Search Results - "Valsaraj, Amithraj"

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation by Rai, Amritesh, Valsaraj, Amithraj, Movva, Hema C.P, Roy, Anupam, Ghosh, Rudresh, Sonde, Sushant, Kang, Sangwoo, Chang, Jiwon, Trivedi, Tanuj, Dey, Rik, Guchhait, Samaresh, Larentis, Stefano, Register, Leonard F, Tutuc, Emanuel, Banerjee, Sanjay K

“…To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D…”
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Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures by Burg, G. William, Prasad, Nitin, Fallahazad, Babak, Valsaraj, Amithraj, Kim, Kyounghwan, Taniguchi, Takashi, Watanabe, Kenji, Wang, Qingxiao, Kim, Moon J, Register, Leonard F, Tutuc, Emanuel

“…We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by…”
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Carrier Trapping by Oxygen Impurities in Molybdenum Diselenide by Chen, Ke, Roy, Anupam, Rai, Amritesh, Valsaraj, Amithraj, Meng, Xianghai, He, Feng, Xu, Xiaochuan, Register, Leonard F, Banerjee, Sanjay, Wang, Yaguo

“…Understanding defect effect on carrier dynamics is essential for both fundamental physics and potential applications of transition metal dichalcogenides…”
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Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe 2 Heterostructures by Burg, G William, Prasad, Nitin, Fallahazad, Babak, Valsaraj, Amithraj, Kim, Kyounghwan, Taniguchi, Takashi, Watanabe, Kenji, Wang, Qingxiao, Kim, Moon J, Register, Leonard F, Tutuc, Emanuel

“…We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by…”
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Effect of rotational misalignment on interlayer coupling in a graphene/hBN/graphene van der Waal's heterostructure by Valsaraj, Amithraj, Register, Leonard F., Banerjee, Sanjay K.

“…We simulate the effects of rotational misalignment of the tunnel barrier layer between aligned channel layers in a monolayer-graphene/hBN/monolayer-graphene…”
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Density-functional-theory-based study of monolayer MoS2 on oxide by Valsaraj, Amithraj, Register, Leonard F., Banerjee, Sanjay K., Jiwon Chang

“…Monolayer transition metal dichalcogenides (TMDs) are novel gapped two-dimensional materials with unique electrical and optical properties. Here, we study the…”
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Semi-classical ensemble Monte Carlo simulator using innovative quantum corrections for nano-scale n-channel FinFETs by Crum, Dax M., Valsaraj, Amithraj, Register, Leonard F., Banerjee, Sanjay K.

“…We present a three-dimensional semi-classical ensemble Monte Carlo device simulator with novel quantum corrections. The simulator includes a beyond-Fermi…”
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Substitutional doping of metal contact for monolayer transition metal dichalcogenides: A density functional theory based study by Valsaraj, Amithraj, Register, Leonard F., Banerjee, Sanjay K., Jiwon Chang

“…Significant roadblocks to the widespread use of monolayer transition metal dichalcogenides for CMOS-logic applications are the large contact resistance and…”
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Effect of HfO2 and Al2O3 on monolayer MoS2 electronic structure by Valsaraj, Amithraj, Jiwon Chang, Register, Leonard F., Banerjee, Sanjay K.

“…Transition metal dichalcogenides (TMDs) are novel, and unlike graphene, gapped 2D materials with unique electrical and optical properties that are being…”
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Impact of gate oxide complex band structure on n-channel III-V FinFETs by Crum, Dax M., Valsaraj, Amithraj, Register, Leonard F., Banerjee, Sanjay K., Sahu, Bhagawan, Krivakopic, Zoran, Banna, Srinivasa, Nayak, Deepak

“…FinFET geometries have been developed for the sub-22 nm regime to extend Si-CMOS scaling via improved electrostatics compared to planar technology. Moreover,…”
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DFT Simulations of Inter-Graphene-Layer Coupling with Rotationally Misaligned hBN Tunnel Barriers in Graphene/hBN/Graphene Tunnel FETs by Valsaraj, Amithraj, Register, Leonard F, Tutuc, Emanuel, Banerjee, Sanjay K

“…Journal of Applied Physics 120, 134310 (2016) Van der Waal's heterostrucutures allow for novel devices such as two-dimensional-to-two-dimensional tunnel…”
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Ensemble Monte Carlo for III-V and Si n-channel FinFETs considering non-equilibrium degenerate statistics and quantum-confined scattering by Crum, Dax M, Valsaraj, Amithraj, David, John K, Register, Leonard F, Banerjee, Sanjay K

“…Particle-based ensemble semi-classical Monte Carlo (MC) methods employ quantum corrections (QCs) to address quantum confinement and degenerate carrier…”
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Carrier Trapping by Oxygen Impurities in Molybdenum Diselenide by Chen, Ke, Roy, Anupam, Rai, Amritesh, Valsaraj, Amithraj, Meng, Xianghai, He, Feng, Xu, Xiaochuan, Register, Leonard F, Banerjee, Sanjay, Wang, Yaguo

“…Understanding defect effect on carrier dynamics is essential for both fundamental physics and potential applications of transition metal dichalcogenides. Here,…”
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Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures by Burg, G. William, Prasad, Nitin, Fallahazad, Babak, Valsaraj, Amithraj, Kim, Kyounghwan, Taniguchi, Takashi, Watanabe, Kenji, Wang, Qingxiao, Kim, Moon J, Register, Leonard F, Tutuc, Emanuel

“…Nano Lett. 17, 3919 (2017) We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer…”
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Theoretical and experimental investigation of vacancy-based doping of monolayer MoS$_2$ on oxide by Valsaraj, Amithraj, Chang, Jiwon, Rai, Amritesh, Register, Leonard F, Banerjee, Sanjay K

“…2D Materials 2, no. 4 (2015): 045009 Monolayer transition metal dichalcogenides are novel, gapped two-dimensional materials. Toward device applications, we…”
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Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer $MoS_{2}$ by Amorphous $TiO_{x}$ Encapsulation by Rai, Amritesh, Valsaraj, Amithraj, Movva, Hema C. P, Roy, Anupam, Ghosh, Rudresh, Sonde, Sushant, Kang, Sangwoo, Chang, Jiwon, Trivedi, Tanuj, Dey, Rik, Guchhait, Samaresh, Larentis, Stefano, Register, Leonard F, Tutuc, Emanuel, Banerjee, Sanjay K

“…Nano Lett., 2015, 15(7), pp 4329-4336 To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon…”
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