Search Results - "Van Tuyen, Vo"

3-D low-loss coplanar waveguide transmission lines in multilayer MMICs by Van Tuyen Vo, Krishnamurthy, L., Qing Sun, Rezazadeh, A.A.

“…Newly developed transmission-line structures using the great flexibility of three-dimensional multilayer technology have been designed and fabricated. In this…”
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Optimization and Realization of Planar Isolated GaAs Zero-Biased Planar Doped Barrier Diodes for Microwave/Millimeter-Wave Power Detectors/Sensors by Vo, V.T., Hu, Z.

“…A high tangential signal sensitivity (TSS) zero-bias GaAs planar doped barrier (PDB) diode for microwave and millimeter-wave power detection applications is…”
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DC isolation and RF dissipation loss of coplanar waveguide on GaAs multi conductive layers bombarded by H+ and Fe+ ions by ZHIRUN HU, VAN TUYEN VO, REZAZADEH, Ali A

“…This letter explores the dc isolation and radio frequency (RF) dissipation loss of coplanar waveguide (CPW) lines of H/+/ and Fe/+/ ion bombarded GaAs multi…”
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Linear Temperature Dependent Small Signal Model for InGaP/GaAs DHBTs Using IC-CAP by Chitrashekaraiah, S., Van Tuyen Vo, Rezazadeh, A.A.

“…This paper presents extensive measurements and extractions carried out on InGaP/GaAs double heterojunction bipolar transistors to achieve a simple linear…”
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Anomalous temperature dependence of series resistance in Ag\Si and Al\Si Schottky junctions by Horváth, Zs J, Ádám, M, Pintér, I, Cvikl, B, Korošak, D, Mrdjen, T, Tuyen, Vo Van, Makaró, Zs, Dücsö, Cs, Bársony, I

“…Recently high temperature dependence of series resistance was obtained in Ag\n-Si and Al\n-Si\p-Si Schottky junctions prepared by ionised cluster beam…”
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Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures by HORVATH, Zs. J, DOZSA, L, VO VAN TUYEN, PÖDÖR, B, NEMCSICS, A, FRIGERI, P, GOMBIA, E, MOSCA, R, FRANCHI, S

“…The electrical characteristics of InAs quantum dot (QDot) and quantum well (QW) structures embedded in GaAs confining layers were compared using…”
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GaAs planar doped barrier diodes by Szentpáli, B., Van Tuyen, Vo, Constantinidis, G., Lagadas, M.

“…The planar doped barrier diodes are majority carrier devices with technologically controlled barrier height. This paper reviews the main current conducting…”
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Engineered Schottky barriers on n-In0.35Ga0.65As by HORVATH, Zs. J, VO VAN TUYEN, FRANCHI, S, BOSACCHI, A, FRIGERI, P, GOMBIA, E, MOSCA, R, PAL, D, KALMAR, I, SZENTPALI, B

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Investigation of electrical properties of Au/porous Si/Si structures by ADAM, M, HORVATH, Z. J, BARSONY, I, SZÖLGYEMY, L, VAZSONYI, E, VO VAN TUYEN

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Electrical and photoelectrical behaviour of CdTe structures by Horváth, Zs.J., Makhniy, V.P., Demych, M.V., Van Tuyen, Vo, Balázs, J, Réti, I., Gorley, P.M., Ulyanitsky, K.S., Horley, P.P., Stifter, D., Sitter, H., Dózsa, L.

“…The electrical and photoelectrical behaviour of Au/n-CdTe junctions prepared on CdTe monocrystalline substrates and CdTe epitaxial layers grown on n + GaAs…”
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Modification of Al/Si interface and Schottky barrier height with chemical treatment by Horváth, Zs.J., Ádám, M., Szabó, I., Serényi, M., Van Tuyen, Vo

“…The influence of different chemical treatments on the electrical behaviour of n- and p-type Al/Si Schottky junctions was studied. A Schottky barrier height of…”
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High tangential signal sensitivity GaAs planar doped barrier diodes for microwave/millimeter-wave power detector applications by Zhirun Hu, Vo, V.T., Rezazadeh, A.A.

“…Tangential signal sensitivity (TSS) of GaAs planar doped barrier (PDB) detector diodes as low as -55 dBm at 35 GHz has been achieved. In comparison with that…”
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Miniature CPW Inductors for 3-D MMICs by Vo, Van Tuyen, Krishnamurthy, Lokesh, Sun, Qing, Rezazadeh, Ali A.

“…Newly developed miniaturized CPW inductors using the great flexibility of three-dimensional multilayer technology have been designed and fabricated. Their…”
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Electrical peculiarities in Al/Si/Ge/…/Ge/Si and Al/SiGe/Si structures by Horváth, Zs.J., Jarrendähl, K., Ádám, M., Szabó, I., Van Tuyen, Vo, Czigány, Zs

“…The current–voltage ( I– V) and capacitance–voltage ( C– V) behaviour of different Si/Ge multilayers and SiGe single layers prepared on p-type Si substrates by…”
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Current instabilities in GaAs/InAs self-aggregated quantum dot structures by Horváth, Zs.J., Frigeri, P., Franchi, S., Van Tuyen, Vo, Gombia, E., Mosca, R., Dózsa, L.

“…Excess current was obtained in GaAs/InAs quantum dot structures at low temperatures and low current levels. This excess current exhibited instabilities with…”
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Comment on ‘‘Influence of barrier height distribution on the parameters of Schottky diodes’’ [Appl. Phys. Lett. 65 , 575 (1994)] by Horváth, Zs. J., Van Tuyen, Vo

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Engineered Schottky barriers on n-In 0.35Ga 0.65As by Horváth, Zs.J., Van Tuyen, Vo, Franchi, S., Bosacchi, A., Frigeri, P., Gombia, E., Mosca, R., Pal, D., Kalmár, I., Szentpáli, B.

“…The Schottky barrier height in Al/n-In 0.35Ga 0.65As was engineered using thin p-type near-interface In 0.35Ga 0.65As layers grown by molecular beam epitaxy…”
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The effect of InAs quantum layer and quantum dots on the electrical characteristics of GaAs structures by Dózsa, L, Horváth, Zs.J, Van Tuyen, Vo, Pődör, B, Mohácsy, T, Franchi, S, Frigeri, P, Gombia, E, Mosca, R

“…InAs monolayer (QL) and self-aggregated quantum dots (QD) were grown by atomic layer MBE at 460°C on an n-type GaAs-buffer layer and were capped with a 2×10…”
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Electrical characterisation of Al/n–Si/p–Si Schottky junctions prepared by plasma immersion implantation by Horváth, Zs.J., Ádám, M., Dücsö, Cs, Pintér, I., Van Tuyen, Vo, Bársony, I., Gombia, E., Mosca, R., Makaró, Zs

“…Current–voltage and capacitance–voltage measurements on Al/n–Si/p–Si Schottky junctions prepared by plasma immersion implantation of H + and P + ions have been…”
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Electrical characterization of Au/SiO x/ n-GaAs junctions by Ivanèo, J., Horváth, Zs.J., Van Tuyen, Vo, Coluzza, C., Almeida, J., Terrasi, A., Pécz, B., Vincze, Gy, Margaritondo, G.

“…The electrical behavior of Au/SiO x / n-GaAs Schottky structures has been studied using a statistical approach. It has been concluded that the obtained unusual…”
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