Search Results - "Vandamme, E.P."

Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures by Vandamme, E.P., Schreurs, D.M.M.-P., Van Dinther, G.

“…In order to model the RF behavior of a device-under-test (DUT), e.g., active and passive devices, dedicated on-wafer test-structures are required. However,…”
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Critical discussion on unified 1/f noise models for MOSFETs by Vandamme, E.P., Vandamme, L.K.J.

“…Recently, unified noise models, like BSIM3, have been proposed in literature to describe the 1/f noise of n- and p-type MOSFETs in all operating regimes. These…”
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Elevated source/drain by sacrificial selective epitaxy for high performance deep submicron CMOS: Process window versus complexity by Augendre, E., Rooyackers, R., Caymax, M., Vandamme, E.P., De Keersgieter, A., Perello, C., Van Dievel, M., Pochet, S., Badenes, G.

“…The continuous downscaling of CMOS devices aims at cost reduction and performance improvement. Process development constantly faces new constraints and…”
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Modeling the subthreshold swing in MOSFET's by Vandamme, E.P., Jansen, P., Deferm, L.

“…This letter reports on the bias-dependence of the inverse subthreshold slope or subthreshold swing in MOSFET's. It is shown by calculations and verified by…”
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1/f noise and its coherence as a diagnostic tool for quality assessment of potentiometers by Vandamme, E.P., Vandamme, L.K.J.

“…The excess noise of different types of potentiometers has been investigated, and all showed a 1/f noise power-spectral density. Two types of conductive tracks…”
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Current crowding and its effect on 1/ f noise and third harmonic distortion – a case study for quality assessment of resistors by Vandamme, E.P., Vandamme, L.K.J.

“…In this paper, we discuss the impact of current crowding on 1/ f noise generation and third harmonic distortion in semiconductor devices. We propose a model…”
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Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model by Vandamme, E.P., Schreurs, D., van Dinther, C., Badenes, G., Deferm, L.

“…The improved RF performance of silicon-based technologies over the years and their potential use in telecommunication applications has increased the research…”
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Impact of silicon substrate, iron contamination and perimeter on saturation current and noise in n+p diodes by Vandamme, L.K.J, Vandamme, E.P, Dobbelsteen, J.J

“…In this article two different generations of silicon material from the early-eighties and the mid-nineties are compared. The impact of iron contamination and…”
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Impact of silicidation on the excess noise behaviour of mos transistors by Vandamme, E.P, Vandamme, L.K.J, Claeys, C, Simoen, E, Schreutelkamp, R.J

“…The excess noise behaviour of silicided and non-silicided p- and n-channel MOSTs, biased in the ohmic region, has been investigated. Only a minor difference in…”
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Diagnostics of the quality of MOSFETs by Vandamme, E.P., Vandamme, L.K.J.

“…The excess noise behaviour of silicided p-channel MOSFETs is investigated. Due to contact problems, generation-recombination noise spectra are observed…”
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Low frequency noise analysis as a diagnostic tool to assess the quality of 0.25μm Ti-silicided poly lines by Vandamme, E.P., De Wolf, I., Lauwers, A., Vandamme, L.K.J.

“…In this paper, do and low frequency noise measurement results on Ti-silicided poly lines are presented and analysed. Besides Raman scattering [1], low…”
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Use of Vectorial Large-Signal Measurements to Experimentally Evaluate Digital Circuits at Microwave Frequencies: Application to Inverters by Schreurs, D., Vandamme, E.P.

“…In this work, we characterise for the first time a digital circuit, and more specifically an inverter, by means of vectorial large-signal measurements. The…”
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Capabilities of Vectorial Large-Signal Measurements to Validate RF Large-Signal Device Models by Schreurs, D., Vandamme, E.P., Vandenberghe, S.

“…The trend towards system-on-chip realisation tightens the design specifications and consequently imposes high accuracy requirements on device models. This…”
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Impact of non-quasi-static effects on the high frequency small-signal behaviour of MOSFETs by Vandamme, E.P., Badenes, G.

“…In this paper, we investigate the impact of nonquasi-static (NQS) effects on the small-signal RF behaviour of MOSFETs. We observed that the transistor power…”
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5.5GHz LSNA MOSFET modeling for RF CMOS circuit design by Grabinski, W., Vandamme, E.P., Schreurs, D., Maeder, H., Pilloud, O., Mcandrew, C.C.

“…The recent trend towards integrating an entire transceiver, with all its RF/analog/DSP functions, on a single CMOS chip is a consequence of strong market…”
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Reliable extraction of RF figures-of-merit for MOSFETs by Vandamme, E.P., Schreurs, D., Nauwelaers, B., van Dinther, C., Badenes, G., Deferm, L.

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Accuracy assessment of the BSIM3v3 MOSFET compact model for large signal RF applications by Vandamme, E.P., Schreurs, D., Dinther, C.

“…The design of RF systems requires accurate models to describe both small signal and large signal RF analog behaviour of transistors. So far, compact models…”
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