Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications

Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications

This paper proposes two different approaches to studying resistive switching of oxide thin films using scratching probe nanolithography of atomic force microscopy (AFM). These approaches allow us to assess the effects of memristor size and top-contact thickness on resistive switching. For that purpo...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Vol. 13; no. 10; p. 1583
Main Authors: Tominov, Roman V, Vakulov, Zakhar E, Avilov, Vadim I, Shikhovtsov, Ivan A, Varganov, Vadim I, Kazantsev, Victor B, Gupta, Lovi Raj, Prakash, Chander, Smirnov, Vladimir A
Format: Journal Article
Language:English
Published: Switzerland MDPI AG 09-05-2023
MDPI
Subjects:
Analysis
Artificial intelligence
Atomic force microscopy
Diameters
Dielectric films
Grooves
Identification and classification
Lasers
memristor
Memristors
Morphology
Nanolithography
neuromorphic systems
Oxides
Photoresists
Pinholes
ReRAM
resistive switching
Scratching
scratching probe nanolithography
Software
Statistical analysis
Switching
Taguchi methods
Taguchi methods (Quality control)
Thickness
Thin films
Variance analysis
Zinc oxide
Zinc oxides
Russia
United States > US
pulsed laser deposition
memristor
scratching probe nanolithography
ZnO thin films
ReRAM
neuromorphic systems
resistive switching
artificial intelligence
Taguchi method
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Summary:This paper proposes two different approaches to studying resistive switching of oxide thin films using scratching probe nanolithography of atomic force microscopy (AFM). These approaches allow us to assess the effects of memristor size and top-contact thickness on resistive switching. For that purpose, we investigated scratching probe nanolithography regimes using the Taguchi method, which is known as a reliable method for improving the reliability of the result. The AFM parameters, including normal load, scratch distance, probe speed, and probe direction, are optimized on the photoresist thin film by the Taguchi method. As a result, the pinholes with diameter ranged from 25.4 ± 2.2 nm to 85.1 ± 6.3 nm, and the groove array with a depth of 40.5 ± 3.7 nm and a roughness at the bottom of less than a few nanometers was formed. Then, based on the Si/TiN/ZnO/photoresist structures, we fabricated and investigated memristors with different spot sizes and TiN top contact thickness. As a result, the HRS/LRS ratio, U , and I are well controlled for a memristor size from 27 nm to 83 nm and ranged from ~8 to ~128, from 1.4 ± 0.1 V to 1.8 ± 0.2 V, and from (1.7 ± 0.2) × 10 A to (4.2 ± 0.6) × 10 A, respectively. Furthermore, the HRS/LRS ratio and U are well controlled at a TiN top contact thickness from 8.3 ± 1.1 nm to 32.4 ± 4.2 nm and ranged from ~22 to ~188 and from 1.15 ± 0.05 V to 1.62 ± 0.06 V, respectively. The results can be used in the engineering and manufacturing of memristive structures for neuromorphic applications of brain-inspired artificial intelligence systems.
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ISSN:2079-4991
2079-4991
DOI:10.3390/nano13101583