Search Results - "Vassilevski, K. V."

Device processing and characterisation of high temperature silicon carbide Schottky diodes by Vassilevski, K.V., Nikitina, I.P., Wright, N.G., Horsfall, A.B., O’Neill, A.G., Johnson, C.M.

“…High temperature silicon carbide diodes with nickel silicide Schottky contacts were fabricated by deposition of titanium–nickel metal film on 4H-SiC epitaxial…”
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Determination of the adhesion energy of graphene on SiC(0001) via measurement of pleat defects by Wells, G. H., Hopf, T., Vassilevski, K. V., Escobedo-Cousin, E., Wright, N. G., Horsfall, A. B., Goss, J. P., O'Neill, A. G., Hunt, M. R. C.

“…Pleat defects in graphene grown on SiC(0001) were studied and used to determine the adhesion energy between few-layer graphene (3 ± 1 monolayers) and the…”
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Optimisation of a 4H-SiC enhancement mode power JFET for high temperature operation by Bhatnagar, P., Horsfall, A.B., Wright, N.G., Johnson, C.M., Vassilevski, K.V., O’Neill, A.G.

“…We present the optimization of an enhancement mode vertical channel junction field effect transistor (VJFET), by investigating the variation of the controlled…”
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4H-SiC rectifiers with dual metal planar Schottky contacts by Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G.

“…4H-SiC rectifiers with dual metal planar (DMP) Schottky contacts have been fabricated with a main titanium and an annular nickel contact. Fabricated diodes…”
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Study of annealing conditions on the formation of ohmic contacts on p+ 4H–SiC layers grown by CVD and LPE by Vassilevski, K.V, Constantinidis, G, Papanicolaou, N, Martin, N, Zekentes, K

“…The quality of Al/Ti-based ohmic contacts formed on 4H–SiC films under various annealing conditions has been examined. Atmospheric, vacuum and high vacuum…”
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High temperature vibration energy harvester system by Barker, S, Vassilevski, K V, Wright, N G, Horsfall, A B

“…This work presents the first demonstration of a high temperature piezoelectric energy harvester system, capable of operation up to 300°C. The system comprises…”
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GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers by Nikolaev, A. E., Rendakova, S. V., Nikitina, I. P., Vassilevski, K. V., Dmitriev, V. A.

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Microwave p-i-n diodes and switches based on 4H-SiC by Camara, N., Zekentes, K., Romanov, L.P., Kirillov, A.V., Boltovets, M.S., Vassilevski, K.V., Haddad, G.

“…The 4H-SiC p-i-n diodes were designed, fabricated, and characterized for use in microwave applications. The diodes with mesa structure diameters between 80 and…”
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Experimental determination of electron drift velocity in 4H-SiC p +-n-n+ avalanche diodes by Vassilevski, K.V, Zekentes, K, Zorenko, A.V, Romanov, L.P

“…4H-SiC p( )-n-n( ) diodes of low series resistivity ( < 1x10(-4) Omicron.;cm(2)) were fabricated and packaged. The diodes exhibited homogeneous avalanche…”
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4H-SiC Schottky diode arrays for X-ray detection by Lioliou, G., Chan, H.K., Gohil, T., Vassilevski, K.V., Wright, N.G., Horsfall, A.B., Barnett, A.M.

“…Five SiC Schottky photodiodes for X-ray detection have been electrically characterized at room temperature. One representative diode was also electrically…”
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Silicon carbide based instrumentation amplifiers for extreme applications by Chan, H. K., Wood, N. G., Vassilevski, K. V., Wright, N. G., Peters, A., Horsfall, A. B.

“…While instrumentation amplifiers based on silicon technology have revolutionized our understanding of the world in which we live, they are limited to operating…”
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Semi-transparent SiC Schottky diodes for X-ray spectroscopy by Lees, J.E., Bassford, D.J., Fraser, G.W., Horsfall, A.B., Vassilevski, K.V., Wright, N.G., Owens, A.

“…We describe a novel SiC Schottky diode architecture. The semi-transparent SiC Schottky diode has an “ultra-thin” (18 nm Ni/Ti) Schottky contact, a gold annular…”
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Ti/Ni ohmic contacts to n-type gallium nitride by Vassilevski, K.V., Rastegaeva, M.G., Babanin, A.I., Nikitina, I.P., Dmitriev, V.A.

“…We investigated Ti and Ni based contacts to find a metallization which is convenient for a self aligned technology such that the ohmic contact can be used as a…”
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Novel SiC self starting DC-DC converter for high temperature wireless sensor nodes by Brennan, D. R., Mostaghimi, O., Vassilevski, K. V., Wright, N. G., Horsfall, A. B.

“…We report on the first demonstration of a novel self starting DC-DC converter to supply power to a wireless sensor node for deployment in high temperature…”
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SiC gas sensor arrays for extreme environments by Roy, S. K., Furnival, B. J. D., Wood, N. G., Vassilevski, K. V., Wright, N. G., Horsfall, A. B., O'Malley, C. J.

“…For the first time SiC-based gas sensor arrays have been demonstrated, which are capable of discriminating gas species under harsh environments. The structures…”
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CMOS compatible gas sensor arrays for hostile environments by Furnival, B. J. D., Roy, S. K., Vassilevski, K. V., Wright, N. G., Horsfall, A. B., O'Malley, C. J.

“…This study demonstrates the first SiC-based gas sensor array, which is compatible with CMOS processing and capable of discriminating between the constituents…”
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On the Way to the Silicon Carbide IMPATT by Vassilevski, K. V., Dmitriev, V. A., Zorenko, A. V.

“…An analysis of current situation in silicon carbide R&D shows that it is most real to fabricate SIC IMPATT diode on an epitaxial pn structure grown on the…”
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4H-SiC PIN diodes for microwave applications by Zekentes, K., Camara, N., Romanov, L., Kirillov, A., Boltovets, M.S., Lebedev, A., Vassilevski, K.V.

“…4H-SiC p-i-n diodes were designed, fabricated and characterized with the aim to be used for microwave applications. The best diodes with mesa structure…”
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Experimental determination of electron drift velocity in 4H-SiC p super(+)-n-n super(+) avalanche diodes by Vassilevski, Konstantin V, Zekentes, Konstantinos, Zorenko, Alexander V, Romanov, Leonid P

“…4H-SiC p super(+)-n-n super(+) diodes of low series resistivity ( < 1x10 super(-4) Omega times cm super(2)) were fabricated and packaged. The diodes exhibited…”
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