Search Results - "Varesi, Enrico"
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The potential of chemical bonding to design crystallization and vitrification kinetics
Published in Nature communications (17-08-2021)“…Controlling a state of material between its crystalline and glassy phase has fostered many real-world applications. Nevertheless, design rules for…”
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2
Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices
Published in Scientific reports (01-03-2016)“…The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural…”
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3
Effect of nitrogen doping on the thermal conductivity of GeTe thin films
Published in Physica status solidi. PSS-RRL. Rapid research letters (01-12-2013)“…The 3ω method was employed to determine the effect of nitrogen doping (5 at.%) on the thermal conductivity of sputtered thin films of stoichiometric GeTe (a…”
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4
The Design of Rewritable Ultrahigh Density Scanning-Probe Phase-Change Memories
Published in IEEE transactions on nanotechnology (01-07-2011)“…A systematic design of practicable media suitable for rewritable, ultrahigh density (>;1Tbit/sq.in.), high data rate (>;1Mbit/s/tip) scanning-probe…”
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5
Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells
Published in Journal of chemical and engineering data (11-06-2009)“…The thermal properties of the phase-change chalcogenide alloy Ge2Sb2Te5 in its three phases (amorphous, cubic, and hexagonal) and of Si3N4 and SiO2 have been…”
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Journal Article Conference Proceeding -
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Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories
Published in Solid-state electronics (01-04-2011)“…► The reported research is very attractive in order to enlarge the possible PCM application spectrum. ► The introduction of an increasing antimony (Sb)…”
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Overcoming Temperature Limitations in Phase Change Memories With Optimized GexSbyTez
Published in IEEE transactions on electron devices (01-12-2013)Get full text
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8
Hot-Wire Chemical Vapor Deposition of Chalcogenide Materials for Phase Change Memory Applications
Published in Chemistry of materials (10-06-2008)Get full text
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9
Thermal Stability of Ge2Sb2Te5 in Contact with Ti and TiN
Published in Journal of electronic materials (01-10-2009)“…The thermal stability of a Ge 2 Sb 2 Te 5 chalcogenide layer in contact with titanium and titanium nitride metallic thin films has been investigated mainly…”
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10
Overcoming Temperature Limitations in Phase Change Memories With Optimized
Published in IEEE transactions on electron devices (01-12-2013)“…Phase change memory (PCM) is the most mature among the novel memory concepts. Embedded PCM technology can be a real breakthrough for process cost saving and…”
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11
A simple statistical phenomenological model for cation substitutions in Nd1+xBa2-xCu3O7-d+x/2
Published in Philosophical magazine (Abingdon, England) (01-07-2008)“…In this article we present the first results of a quite simple phenomenological model we have developed to simulate the cationic substitutions in…”
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12
Thermal Stability of Ge^sub 2^Sb^sub 2^Te^sub 5^ in Contact with Ti and TiN
Published in Journal of electronic materials (01-10-2009)“…The thermal stability of a Ge^sub 2^Sb^sub 2^Te^sub 5^ chalcogenide layer in contact with titanium and titanium nitride metallic thin films has been…”
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Crystallization and Vitrification Kinetics by Design: The Role of Chemical Bonding
Published 26-02-2021“…Controlling a state of material between its crystalline and glassy phase has fostered many real-world applications. Nevertheless, design rules for…”
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Journal Article -
15
Insights into ultrafast Ge-Te bond dynamics in a phase-change superlattice
Published 26-05-2016“…Phys. Rev. B 94, 094310 (2016) A long-standing question for avant-grade data storage technology concerns the nature of the ultrafast photoinduced phase…”
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16
Modeling of Atomic Migration Phenomena in Phase Change Memory Devices
Published in 2015 IEEE International Memory Workshop (IMW) (01-05-2015)“…Atomic migration on Phase Change Memory devices with wall architecture has been experimentally investigated and a quantitative model including electrical,…”
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Conference Proceeding -
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Electrical and Thermal Behavior of Tellurium Poor GeSbTe Compounds for Phase Change Memory
Published in 2012 4th IEEE International Memory Workshop (01-05-2012)“…The phase change active material exploration represents an important stage in order to further strengthen the know-how on the Phase Change Memory (PCM)…”
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Conference Proceeding