Search Results - "Vasilev, A.P"

Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states by Firsov, D. A., Shalygin, V. A., Panevin, V. Yu, Melentyev, G. A., Sofronov, A. N., Vorobjev, L. E., Andrianov, A. V., Zakhar’in, A. O., Mikhrin, V. S., Vasil’ev, A. P., Zhukov, A. E., Gavrilenko, L. V., Gavrilenko, V. I., Antonov, A. V., Aleshkin, V. Ya

“…Terahertz emission spectra in a longitudinal electric field and lateral photoconductivity spectra under terahertz illumination have been studied in structures…”
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Terahertz photoluminescence of the donor doped GaAs/AlGaAs quantum wells controlled by the near-infrared stimulated emission by Makhov, I.S., Panevin, V.Yu, Firsov, D.A., Vorobjev, L.E., Vasil'ev, A.P., Maleev, N.A.

“…The low-temperature terahertz and near-infrared photoluminescence from the near-infrared laser nanostructure with GaAs/AlGaAs quantum wells doped with shallow…”
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Simulation of electron transport in GaAS/AIAs superlattices with a small number of periods for the THz frequency range by Pavelyev, D.G, Vasilev, A.P, Kozlov, V.A, Koschurinov, Yu.I, Obolenskaya, E.S, Obolensky, S.V, Ustinov, V.M

“…The electron transport in superlattices based on GaAs/AlAs heterostructures with a small number of periods (6 periods) is calculated by the Monte Carlo method…”
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Emission-Line Width and [alpha]-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells by Blokhin, S.A, Bobrov, M.A, Blokhin, A.A, Kuzmenkov, A.G, Vasilev, A.P, Zadiranov, Yu.M, Evropeytsev, E.A, Sakharov, A.V, Ledentsov, N.N, Karachinsky, L.Ya, Ospennikov, A.M, Maleev, N.A, Ustinov, V.M

“…The emission-line width for 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells is studied. The width of the…”
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Optimization of the superlattice parameters for THz diodes by Pavelyev, D. G., Vasilev, A. P., Kozlov, V. A., Obolenskaya, E. S., Obolensky, S. V., Ustinov, V. M.

“…Previously, GaAs/AlAs superlattices with a small active area (~1 μm 2 ) were used by us to design mixer diodes. It was established that these superlattices can…”
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The effect of stimulated interband emission on the impurity-assisted far-infrared photoluminescence in GaAs/AlGaAs quantum wells by Makhov, I.S., Panevin, V.Yu, Sofronov, A.N., Firsov, D.A., Vorobjev, L.E., Vinnichenko, M.Ya, Vasil'ev, A.P., Maleev, N.A.

“…Emission of far- and near-infrared radiations in the n-GaAs/AlGaAs quantum well nanostructures under interband photoexcitation of electron-hole pairs is…”
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Optical Properties of AlGaAs/GaAs Resonant Bragg Structure at the Second Quantum State by Chaldyshev, V. V., Kundelev, E. V., Poddubny, A. N., Vasil’ev, A. P., Yagovkina, M. A., Chend, Y., Maharjan, N., Liu, Z., Nakarmi, M. L., Shakya, N. M.

“…Photoluminescence, optical reflectance and electro-reflectance spectroscopies were employed to study an AlGaAs/GaAs multiple-quantum-well based resonant Bragg…”
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Technologies for Safing the Semipalatinsk Test Site by Gorin, N. V., Krasnosel’skikh, M. V., Smirnov, V. G., Vasil’ev, A. P., Andreyuk, A. N., Burenkov, S. V., Kutsenko, V. M.

“…Technologies for bringing the Semipalatinsk test site into a safe state as implemented by VNIITF jointly with the VNIIEF, Radium Institute, NIKIET, and the…”
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Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping by Firsov, D. A., Vorobjev, L. E., Panevin, V. Yu, Sofronov, A. N., Balagula, R. M., Makhov, I. S., Kozlov, D. V., Vasil’ev, A. P.

“…Radiation in the terahertz (THz) spectral range from structures with GaAs/AlGaAs doped quantum wells is investigated under conditions of the interband optical…”
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Emission spectra of a laser based on an InAs/GaAs quantum-dot superlattice by Sobolev, M.M, Buyalo, M.S, Nevedomskiy, V.N, Zadiranov, Yu. M, Zolotareva, R.V, Vasil'ev, A.P, Ustinov, V.M, Portnoi, E.L

“…The spectral characteristics of a laser with an active region based on a ten-layer system of In(Ga)As/GaAs vertically correlated quantum dots with 4.5-nm GaAs…”
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InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain by Kovsh, A.R., Maleev, N.A., Zhukov, A.E., Mikhrin, S.S., Vasil’ev, A.P., Semenova, E.A., Shernyakov, Yu.M., Maximov, M.V., Livshits, D.A., Ustinov, V.M., Ledentsov, N.N., Bimberg, D., Alferov, Zh.I.

“…Near-1.3-μm lasers based on multiple layers (2, 5 and 10) of InAs/InGaAs/GaAs quantum dots with high performance have been grown by molecular beam epitaxy. A…”
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Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture by Bobrov, M. A., Maleev, N. A., Blokhin, S. A., Kuzmenkov, A. G., Vasil’ev, A. P., Blokhin, A. A., Guseva, Yu. A., Kulagina, M. M., Zadiranov, Yu. M., Troshkov, S. I., Lysak, V., Ustinov, V. M.

“…The polarization characteristics of 850-nm vertical-cavity surface-emitting lasers (VCSELs) with intracavity contacts and a rhomboidal oxide current aperture…”
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An [.sub.60] resonant Bragg structure based on the second quantum-confinement level of heavy-hole excitons in quantum wells by Chaldyshev, V.V, Sholohov, D.E, Vasil'ev, A.P

“…Photoluminescence and optical-reflection spectra of a periodic structure consisting of 60 tunneling-isolated GaAs quantum wells separated by AlGaAs barriers…”
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Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR by Maleev, N. A., Kuz’menkov, A. G., Kulagina, M. M., Zadiranov, Yu. M., Vasil’ev, A. P., Blokhin, S. A., Shulenkov, A. S., Troshkov, S. I., Gladyshev, A. G., Nadtochiy, A. M., Pavlov, M. M., Bobrov, M. A., Nazaruk, D. E., Ustinov, V. M.

“…Single-spatial-mode semiconductor vertical-cavity surface-emitting lasers (VCSELs) with a non-planar upper (output) dielectric distributed Bragg reflector…”
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Wannier-Stark states in a superlattice of InAs/GaAs quantum dots by Sobolev, M. M., Vasil’ev, A. P., Nevedomskii, V. N.

“…Electron and hole emission from states of a ten-layer system of tunneling-coupled vertically correlated InAs/GaAs quantum dots (QDs) is studied experimentally…”
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Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots by Sobolev, M. M., Gadzhiyev, I. M., Buyalo, M. S., Nevedomskiy, V. N., Zadiranov, Yu. M., Zolotareva, R. V., Vasil’ev, A. P., Ustinov, V. M.

“…The polarization anisotropy of electroluminescence and absorption in a ten-layer system of vertically correlated InAs quantum dots separated by 8.6-nm-thick…”
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Noise performance of 89Xnm single-mode VCSELs by Bobrov, M.A., Blokhin, S.A., Kovach, Ya.N., Blokhin, A.A., Maleev, N.A., Kuzmenkov, A.G., Zadiranov, Yu.M., Kulagina, M.M., Guseva, Yu.A., Vasil'Ev, A.P., Marchii, M.N., Ustinov, V.M.

“…The study of the noise characteristics of the 89X nm single-mode polarization-stable VCSELs based on InGaAs quantum wells is presented. When VCSEL emission is…”
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Optical anisotropy of InGaAs quantum dots by Blokhin, S. A., Nadtochiy, A. M., Krasivichev, A. A., Karachinsky, L. Ya, Vasil’ev, A. P., Nevedomskiy, V. N., Maximov, M. V., Cirlin, G. E., Buravlev, A. D., Maleev, N. A., Zhukov, A. E., Ledentsov, N. N., Ustinov, V. M.

“…Polarization studies of InGaAs/GaAs quantum dots (QDs) synthesized in the submonolayer deposition mode (SMLQDs) on a singular GaAs (100) surface are carried…”
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Polarization dependence of Fano resonances in impurity photoconductivity of quantum wells doped with shallow donors by Aleshkin, V. Ya, Antonov, A. V., Zholudev, M. S., Panevin, V. Yu, Vorob’ev, L. E., Firsov, D. A., Vasil’ev, A. P., Zhukov, A. E.

“…The spectrum of impurity photoabsorption of a heterostructure with quantum wells doped with shallow donors has been calculated in the energy range close to the…”
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Tamm plasmon-polaritons: First experimental observation by Sasin, M.E., Seisyan, R.P., Kaliteevski, M.A., Brand, S., Abram, R.A., Chamberlain, J.M., Iorsh, I.V., Shelykh, I.A., Egorov, A.Yu, Vasil’ev, A.P., Mikhrin, V.S., Kavokin, A.V.

“…We report on the first experimental observation of Tamm plasmon-polaritons (TPP) formed at the interface between a metal and a dielectric Bragg reflector…”
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