Search Results - "Vdovin, V.I"

Fabrication of polycrystalline silicon thin films from a-SiOx via the inverted aluminum-induced layer exchange process by Zamchiy, A.O., Baranov, E.A., Maximovskiy, E.A., Volodin, V.A., Vdovin, V.I., Gutakovskii, A.K., Korolkov, I.V.

“…•Poly-Si films were first fabricated using a-SiOx via the inverted-ALILE on glass substrates.•The presence of oxygen in the system suppressed the formation Si…”
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Structure and optical properties of Si and SiGe layers grown on SiO2 by chemical vapor deposition by Shklyaev, A.A., Vdovin, V.I., Volodin, V.A., Gulyaev, D.V., Kozhukhov, A.S., Sakuraba, M., Murota, J.

“…The properties of thin Si and SiGe layers grown on SiO2 by chemical vapor deposition (CVD) were studied using transmission electron and atomic force…”
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Nature and origin of pure edge dislocations in low mismatched epitaxial structures by Vdovin, V.I.

“…A study of pure edge misfit dislocations (L-MDs) in SiGe Si , Ge GaAs , GaAlAsP GaAs , GaAlAsSb GaSb and InGaAsP InP epitaxial structures grown by different…”
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Layer exchange during aluminum-induced crystallization of silicon suboxide thin films by Zamchiy, A.O., Baranov, E.A., Merkulova, I.E., Korolkov, I.V., Vdovin, V.I., Gutakovskii, A.K., Volodin, V.A.

“…•Al-induced crystallization of a-SiO1.8 in the layer exchange mode was carried out.•Annealing at 550 °C led to the formation of a continuous poly-Si thin…”
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Hafnia and alumina stacks as UTBOXs in silicon-on insulator by Popov, V.P., Antonov, V.A., Gutakovskiy, A.K., Tyschenko, I.E., Vdovin, V.I., Miakonkikh, A.V., Rudenko, K.V.

“…•In SOI pseudo-MOSFETs with 20 nm hafnia alumina interlayers show normal gate-drain characteristics after an RTA ≥ 950 °C with the charge-carrier mobilities…”
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Ferroelectric properties of SOS and SOI pseudo-MOSFETs with HfO2 interlayers by Popov, V.P., Antonov, V.A., Ilnitsky, M.A., Tyschenko, I.E., Vdovin, V.I., Miakonkikh, A.V., Rudenko, K.V.

“…•SOI and SOS pseudo-MOSFETs with 20 nm hafnia interlayers show normal gate-drain characteristics after annealing ≥ 1000 °C with the carrier mobility as in bulk…”
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Blister suppression in the CO+ molecule implanted SOI substrates with ultrathin buried oxides by Popov, V.P., Tikhonenko, F.V., Antonov, V.A., Tarkov, S.M., Gutakovskii, A.K., Vdovin, V.I., Simakin, S.G., Rudenko, K.V.

“…The formation of gettering layers in CO+ ion implanted (COII) n-type (001) silicon wafers with a layer of thermal SiO2 and silicon-on-insulator (SOI) was first…”
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Misfit dislocation generation in SiGe epitaxial layers supersaturated with intrinsic point defects by Vdovin, V.I., Zakharov, N.D.

“…Misfit dislocation generation in SiGe/Si(001) heterostructures supersaturated with the vacancies (LT epitaxial growth) or self-interstitials (ion implantation)…”
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Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix by Volodin, V. A., Gambaryan, M. P., Cherkov, A. G., Vdovin, V. I., Stoffel, M., Rinnert, H., Vergnat, M.

“…We investigate the structural and optical properties of GeO/SiO 2 multilayers obtained by evaporation of GeO 2 and SiO 2 powders under ultrahigh vacuum…”
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Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers by Vdovin, V. I., Ubyivovk, E. V., Vyvenko, O. F.

“…The dislocation networks in structures with hydrophilically bonded Si (001) wafers are investigated by transmission electron microscopy. Networks with…”
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Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence by Sobolev, N.A., Kalyadin, A.E., Shek, E.I., Shtel makh, K.F., Gutakovskii, A.K., Vdovin, V.I., Mikhaylov, A.N., Tetel'baum, D.I., Li, D., Yang, D., Fedina, L.I.

“…Electroluminescence (EL) from light-emitting diodes (LEDs) at wavelengths in the range 1000-1650 nm, current densities of up to 10 A/cm2, and temperature of 64…”
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Specific features and mechanisms of photoluminescence of nanostructured silicon carbide films grown on silicon in vacuum by Orlov, L. K., Shteinman, E. A., Ivina, N. L., Vdovin, V. I.

“…The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of…”
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Photoluminescence in silicon implanted with erbium ions at an elevated temperature by Sobolev, N. A., Kalyadin, A. E., Shek, E. I., Sakharov, V. I., Serenkov, I. T., Vdovin, V. I., Parshin, E. O., Makoviichuk, M. I.

“…Photoluminescence spectra of n -type silicon upon implantation with erbium ions at 600°C and oxygen ions at room temperature and subsequent annealings at…”
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Extended structural defects and their influence on the electroluminescence in efficient Si light-emitting diodes by Sobolev, N.A., Emel’yanov, A.M., Shek, E.I., Vdovin, V.I.

“…We report our results on electroluminescence (EL) in the range of 1.0–1.6μm, structural defects and electrophysical properties of light-emitting diodes…”
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Defect structure of erbium-doped [formula omitted] silicon layers formed by solid phase epitaxy by Kyutt, R.N, Sobolev, Nikolai A, Nikolaev, Yu.A, Vdovin, V.I

“…Erbium-doped layers have been produced on 〈1 1 1〉 -oriented silicon wafers using high-energy amorphizing Er implants and solid phase epitaxy (SPE)…”
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Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge + ions by Avrutin, V.S., Izyumskaya, N.F., Vyatkin, A.F., Zinenko, V.I., Agafonov, Yu.A., Irzhak, D.V., Roshchupkin, D.V., Steinman, E.A., Vdovin, V.I., Yugova, T.G.

“…Pseudomorphic Si 0.76Ge 0.24/Si heterostructures grown by molecular beam epitaxy were implanted with Ge + ions at 400 °C in such a way that an ion-damaged…”
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Structural defects and dislocation-related photoluminescence in erbium-implanted silicon by Sobolev, N.A., Emel'yanov, A.M., Shek, E.I., Sakharov, V.I., Serenkov, I.T., Nikolaev, Yu.A., Vdovin, V.I., Yugova, T.G., Makovijchuk, M.I., Parshin, E.O., Pizzini, S.

“…Structural defects and optical features of p-type CzSi after implantation of erbium ions with 1 MeV energy and 1×10 14 cm −2 dose followed by annealing at…”
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Low-temperature strain relaxation in ion-irradiated pseudomorphic SiGe/Si structures by Avrutin, V.S, Izyumskaya, N.F, Vyatkin, A.F, Zinenko, V.I, Agafonov, Yu.A, Irzhak, D.V, Roshchupkin, D.V, Steinman, E.A, Vdovin, V.I, Yugova, T.G

“…The effect of non-equilibrium point defects on strain relaxation in pseudomorphic Si 0.76Ge 0.24/Si heterostructures was studied by X-ray diffraction (XRD) and…”
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Dislocation pattern formation in epitaxial structures based on SiGe alloys by Yugova, T.G, Vdovin, V.I, Mil’vidskii, M.G, Orlov, L.K, Tolomasov, V.A, Potapov, A.V, Abrosimov, N.V

“…Single layer SiGe/Si and Si/SiGe heterostructures were grown by the molecular beam epitaxy technique with Si solid and GeH 4 gas sources. Dependence of…”
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Dislocation-related luminescence in Er-implanted silicon by Sobolev, N.A., Gusev, O.B., Shek, E.I., Vdovin, V.I., Yugova, T.G., Emel'yanov, A.M.

“…The behavior of luminescence spectra and structural defects in single crystal Czochralski silicon after erbium implantation at 1–1.8 MeV energies and 1×10 13…”
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