Search Results - "Van de Mieroop, K."

Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability by Kaczer, B., Degraeve, R., Rasras, M., Van de Mieroop, K., Roussel, P.J., Groeseneken, G.

“…The influence of FET gate oxide breakdown on the performance of a ring oscillator circuit is studied using statistical tools, emission microscopy, and circuit…”
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Consistent model for short-channel nMOSFET after hard gate oxide breakdown by Kaczer, B., Degraeve, R., De Keersgieter, A., Van de Mieroop, K., Simons, V., Groeseneken, G.

“…Dissimilar post-hard-breakdown nMOSFET characteristics are consistently explained by the location of a constant-size breakdown path. Device simulations with…”
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Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study by Kaczer, B., Degraeve, R., Rasras, M., De Keersgieter, A., Van de Mieroop, K., Groeseneken, G.

“…A CMOS ring oscillator circuit is observed to operate even after a number of its FET's have undergone a hard gate oxide breakdown. The first breakdown is…”
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Consistent model for short-channel nMOSFET post-hard-breakdown characteristics by Kaczer, B., Degraeve, R., De Keersgieter, A., Van de Mieroop, K., Bearda, T., Groeseneken, G.

“…We show that dissimilar post-hard-breakdown nFET characteristics can be consistently explained by the location of a constant-size breakdown path. A physically…”
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