Search Results - "Van Nostrand, Joseph E"

Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates by Yang, J. W., Lunev, A., Simin, G., Chitnis, A., Shatalov, M., Khan, M. Asif, Van Nostrand, Joseph E., Gaska, R.

“…We report on fabrication and characterization of blue GaN–InGaN multi-quantum well (MQW) light-emitting diodes (LEDs) over (111) silicon substrates. Device…”
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Surface morphology during multilayer epitaxial growth of Ge(001) by Van Nostrand JE, Chey, SJ, Hasan, M, Cahill, DG, Greene, JE

“…The surface morphology of Ge(001) films grown by molecular beam epitaxy on a Ge(001) substrate is measured using scanning tunneling microscopy. Growth mounds…”
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Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy by Van Nostrand, Joseph E, Chey, S.Jay, Cahill, David G, Botchkarev, A.E, Morkoç, H

“…Scanning tunneling microscopy is used to characterize the surface of homoepitaxial GaAs(001) films deposited on GaAs(001) substrates miscut 0.2° towards [110]…”
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Dynamics of rough Ge(001) surfaces at low temperatures by Chey, SJ, Van Nostrand JE, Cahill, DG

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Surface damage produced by 20 keV Ga bombardment of Ge(001) by Bellon, P., Chey, S.Jay, Van Nostrand, Joseph E., Ghaly, Mai, Cahill, David G., Averback, R.S.

“…Surface damage on Ge(100) due to single 20 keV Ga + ion impacts was investigated by in situ scanning tunneling microscopy (STM). Two types of damage structures…”
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Surface morphology of Ge(001) during etching by low-energy ions by Chey, SJ, Van Nostrand JE, Cahill, DG

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Surface roughness and pattern formation during homoepitaxial growth of Ge(001) at low temperatures by Van Nostrand, Joseph E., Chey, S. Jay, Cahill, David G.

“…The evolution of surface roughness during growth of Ge(001) by molecular beam epitaxy at 155°C is characterized using in situ scanning tunneling microscopy…”
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