Search Results - "Venkatesan, T. N. C."

Optical bistability in semiconductors by Gibbs, H. M., McCall, S. L., Venkatesan, T. N. C., Gossard, A. C., Passner, A., Wiegmann, W.

“…Optical bistability has been observed in a semiconductor for the first time. The bistable etalon consists of a GaAlAs-GaAs-GaAlAs…”
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Time-resolved reflectivity of ion-implanted silicon during laser annealing by Auston, D. H., Surko, C. M., Venkatesan, T. N. C., Slusher, R. E., Golovchenko, J. A.

“…The time-resolved reflectivity at 0.63 μm from arsenic-implanted silicon crystals has been measured during annealing by a 1.06-μm laser pulse of 50-ns…”
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Dynamics of Q -switched laser annealing by Auston, D. H., Golovchenko, J. A., Simons, A. L., Surko, C. M., Venkatesan, T. N. C.

“…Using time-resolved optical-reflectivity measurements, the duration of the thin liquid layer accompanying Q-switched laser annealing in Si, Ge, and GaAs has…”
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Optical modulation by optical tuning of a cavity by Gibbs, H. M., Venkatesan, T. N. C., McCall, S. L., Passner, A., Gossard, A. C., Wiegmann, W.

“…A signal beam transmitted by a Fabry-Perot cavity is modulated by a control beam which changes the refractive index of the intracavity medium. High finesse at…”
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Dual-wavelength laser annealing by Auston, D. H., Golovchenko, J. A., Venkatesan, T. N. C.

“…A simple and efficient method of annealing ion-implantation damage in semiconductors is demonstrated which utilizes a relatively weak optical pulse in the…”
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Differential Gain and Bistability Using a Sodium-Filled Fabry-Perot Interferometer by Gibbs, H. M., McCall, S. L., Venkatesan, T. N. C.

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Optical bistability and differential gain between 85 and 296 °K in a Fabry-Perot containing ruby by Venkatesan, T. N. C., McCall, S. L.

“…Bistability, differential gain, discriminator, clipper, and limier actions were observed using a plano-concave Fabry-Perot cavity containing ruby. Input powers…”
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Annealing of Te-implanted GaAs by ruby laser irradiation by Golovchenko, J. A., Venkatesan, T. N. C.

“…A single pulse of ruby laser radiation is shown to cause significant regrowth in the amorphous region of heavily ion-implanted GaAs. The implanted Te atoms and…”
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Calculation of the dynamics of surface melting during laser annealing by Surko, C. M., Simons, A. L., Auston, D. H., Golovchenko, J. A., Slusher, R. E., Venkatesan, T. N. C.

“…We present a thermal transport model to describe the melting and resolidification of semiconductors which is observed to occur during annealing with a pulsed…”
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cw argon laser annealing of ion-implanted silicon by Auston, D. H., Golovchenko, J. A., Smith, P. R., Surko, C. M., Venkatesan, T. N. C.

“…We report on the annealing behavior of ion-implanted silicon exposed to cw argon laser radiation. The quality of the annealing was studied using channeling, in…”
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Dose dependence in the laser annealing of arsenic-implanted silicon by Venkatesan, T. N. C., Golovchenko, J. A., Poate, J. M., Cowan, P., Celler, G. K.

“…In the laser annealing of silicon by Nd : YAG laser irradiation a dose dependence of the annealing threshold and final impurity depth distribution has been…”
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Study of surface crystallinity and stoichiometry of laser-annealed GaAs using time-resolved reflectivity and channeling by Venkatesan, T. N. C., Auston, D. H., Golovchenko, J. A., Surko, C. M.

“…The surface crystallinity and stoichiometry of tellurium-implanted GaAs annealed with a frequency-doubled Nd:glass laser using time-resolved reflectivity and…”
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THE THEORY AND EXPERIMENT OF AN OPTICAL DEVICE EXHIBITING BISTABILITY AND DIFFERENTIAL GAIN by VENKATESAN, T N. C

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External off and on switching of a bistable optical device by Tarng, S. S., Tai, K., Jewell, J. L., Gibbs, H. M., Gossard, A. C., McCall, S. L., Passner, A., Venkatesan, T. N. C., Wiegmann, W.

“…A GaAs etalon has been switched on in a detector-limited time of 200 ps by a 10-ps, 600-nm, 1-nJ pulse and switched off in ⩽20 ns by a 7-ns, 600-nm, 300-nJ…”
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Ultrashort laser: Lasing in MBE GaAs layer with perpendicular-to-film optical excitation and emission by Passner, A., Gibbs, H., Gossard, A., McCall, S., Venkatesan, T., Wiegmann, W.

“…Lasing was observed in a 4.5 μm thick GaAs MBE-grown heterostructure (0.2 μm Al 0.42 Ga 0.58 As, 4.1 μm GaAs, 0.21 μm AlGaAs). The laser was driven by pulses…”
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