Search Results - "Vaysset, A."

Spin-Hall-assisted magnetic random access memory by van den Brink, A., Cosemans, S., Cornelissen, S., Manfrini, M., Vaysset, A., Van Roy, W., Min, T., Swagten, H. J. M., Koopmans, B.

“…We propose a write scheme for perpendicular spin-transfer torque magnetoresistive random-access memory that significantly reduces the required tunnel current…”
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Non-volatile spin wave majority gate at the nanoscale by Zografos, O., Dutta, S., Manfrini, M., Vaysset, A., Sorée, B., Naeemi, A., Raghavan, P., Lauwereins, R., Radu, I. P.

“…A spin wave majority fork-like structure with feature size of 40 nm, is presented and investigated, through micromagnetic simulations. The structure consists…”
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Substrate-enhanced supercooling in AuSi eutectic droplets by Schülli, T. U, Daudin, R, Renaud, G, Vaysset, A, Geaymond, O, Pasturel, A

“…The phenomenon of supercooling in metals—that is, the preservation of a disordered, fluid phase in a metastable state well below the melting point—has led to…”
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Beyond first-order finite element schemes in micromagnetics by Kritsikis, E., Vaysset, A., Buda-Prejbeanu, L.D., Alouges, F., Toussaint, J.-C.

“…Magnetization dynamics in ferromagnetic materials is ruled by the Landau–Lifshitz–Gilbert equation (LLG). Reliable schemes must conserve the magnetization…”
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Formation, stability, and atomic structure of the Si ( 111 ) − ( 6 × 6 ) Au surface reconstruction: A quantitative study using synchrotron radiation by Daudin, R., Nogaret, T., Vaysset, A., Schülli, T. U., Pasturel, A., Renaud, G.

“…The conditions of formation of the Au-induced Si-(6 x 6) reconstruction, its stability, as well as its atomic structure are studied experimentally using…”
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Finite Element Modeling of Charge- and Spin-Currents in Magnetoresistive Pillars With Current Crowding Effects by Strelkov, N, Vedyayev, A, Gusakova, D, Buda-Prejbeanu, L D, Chshiev, M, Amara, S, Vaysset, A, Dieny, B

“…Charge- and spin-diffusion equations, taking into account spin-diffusion and spin-transfer torque, were numerically solved using a finite element method in…”
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Magnetic domain walls: from physics to devices by Raymenants, E., Wan, D., Couet, S., Canvel, Y., Thiam, A., Tsvetanova, D., Souriau, L., Asselberghs, I., Carpenter, R., Jossart, N., Manfrini, M., Vaysset, A., Bultynck, O., Van Beek, S., Heyns, M., Nikonov, D.E., Young, I.A., Ghosh, S., Vila, L., Garello, K., Pizzini, S., Nguyen, V.D., Radu, I.P.

“…Electrical manipulation of magnetic domain walls (DWs) offers a novel way to process and store information for computation. DW devices are thus considered as…”
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Spintronic majority gates by Radu, I. P., Zografos, O., Vaysset, A., Ciubotaru, F., Yan, J., Swerts, J., Radisic, D., Briggs, B., Soree, B., Manfrini, M., Ercken, M., Wilson, C., Raghavan, P., Sayan, S., Adelmann, C., Thean, A., Amaru, L., Gaillardon, P.-E, De Micheli, G., Nikonov, D. E., Manipatruni, S., Young, I. A.

“…In this paper we present an overview of two types of majority gate devices based on spintronic phenomena. We compare the spin torque majority gate and the spin…”
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Overview of spin-based majority gates and interconnect implications by Radu, I. P., Zografos, O., Vaysset, A., Ciubotaru, F., Manfrini, M., Raghavan, P., Sayan, S., Adelmann, C., Tokei, Zs, Thean, A.

“…In this paper we review majority gate devices based on spintronic phenomena. We focus the discussion on spin wave majority gates and report on benchmarking and…”
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Improved coherence of ultrafast spin-transfer-driven precessional switching with synthetic antiferromagnet perpendicular polarizer by Vaysset, A., Papusoi, C., Buda-Prejbeanu, L. D., Bandiera, S., Marins de Castro, M., Dahmane, Y., Toussaint, J.-C., Ebels, U., Auffret, S., Sousa, R., Vila, L., Dieny, B.

“…The coherence of the precessional switching was compared in planar spin-valves comprising either an additional simple perpendicular polarizer or a synthetic…”
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Scaled spintronic logic device based on domain wall motion in magnetically interconnected tunnel junctions by Raymenants, E., Wan, D., Couet, S., Zografos, O., Nguyen, V.D., Vaysset, A., Souriau, L., Thiam, A., Manfrini, M., Brus, S., Heyns, M., Mocuta, D., Nikonov, D.E., Manipatruni, S., Young, I. A., Devolder, T., Radu, I. P.

“…We present a scaled device based on magnetic domain wall (DW) transport for logic applications. The device consists of multiple magnetic tunnel junctions…”
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Top-pinned STT-MRAM devices with high thermal stability hybrid freelayers for high densitymemory applications by Liu, E., Swerts, J., Vaysset, A., Wu, Y., Couet, S., Mertens, S., Rao, S., Kim, W., Van Elshocht, S., De Boeck, J., Kar, G.S.

“…New free layer (FL) 1naterials and designs have recently drawn a lot of interest as the devices of spin-transfer-torque magnetic random access memory…”
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Control of interlayer exchange coupling and its impact on spin-torque switching of hybrid free layers with perpendicular magnetic anisotropy by Liu, E., Swerts, J., Vaysset, A., Devolder, T., Couet, S., Mertens, S., Lin, T., van Elshocht, S., De Boeck, J., Kar, G. S.

“…Magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy (PMA) have recently been studied for the scaling-down of spin-transfer-torque magnetic…”
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Finite Element Modeling of Charge and Spin-currents in Magnetoresistive Pillars with Current Crowding Effects by Strelkov, N, Vedyayev, A, Gusakova, D, Buda-Prejbeanu, L. D, Chshiev, M, Amara, S, Vaysset, A, Dieny, B

“…IEEE Magnetics Letters 1, 3000304 (2010) The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved…”
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