Search Results - "Van Brunt, E."

Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations by Van Brunt, E., Lichtenwalner, D. J., Park, J. H., Ganguly, S., McPherson, J. W.

“…This work explores the lifetime model and failure modes of the 4H-SiC MOS interface in the depletion mode. Unlike accumulation mode TDDB, shorter lifetime and…”
Get full text

Landfill gas collection efficiency: Categorization of data from existing in-situ measurements by Giordano, Charles R, Van Brunt, Michael E, Halevi, Shanee J, Castaldi, Marco J, Orlovits, Zsanett, Illes, Zoltan

“…Landfill methane emissions are commonly estimated using cover-type dependent default collection efficiency values, with a first-order decay model or measured…”
Get full text

Physics of bipolar, unipolar and intermediate conduction modes in Silicon Carbide MOSFET body diodes by Pala, V., Van Brunt, E., Ryu, S. H., Hull, B., Allen, S., Palmour, J., Hefner, A.

“…This paper details the device physics of Silicon Carbide MOSFETs in third quadrant operation. It is observed that the gate bias has a large effect on…”
Get full text

Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs by Hull, B., Allen, S., Zhang, Q., Gajewski, D., Pala, V., Richmond, J., Ryu, S., O'Loughlin, M., Van Brunt, E., Cheng, L., Burk, A., Casady, J., Grider, D., Palmour, J.

“…In this paper, we present reliability and stability data based on a large body of data accumulated from high volume production of SiC power MOSFETs. The SiC…”
Get full text

A New Edge Termination Technique for High-Voltage Devices in 4H-SiC-Multiple-Floating-Zone Junction Termination Extension by Woongje Sung, Van Brunt, E., Baliga, B. J., Huang, A. Q.

“…A new edge termination method, referred to as multiple-floating-zone junction termination extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC…”
Get full text

Solid-state Marx generator with 24 KV 4H-SIC IGBTs by Hinojosa, M., O'Brien, H., Van Brunt, E., Ogunniyi, A., Scozzie, C.

“…This paper presents results on the utilization of newly-developed 24-kV n-channel silicon carbide Insulated-Gate Bipolar Transistors (IGBTs) for Marx generator…”
Get full text

Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices by Xing Huang, Van Brunt, E., Baliga, B. J., Huang, A. Q.

“…Symmetric blocking power semiconductor switches require positive-bevel edge terminations for the reverse blocking p-n junction. This technique has been…”
Get full text

Next generation planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with low specific on-resistance and high switching speed by Zhang, Q. J., Wang, G., Jonas, C., Capell, C., Pickle, S., Butler, P., Lichtenwalner, D., Van Brunt, E., Ryu, S., Richmond, J., Hull, B., Casady, J., Allen, S., Palmour, J.

“…Due to their fast switching speed, knee-free forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to…”
Get full text

Experience in Monitoring Drug Reactions in Outpatients: The Kaiser-Permanente Drug Monitoring System by Friedman, Gary D, Collen, Morris F, Harris, Leon E, Van Brunt, Edmund E, Davis, Lou S

“…The Kaiser-Permanente Drug Reaction Monitoring System is, to our knowledge, the first epidemiologic adverse drug reaction study that has systematically…”
Get full text

Current status of a medical information system by van Brunt, E E, Davis, L S, Terdiman, J F, Singer, S, Besag, E, Collen, M F

“…A pilot medical information system is being implemented and currently is providing services for limited categories of patient data. In one year, physicians'…”
Get more information

Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor by Ryu, S., Lichtenwalner, D., Van Brunt, E., Capell, C., O'Loughlin, M., Jonas, C., Lemma, Y., Zhang, J., Richmond, J., Burk, A., Hull, B., O'Brien, H., Ogunniyi, A., Lelis, A., Casady, J., Grider, D., Allen, S., Palmour, J.

“…The impact of the lifetime enhancement process using high temperature thermal oxidation method on 4H-SiC P-GTOs was investigated. 15 kV 4H-SiC P-GTOs with 140…”
Get full text

The computer medical record in health screening by Collen, M F, Davis, L S, van Brunt, E E

Get more information

Concerned patient by Van Brunt, E

Get full text

A method of measuring the femoral neck in surgical treatment of fractures of the hip by VAN BRUNT, E

Get more information

Assessing quality of care from the medical record by Fessel, W J, Van Brunt, E E

Get more information

Adrenocortical responsiveness to ACTH and angiotensin II in hypophysectomized dogs and dogs treated with large doses of glucocorticoids by Ganong, W F, Pemberton, D L, Van Brunt, E E

Get more information

Penetration of light into the brain of mammals by GANONG, W F, SHEPHERD, M D, WALL, J R, VAN BRUNT, E E, CLEGG, M T

Get more information

Effect of removal of various parts of the brain on ACTH secretion in dogs by WISE, B L, VAN BRUNT, E E, GANONG, W F

Get more information

Ultra high voltage IGBTs in 4H-SiC by Ryu, S., Capell, C., Jonas, C., Lemma, Y., O'Loughlin, M., Clayton, J., Van Brunt, E., Lam, K., Richmond, J., Burk, A., Grider, D., Allen, S., Palmour, J., Agarwal, A., Kadavelugu, A., Bhattacharya, S.

“…A 1 cm × 1 cm 4H-SiC N-IGBT exhibited a blocking voltage of 20.7 kV with a leakage current of 140 μA, which represents the highest blocking voltage reported…”
Get full text

ACTH content of dog kidneys by GOLD, E M, VAN BRUNT, E E, DAILY, A D, BORYCZKA, A T, GANONG, W F

Get more information