Search Results - "Vanderhoef, Laura R."

Charge carrier relaxation processes in TbAs nanoinclusions in GaAs measured by optical-pump THz-probe transient absorption spectroscopy by Vanderhoef, Laura R., Azad, Abul K., Bomberger, Cory C., Chowdhury, Dibakar Roy, Chase, D. Bruce, Taylor, Antoinette J., Zide, Joshua M. O., Doty, Matthew F.

“…Rare-earth materials epitaxially codeposited with III-V semiconductors form small, spherical rare-earth-monopnictide nanoparticles embedded within the III-V…”
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Determining the band alignment of TbAs:GaAs and TbAs:In0.53Ga0.47As by Bomberger, Cory C., Vanderhoef, Laura R., Rahman, Abdur, Shah, Deesha, Chase, D. Bruce, Taylor, Antoinette J., Azad, Abul K., Doty, Matthew F., Zide, Joshua M. O.

“…We propose and systematically justify a band structure for TbAs nanoparticles in GaAs and In0.53Ga0.47As host matrices. Fluence-dependent optical-pump…”
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Determining the band alignment of TbAs:GaAs and TbAs:In{sub 0.53}Ga{sub 0.47}As by Bomberger, Cory C., Chase, D. Bruce, Zide, Joshua M. O., Vanderhoef, Laura R., Rahman, Abdur, Shah, Deesha, Taylor, Antoinette J., Azad, Abul K., Doty, Matthew F., Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716

“…We propose and systematically justify a band structure for TbAs nanoparticles in GaAs and In{sub 0.53}Ga{sub 0.47}As host matrices. Fluence-dependent…”
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Understanding charge carrier relaxation processes in terbium arsenide nanoparticles using transient absorption spectroscopy by Vanderhoef, Laura R

“…Erbium arsenide nanoparticles epitaxially grown within III-V semiconductors have been shown to improve the performance of devices for applications ranging from…”
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Charge carrier relaxation processes in TbAs nanoinclusions in GaAs measured by optical-pump THz-probe transient absorption spectroscopy by Vanderhoef, Laura R., Azad, Abul K., Bomberger, Cory C., Chowdhury, Dibakar Roy, Chase, D. Bruce, Taylor, Antoinette J., Zide, Joshua M. O., Doty, Matthew F.

“…By analyzing how carrier relaxation rates depend on pump fluence and sample temperature, we conclude that states of TbAs embedded in GaAs are saturable. This…”
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Understanding charge carrier relaxation processes in terbium arsenide nanoparticles using transient absorption spectroscopy by Vanderhoef, Laura R

“…Erbium arsenide nanoparticles epitaxially grown within III-V semiconductors have been shown to improve the performance of devices for applications ranging from…”
Get full text