Search Results - "Vempaire, D"

Catalytic effect of additives on the hydrogen absorption properties of nano-crystalline MgH2(X) composites by Rivoirard, S, de Rango, P, Fruchart, D, Charbonnier, J, Vempaire, D

“…Hydrogen sorption properties of MgH2–X nanocomposite powders (X=V, Nb, Ti, TiCN) are conditioned by the milling step. The respective roles of the additives and…”
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Structural and magnetic properties of Ni3N synthesized by multidipolar microwave plasma-assisted reactive sputtering by VEMPAIRE, D, MIRAGLIA, S, PELLETIER, J, FRUCHART, D, HLIL, E. K, ORTEGA, L, SULPICE, A, FETTAR, F

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Multi-dipolar plasmas for plasma-based ion implantation and plasma-based ion implantation and deposition by Béchu, S., Maulat, O., Arnal, Y., Vempaire, D., Lacoste, A., Pelletier, J.

“…The use of distributed electron cyclotron resonance (DECR) plasma sources for plasma-based ion implantation (PBII) presents limitations in terms of plasma…”
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Plasma-based ion implantation: a valuable industrial route for the elaboration of innovative materials by Vempaire, D, Miraglia, S, Sulpice, A, Ortega, L, Hlil, E.K, Fruchart, D, Pelletier, J

“…Plasma-based ion implantation is used to modify the magnetic properties of a thin film of nickel first deposited by microwave plasma assisted sputtering…”
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Probing radical kinetics in the afterglow of pulsed discharges by absorption spectroscopy with light emitting diodes: Application to BCl radical by Vempaire, D., Cunge, G.

“…Measuring decay rates of radical densities in the afterglow of pulsed plasmas is a powerful approach to determine their gas phase and surface loss kinetics. We…”
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Gas convection caused by electron pressure drop in the afterglow of a pulsed inductively coupled plasma discharge by Cunge, G., Vempaire, D., Sadeghi, N.

“…Neutral depletion is an important phenomenon in high-density plasmas. We show that in pulsed discharges, the neutral depletion caused by the electron pressure…”
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Probing radical kinetics in the afterglow of pulsed dischargesby absorption spectroscopy with light emitting diodes:Application to BCl radical by Vempaire, D., Cunge, G.

“…Measuring decay rates of radical densities in the afterglow of pulsed plasmas is a powerful approach to determine their gas phase and surface loss kinetics. We…”
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Probing radical kinetics in the afterglow of pulsed discharges by absorption spectroscopy with LED: application to BCl radical by Vempaire, D., Cunge, G.

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Gas convection caused by electron pressure drop in the afterglowof a pulsed inductively coupled plasma discharge by Cunge, G., Vempaire, D., Sadeghi, N.

“…Neutral depletion is an important phenomenon in high-density plasmas. We show that in pulsed discharges, the neutral depletion caused by the electron pressure…”
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Gas convection caused by electron pressure variations in pulsed discharge by Cunge, G., Vempaire, D., Sadeghi, N.

“…Neutral gas temperature (Tg) is measured in an industrial high-density inductively coupled etch reactor operating in CF4⁠, SF6⁠, O2⁠, Cl2⁠, or HBr plasmas. Two…”
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Broadband and time-resolved absorption spectroscopy with light emitting diodes: Application to etching plasma monitoring by Cunge, G., Vempaire, D., Touzeau, M., Sadeghi, N.

“…Broad band absorption spectroscopy is widely used to measure the concentration of radicals, which is important to understand the physical chemistry of many…”
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Structural and magnetic properties of Ni 3N synthesized by multidipolar microwave plasma-assisted reactive sputtering by Vempaire, D., Miraglia, S., Pelletier, J., Fruchart, D., Hlil, E.K., Ortega, L., Sulpice, A., Fettar, F.

“…Nickel nitride layers have been synthesized by using microwave plasma-assisted reactive sputtering. In the Ar–N 2 mixture used for the deposition, the Ar…”
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Structural and magnetic properties of Ni sub(3)N synthesized by multidipolar microwave plasma-assisted reactive sputtering by Vempaire, D, Miraglia, S, Pelletier, J, Fruchart, D, Hlil, E K, Ortega, L, Sulpice, A, Fettar, F

“…Nickel nitride layers have been synthesized by using microwave plasma-assisted reactive sputtering. In the Ar-N sub(2) mixture used for the deposition, the Ar…”
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Gas temperature measurement in CF4, SF6, O2, Cl2, and HBr inductively coupled plasmas by Cunge, G., Ramos, R., Vempaire, D., Touzeau, M., Neijbauer, M., Sadeghi, N.

“…Neutral gas temperature (Tg) is measured in an industrial high-density inductively coupled etch reactor operating in CF4, SF6, O2, Cl2, or HBr plasmas. Two…”
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Gas temperature measurement in C F 4 , S F 6 , O 2 , Cl 2 , and HBr inductively coupled plasmas by Cunge, G., Ramos, R., Vempaire, D., Touzeau, M., Neijbauer, M., Sadeghi, N.

“…Neutral gas temperature ( T g ) is measured in an industrial high-density inductively coupled etch reactor operating in C F 4 , S F 6 , O 2 , Cl 2 , or HBr…”
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Structure and magnetic properties of nickel nitride thin film synthesized by plasma-based ion implantation by Vempaire, D., Miraglia, S., Sulpice, A., Ortega, L., Hlil, E.K., Fruchart, D., Pelletier, J.

“…Nickel layers have been implanted with nitrogen using plasma-based ion implantation. We have been able to stabilize nickel nitride with the Ni3N stoichiometry…”
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Structure and magnetic properties of thin films synthesized by plasma-based ion implantation by Vempaire, D., Fruchart, D., Gouttebarron, R., Hlil, E.K., Miraglia, S., Ortega, L., Pelletier, J.

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Structure and magnetic properties of Mn 4 N thin films synthesized by plasma-based ion implantation by Vempaire, D., Fruchart, D., Gouttebarron, R., Hlil, E.K., Miraglia, S., Ortega, L., Pelletier, J.

“…Plasma-based ion implantation was used to synthesize the manganese nitride Mn 4 N by implanting nitrogen in manganese layers first deposited by sputtering…”
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Plasma-based ion implantation: a valuable industrial route for the elaboration of innovative materials by VEMPAIRE, D, MIRAGLIA, S, SULPICE, A, ORTEGA, L, HLIL, E. K, FRUCHART, D, PELLETIER, J

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Multi-dipolar plasmas for plasma-based ion implantation and plasma-based ion implantation and deposition by BECHU, S, MAULAT, O, ARNAL, Y, VEMPAIRE, D, LACOSTE, A, PELLETIER, J

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