Search Results - "Vasil'evskii, I. S."

Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer by Galiev, G.B., Vasil'evskii, I.S., Pushkarev, S.S., Klimov, Е.А., Imamov, R.M., Buffat, P.A., Dwir, B., Suvorova, Е.I.

“…Metamorphic InхAl1−хAs buffer design features influence on electrophysical and structural properties of the heterostructures was investigated. Two types of…”
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Contact Potential Difference in the Absence of a Current through a Sample in the Quantum Hall Effect Regime in InGaAs/InAlAs Heterostructure by Gudina, S. V., Neverov, V. N., Turutkin, K. V., Vasil’evskii, I. S., Vinichenko, A. N.

“…The paper presents experimental results of the appearance of a voltage at the potential contacts in the absence of an external current through a sample in the…”
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Anomalous Photoresponse of Heavily Doped GaAs/AlAs Superlattices with Electric Domains by Altukhov, I. V., Dizhur, S. E., Kagan, M. S., Khvalkovskiy, N. A., Paprotskiy, S. K., Vasil’evskii, I. S., Vinichenko, A. N.

“…— The strong effect of weak interband illumination on tunneling transport in doped GaAs/AlAs superlattices was found under conditions of electric domain…”
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Modelling of Quantum-confined Stark Effect in III-V Heterostructures for Electro-optic Modulator Applications by Sibirmovsky, Y. D., Kargin, N. I., Vasil'evskii, I. S.

“…The problem of modelling the absorption coefficient and refractive index spectra of III-V heterostructures with multiple quantum wells and superlattices under…”
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Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping by Safonov, D. A., Vinichenko, A. N., Kargin, N. I., Vasil’evskii, I. S.

“…The influence of the concentration of δ doping with Si on the electron transport properties of Al 0.25 Ga 0.75 As/In 0.2 Ga 0.8 As/GaAs pseudomorphic quantum…”
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Structural Properties of {LTG-GaAs/GaAs:Si} Superlattices on GaAs(100) and (111)A Substrates by Galiev, G B, Klimov, E A, Pushkarev, S S, Saraykin, V V, Vasil’evskii I S, Vinichenko, A N, Grekhov, M M, Klochkov, A N

“…A new structure for photoconductive antennas is proposed, which represents a multilayer epitaxial film grown on a GaAs(111)A substrate and consisting of…”
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Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz by Khabibullin, R. A., Shchavruk, N. V., Ponomarev, D. S., Ushakov, D. V., Afonenko, A. A., Vasil’evskii, I. S., Zaycev, A. A., Danilov, A. I., Volkov, O. Yu, Pavlovskiy, V. V., Maremyanin, K. V., Gavrilenko, V. I.

“…The active region of a THz (terahertz) quantum-cascade laser based on three tunnel-coupled GaAs/Al 0.15 Ga 0.85 As quantum wells with a resonance-phonon…”
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Electron-Quantum Transport in Pseudomorphic and Metamorphic In0.2Ga0.8As-Based Quantum Wells by Vinichenko, A. N., Safonov, D. A., Kargin, N. I., Vasil’evskii, I. S.

“…Metamorphic high-electron-mobility transistor (HEMT) structures based on deep In 0.2 Ga 0.8 As/In 0.2 Al 0.8 As quantum wells (0.7 eV for Γ electrons) with…”
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THz Radiation of Photoconductive Antennas based on {LT-GaAa/GaAa:Si} Superlattice Structures by Klochkov, A. N., Klimov, E. A., Solyankin, P. M., Konnikova, M. R., Vasil’evskii, I. S., Vinichenko, A. N., Shkurinov, A. P., Galiev, G. B.

“…A material in the form of a multilayer structure based on low-temperature LT-GaAs grown on (111)A-oriented substrates is proposed for fabrication of THz…”
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3.3 THz Quantum Cascade Laser Based on a Three GaAs/AlGaAs Quantum-Well Active Module with an Operating Temperature above 120 K by Khabibullin, R. A., Maremyanin, K. V., Ponomarev, D. S., Galiev, R. R., Zaycev, A. A., Danilov, A. I., Vasil’evskii, I. S., Vinichenko, A. N., Klochkov, A. N., Afonenko, A. A., Ushakov, D. V., Morozov, S. V., Gavrilenko, V. I.

“…— The design of a terahertz (THz) quantum cascade laser (QCL) with an active module based on three GaAs/Al 0.18 Ga 0.82 As quantum wells for high-temperature…”
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Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates by Galiev, G. B., Vasiliev, A. L., Vasil’evskii, I. S., Vinichenko, A. N., Klimov, E. A., Klochkov, A. N., Trunkin, I. N., Pushkarev, S. S.

“…The structural characteristics of {InGaAs/InAlAs} superlattices, grown by molecular-beam epitaxy (MBE) at a temperature of 200°C on InP substrates with the…”
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Peculiarities of Silicon-Donor Ionization and Electron Scattering in Pseudomorphous AlGaAs/InGaAs/GaAs Quantum Wells with Heavy Unilateral Delta-Doping by Safonov, D. A., Vinichenko, A. N., Kargin, N. I., Vasil’evskii, I. S.

“…The influence of the concentration of silicon donors on the electron-transport properties of pseudomorphous Al 0.25 Ga 0.75 As/In 0.2 Ga 0.8 As/GaAs quantum…”
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New Structure for Photoconductive Antennas Based on {LTG-GaAs/GaAs:Si} Superlattice on GaAs(111)A Substrate by Galiev, G. B., Trunkin, I. N., Vasiliev, A. L., Vasil’evskii, I. S., Vinichenko, A. N., Klimov, E. A., Klochkov, A. N., Maltsev, P. P., Pushkarev, S. S.

“…The structural characteristics of a new structure for photoconductive antennas have been investigated. This structure is a multilayered epitaxial film grown on…”
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Pulsed laser modification of layered B-C and mixed BCx films on sapphire substrate by Fominski, V.Yu, Romanov, R.I., Vasil'evskii, I.S., Safonov, D.A., Soloviev, A.A., Ivanov, A.A., Zinin, P.V., Krasnoborodko, S.Yu, Vysokikh, Yu.E., Filonenko, V.P.

“…The effect of pulsed laser annealing (PLA, i.e., action of nanosecond laser pulses in air atmosphere) on surface morphology, structure, chemical state, and…”
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Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates by Galiev, G. B., Pushkarev, S. S., Buriakov, A. M., Bilyk, V. R., Mishina, E. D., Klimov, E. A., Vasil’evskii, I. S., Maltsev, P. P.

“…The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and…”
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Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures by Gudina, S. V., Arapov, Yu. G., Ilchenko, E. I., Neverov, V. N., Savelyev, A. P., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V., Vasil’evskii, I. S., Vinichenko, A. N.

“…The longitudinal ρ xx and Hall ρ xy resistances were measured in the region of the quantum phase transitions for the quantum Hall effect regime with magnetic…”
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Features of Pulsed Laser Annealing of BC3 Films on a Sapphire Substrate by Fominski, V. Yu, Romanov, R. I., Solov’ev, A. A., Vasil’evskii, I. S., Safonov, D. A., Ivanov, A. A., Zinin, P. V., Filonenko, V. P.

“…The morphology, chemical composition, microstructure, and electrical properties of BC 3 thin films subjected to melting by a nanosecond laser pulse are…”
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Transport in Short-Period GaAs/AlAs Superlattices with Electric Domains by Altukhov, I. V., Dizhur, S. E., Kagan, M. S., Khvalkovskiy, N. A., Paprotskiy, S. K., Vasil’evskii, I. S., Vinichenko, A. N.

“…Electronic transport in short-period GaAs/AlAs superlattices with resonant cavities was studied at room temperature. The evolution of tunneling current at…”
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Effect of (100) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs by Galiev, G.B., Vasil'evskii, I.S., Klimov, E.А., Pushkarev, S.S., Klochkov, A.N., Maltsev, P.P, Presniakov, M.Yu, Trunkin, I.N., Vasiliev, A.L.

“…The effect of GaAs (100) substrate misorientation on metamorphic high electron mobility transistor nanoheterostructure In0.64Al0.3As/In0.7Ga0.3As properties…”
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The Influence of the Annealing Regime on the Properties of Terahertz Antennas Based on Low-Temperature-Grown Gallium Arsenide by Nomoev, S. A., Vasil’evskii, I. S., Vinichenko, A. N., Kozlovskii, K. I., Chistyakov, A. A., Mishina, E. D., Khusyainov, D. I., Buryakov, A. M.

“…Low-temperature gallium arsenide (LT-GaAs) films were grown by the method of molecularbeam epitaxy (MBE) at a reduced temperature (230°C) on GaAs(100)…”
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