric gate stack for vertical NAND with efficient multi-bit performance by evaluating various gate stacks,…”
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Characterizing HfO 2 -Based Ferroelectric Tunnel Junction in Cryogenic Temperature by Hur, Jae, Park, Chinsung, Choe, Gihun, Ravindran, Prasanna Venkatesan, Khan, Asif Islam, Yu, Shimeng

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Characterizing HfO } -Based Ferroelectric Tunnel Junction in Cryogenic Temperature by Hur, Jae, Park, Chinsung, Choe, Gihun, Ravindran, Prasanna Venkatesan, Khan, Asif Islam, Yu, Shimeng

“…Since the discovery of ferroelectric properties in doped HfO<inline-formula> <tex-math notation="LaTeX">_{\text{2}}</tex-math> </inline-formula>, various types…”
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Machine Learning Assisted Statistical Variation Analysis of Ferroelectric Transistors: From Experimental Metrology to Predictive Modeling by Choe, Gihun, Ravindran, Prasanna Venkatesan, Lu, Anni, Hur, Jae, Lederer, Maximilian, Reck, Andre, Lombardo, Sarah, Afroze, Nashrah, Kacher, Josh, Khan, Asif Islam, Yu, Shimeng

“…We proposed a novel machine learning (ML)-assisted methodology to analyze the variability of ferroelectric field-effect transistor (FeFET) with raw data from…”
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Quantum phase transition in ferroelectric-paraelectric heterostructures by Ravindran, Prasanna Venkatesan, Khan, Asif Islam

“…Phase transition between ferroelectricity and quantum paraelectricity via non-thermal tuning parameters can lead to quantum critical behavior and associated…”
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BEOL Compatible Superlattice FerroFET-based High Precision Analog Weight Cell with Superior Linearity and Symmetry by Aabrar, Khandker Akif, Gomez, Jorge, Kirtania, Sharadindu Gopal, Jose, Matthew San, Luo, Yandong, Ravikumar, Priyankka G., Ravindran, Prasanna Venkatesan, Ye, Huacheng, Banerjee, Sanjukta, Dutta, Sourav, Khan, Asif Islam, Yu, Shimeng, Datta, Suman

“…Off-chip DRAM memory accesses limit the energy efficiency and training time of state-of-the-art deep neural networks (DNN). Compute-in-memory (CIM)…”
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A microscopic "toy" model of ferroelectric negative capacitance by Hoffmann, Michael, Ravindran, Prasanna Venkatesan, Khan, Asif Islam

“…The continued miniaturization of nanoelectronic devices approaches its fundamental physical limits due to power dissipation. Negative capacitance field-effect…”
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Name Familiarity Detection using EEG-based Brain Computer Interface by Ravindran, Prasanna Venkatesan, Vinod, A. P.

“…Electroencephalography (EEG)-based Brain Computer Interface has been used for image and voice familiarity detection in earlier works. It is known that…”
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