Search Results - "Vasileuski, Y.G."
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High-Power InGaAs/InP Partially Depleted Absorber Photodiodes for Microwave Generation
Published in Journal of lightwave technology (2008)“…A 2-D fully coupled electrothermal physical model of a p-i-n photodiode, which takes into account external electric circuit, has been developed. Based on…”
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Journal Article -
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2D simulation of planar InP/InGaAs avalanche photodiode with no guard rings
Published in 2008 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) (01-09-2008)“…Numerical simulation of a guardring-free planar InP/InGaAs avalanche photodiode is presented. The device incorporates p- and n- charge sheets, which spatially…”
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Conference Proceeding
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3
Numerical Simulation of Guardring-Free Planar InP/InGaAs Avalanche Photodiode
Published in EUROCON 2007 - The International Conference on "Computer as a Tool" (01-09-2007)“…Theoretical analysis of guardring-free planar InP/InGaAs avalanche photodiode with additional decoupling p-charge sheet based on 2-D drift-diffusion simulation…”
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Conference Proceeding -
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Mixed device/circuit model of the high-speed p-i-n photodiode
Published in NUSOD '05. Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices, 2005 (2005)“…The mixed device/circuit model of the p-i-n photodiode based on 2-D drift-diffusion scheme of charge carrier transport in semiconductor heterostructures and…”
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Conference Proceeding