Phosphorus doping of boron carbides

Phosphorus doping of boron carbides

Substitution of an electron donor such as phosphorus for a carbon or boron atom in [ital p]-type semiconducting boron carbides is expected to reduce the hole concentration. Phosphorus-doped boron carbide samples have been prepared by hot isostatic pressing with homogeneous dopant levels of up to one...

Full description

Saved in:
Bibliographic Details
Published in:Physical review. B, Condensed matter Vol. 48; no. 16; pp. 11759 - 11766
Main Authors: Aselage, TL, Emin, D, Samara, GA, Tallant, DR, Van Deusen SB, Eatough, MO, Tardy, HL, Venturini, EL, Johnson, SM
Format: Journal Article
Language:English
Published: United States 15-10-1993
Subjects:
360606 - Other Materials- Physical Properties- (1992-)
AC SYSTEMS
ACTIVATION ENERGY
ALLOYS
BORON CARBIDES
BORON COMPOUNDS
CARBIDES
CARBON COMPOUNDS
COHERENT SCATTERING
CRYSTAL DOPING
DC SYSTEMS
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ENERGY
ENERGY SYSTEMS
FABRICATION
HOLES
HOT PRESSING
INHIBITION
MATERIALS
MATERIALS SCIENCE
MATERIALS WORKING
P-TYPE CONDUCTORS
PHOSPHORUS ADDITIONS
PHYSICAL PROPERTIES
POWER SYSTEMS
PRESSING
RAMAN SPECTRA
SCATTERING
SEMICONDUCTOR MATERIALS
SPECTRA
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Substitution of an electron donor such as phosphorus for a carbon or boron atom in [ital p]-type semiconducting boron carbides is expected to reduce the hole concentration. Phosphorus-doped boron carbide samples have been prepared by hot isostatic pressing with homogeneous dopant levels of up to one phosphorus atom per ten unit cells. Raman spectroscopy and x-ray diffraction confirm the presence of phosphorus within two-atom intericosahedral chains. The high-temperature dc conductivities of doped samples were substantially lower than those of undoped boron carbides. This effect was due to a combination of reduced carrier concentrations and increased hopping activation energies. The low-temperature ac conductivity of doped samples is also smaller than that of undoped samples. However, the number of carriers participating in the ac conduction is a very small fraction ([lt]0.1%) of the total carrier density.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
AC04-76DP00789
ISSN:0163-1829
1095-3795
DOI:10.1103/PhysRevB.48.11759