Search Results - "Vangheluwe, R."

High rate (∼3 nm/s) deposition of dense silicon nitride films at low substrate temperatures (<150 °C) using the expanding thermal plasma and substrate biasing by van Assche, F.J.H., Kessels, W.M.M., Vangheluwe, R., Mischke, W.S., Evers, M., van de Sanden, M.C.M.

“…The deposition of amorphous silicon nitride (a-SiN x :H) films at high deposition rates (∼3 nm/s) and at low substrate temperatures (<150 °C) has been studied…”
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P-111: A Thin Film Encapsulation Stack for PLED and OLED Displays by Van Assche, F. J. H., Vangheluwe, R. T., Maes, J. W. C., Mischke, W. S., Bijker, M. D., Dings, F. C., Evers, M. F. J., Kessels, W. M. M., Van de Sanden, M. C. M.

“…For a thin film (< 1 μm) encapsulation stack consisting of only 3 plasma deposited silicon nitride layers separated by a thin (< 100 nm) organic layer, a water…”
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