Search Results - "Varghese, Arathy"

Fabrication of graphene–ZnO heterostructure-based flexible and thin platform-based UV detector by Kumar, Ashish, Varghese, Arathy, Janyani, Vijay

“…This work presents the performance evaluation of Graphene/ZnO Schottky junctions grown on flexible indium tin oxide (ITO)-coated polyethylene terephthalate…”
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Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications by Murugapandiyan, P., Mohanbabu, A., Rajya Lakshmi, V., Ramakrishnan, V.N., Varghese, Arathy, Wasim, MOHD, Baskaran, S., Saravana Kumar, R., Janakiraman, V.

“…We present a performance enhancement evaluation of n + doped graded InGaN drain/source region-based HfO2/InAlN/AlN/GaN/AlN on SiC metal-oxide-semiconductor…”
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Open-Gated GaN HEMT-Based pH Detectors Using Patterned Sensing Area by Varghese, Arathy, Eblabla, Abdalla, Elgaid, Khaled

“…This paper presents a pioneering study on the pH sensing performance of open gated GaN high-electron mobility transistors (HEMTs) with five different device…”
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Analytical Modeling and Simulation-Based Investigation of AlGaN/AlN/GaN Bio-HEMT Sensor for C-erbB-2 Detection by Varghese, Arathy, Periasamy, Chinnamuthan, Bhargava, Lava

“…Resolution of HEMT sensors needs to be improved to make feasible the precise detection of antigens from body fluids like saliva instead of blood. For enhancing…”
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Fabrication and Charge Deduction Based Sensitivity Analysis of GaN MOS-HEMT Device for Glucose, MIG, C-erbB-2, KIM-1, and PSA Detection by Varghese, Arathy, Periasamy, Chinnamuthan, Bhargava, Lava

“…This paper presents the applicability of a high-resolution AlGaN/AlN/GaN metal oxide semiconductor-high electron mobility transistor (MOS-HEMT) for multiple…”
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Junctionfree Gate Stacked Vertical TFET Hydrogen Sensor at Room Temperature by Ghosh, Sukanya, Rajan, Lintu, Varghese, Arathy

“…Presented through this work is an investigation of junctionfree gate-stacked (SiO 2 + high-k) double gated vertical tunnel field-effect transistor…”
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Modeling and Simulation of Ultrahigh Sensitive AlGaN/AlN/GaN HEMT-Based Hydrogen Gas Detector With Low Detection Limit by Varghese, Arathy, Eblabla, Abdalla, Elgaid, Khaled

“…Presented through this work is a steady state analytical model of the GaN HEMT based gas detector. GaN with high chemical and thermal stability provides…”
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Recent development and futuristic applications of MEMS based piezoelectric microphones by Kumar, Ashish, Varghese, Arathy, Sharma, Anup, Prasad, Mahanth, Janyani, Vijay, Yadav, R.P., Elgaid, Khaled

“…This paper presents a comprehensive literature survey of MEMS based piezoelectric microphones along with the fabrication processes involved, application…”
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Design and fabrication of AlGaN/GaN high electron mobility transistors for biosensing applications by Periasamy, Chinnamuthan, Varghese, Arathy

“…Developing and optimizing FET platforms for label free bio molecule detection has gained huge interest in recent years. This paper presents a charge control…”
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GaN-HEMT on Si as a Robust Visible-blind UV detector with High Responsivity by Varghese, Arathy, Eblabla, Abdalla, Wu, Zehao, Ghozati, Seyed Urman, Elgaid, Khaled

“…This work presents performance evaluation of GaN High Electron Mobility Transistor (HEMT) based ultraviolet (UV) detector on Si substrate. In addition to the…”
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A Complete Analytical Model for MOS-HEMT Biosensors: Capturing the Effect of Stern Layer and Charge Screening on Sensor Performance by Varghese, Arathy, Das, Pallabi, Tallur, Siddharth

“…This letter presents analytical and technology computer aided design models for analyzing the performance of biohigh-electron-mobility transistor (HEMT)…”
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Development of AlGaN/GaN MOSHEMT biosensors: State-of-the-art review and future directions by Kumar, Ashish, Paliwal, Swati, Kalra, Dheeraj, Varghese, Arathy, Tripathy, Sudhiranjan, Ghoshal, S.K.

“…This article provides a comprehensive overview is of AlGaN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) based state of the art…”
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AlGaN/GaN HEMT Based pH Detection Using Atomic Layer Deposition of Al 2 O 3 as Sensing Membrane and Passivation by Bhat, Aasif Mohammad, Periasamy, C., Poonia, Ritu, Varghese, Arathy, Shafi, Nawaz, Tripathy, Sudhiranjan

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Fabrication and Modeling-Based Performance Analysis of Circular GaN MOSHEMT-Based Electrochemical Sensors by Varghese, Arathy, Periasamy, Chinnamuthan, Bhargava, Lava, Dolmanan, Surani Bin, Tripathy, Sudhiranjan

“…C-MOSHEMT (Circular-Metal Oxide Semiconductor High Electron Mobility Transistor) has been modeled, fabricated and sensitivity analysis has been done for pH…”
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L G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation by Angamuthu, Revathy, ChettiaGoundar Sengodan, Boopathi, Anandan, Mohanbabu, Varghese, Arathy, Vakkalakula, Bharath Sreenivasulu

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AlGaN/GaN HEMT Based pH Detection Using Atomic Layer Deposition of Al2O3 as Sensing Membrane and Passivation by Bhat, Aasif Mohammad, Periasamy, C., Poonia, Ritu, Varghese, Arathy, Shafi, Nawaz, Tripathy, Sudhiranjan

“…Herein, we report the design and implementation of planar and circular aluminium gallium nitride/Gallium nitride high electron mobility transistor (AlGaN/GaN…”
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MEMS-based piezoresistive and capacitive microphones: A review on materials and methods by Kumar, Ashish, Varghese, Arathy, Kalra, Dheeraj, Raunak, Anshuman, Jaiverdhan, Prasad, Mahanth, Janyani, Vijay, Yadav, R.P.

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LG 55nm T‐gate InGaN/GaN channel based high electron mobility transistors for stable transconductance operation by Angamuthu, Revathy, Boopathi ChettiaGoundar Sengodan, Anandan, Mohanbabu, Varghese, Arathy, Bharath Sreenivasulu Vakkalakula

“…Nonlinearity operation and early gain suppression limit the high‐frequency operation of GaN‐HEMTs. Nonlinear transconductance and resistance drop‐off at…”
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LG 55 nm T‐gate InGaN/GaN channel based high electron mobility transistors for stable transconductance operation by Angamuthu, Revathy, ChettiaGoundar Sengodan, Boopathi, Anandan, Mohanbabu, Varghese, Arathy, Vakkalakula, Bharath Sreenivasulu

“…Nonlinearity operation and early gain suppression limit the high‐frequency operation of GaN‐HEMTs. Nonlinear transconductance and resistance drop‐off at…”
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Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer by Augustine Fletcher, A. S., Nirmal, D., Arivazhagan, L., Ajayan, J., Varghese, Arathy

“…The performance of AlGaN/GaN HEMT is enhanced by using discrete field plate (DFP) and AlGaN blocking layer. The AlGaN blocking layer provides an excellent…”
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