Search Results - "Valov, I."

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  1. 1

    Nanobatteries in redox-based resistive switches require extension of memristor theory by Valov, I., Linn, E., Tappertzhofen, S., Schmelzer, S., van den Hurk, J., Lentz, F., Waser, R.

    Published in Nature communications (23-04-2013)
    “…Redox-based nanoionic resistive memory cells are one of the most promising emerging nanodevices for future information technology with applications for memory,…”
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    Journal Article
  2. 2

    Redox processes in silicon dioxide thin films using copper microelectrodes by Tappertzhofen, S., Menzel, S., Valov, I., Waser, R.

    Published in Applied physics letters (14-11-2011)
    “…Although SiO 2 is a typical insulator, we demonstrate an electrochemical characteristic of the Cu/Cu + oxidation at the interface with 30nm thick silicon…”
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    Journal Article
  3. 3

    Degradation Kinetics during Oxygen Electrocatalysis on Perovskite-Based Surfaces in Alkaline Media by Bick, D. S, Krebs, T. B, Kleimaier, D, Zurhelle, A. F, Staikov, G, Waser, R, Valov, I

    Published in Langmuir (30-01-2018)
    “…The oxygen evolution reaction (OER) during alkaline water electrolysis is the bottleneck of water splitting. Perovskite materials have been particularly…”
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    Journal Article
  4. 4

    Design of defect-chemical properties and device performance in memristive systems by Lübben, M., Cüppers, F., Mohr, J., von Witzleben, M., Breuer, U., Waser, R., Neumann, C., Valov, I.

    Published in Science advances (01-05-2020)
    “…Impurities and dopants in memristive devices determine their switching kinetics, performance, and neuromorphic functionalities. Future development of the…”
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    Journal Article
  5. 5

    Stability and Degradation of Perovskite Electrocatalysts for Oxygen Evolution Reaction by Bick, D.S., Kindsmüller, A., Staikov, G., Gunkel, F., Müller, D., Schneller, T., Waser, R., Valov, I.

    Published in Electrochimica acta (10-11-2016)
    “…Pr0.2Ba0.8CoO3-δ (PBCO) and Ba0.5Sr0.5Co0.5Fe0.5O3-δ (BSCF) perovskite thin film electrodes were used as model systems for testing degradation and stability…”
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    Journal Article
  6. 6

    Electrocatalysts for bifunctional oxygen/air electrodes by Nikolova, V., Iliev, P., Petrov, K., Vitanov, T., Zhecheva, E., Stoyanova, R., Valov, I., Stoychev, D.

    Published in Journal of power sources (01-12-2008)
    “…Oxygen reduction and evolution have been studied with respect to the development of bifunctional air/oxygen electrode (BFE). Three groups of catalysts have…”
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    Journal Article
  7. 7

    Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems by Frahm, T., Buttberg, M., Gvozdev, G., Muller, R. A., Chen, S., Sun, B., Raffauf, L., Menzel, S., Valov, I., Wouters, D., Waser, R., Knoch, J.

    “…Lateral electrochemical metallization (ECM) cells are fabricated with a combined spacer/damascene process. The process allows the realization of nanoscale…”
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    Journal Article
  8. 8

    Ionic conductivity of low yttria-doped cubic zirconium oxide nitride single crystals by Berendts, S., Eufinger, J.-P., Valov, I., Janek, J., Lerch, M.

    Published in Solid state ionics (15-11-2016)
    “…Low yttria-doped cubic zirconium oxide nitride single crystals with high nitrogen contents show unexpected high oxygen ion conductivity in a temperature range…”
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    Journal Article
  9. 9

    Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta2O5 atomic switch by Tsuruoka, T., Hasegawa, T., Valov, I., Waser, R., Aono, M.

    Published in AIP advances (01-03-2013)
    “…The speed of the SET operation of a Cu/Ta2O5/Pt atomic switch from a high-resistance state to a low-resistance state was measured by transient current…”
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    Journal Article
  10. 10

    Ionic and electronic conductivity of nitrogen-doped YSZ single crystals by Valov, I., Rührup, V., Klein, R., Rödel, T.-C., Stork, A., Berendts, S., Dogan, M., Wiemhöfer, H.-D., Lerch, M., Janek, J.

    Published in Solid state ionics (12-11-2009)
    “…The ionic and electronic charge transport was studied for single crystals of 9.5 mol% yttria-stabilized zirconia with additional nitrogen doping (YSZ:N) of up…”
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    Journal Article
  11. 11

    Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories by Valov, I., Staikov, G.

    Published in Journal of solid state electrochemistry (01-02-2013)
    “…The impact of the electrochemical nucleation on the switching kinetics in many nanoscaled redox-based resistive switching memories is critically discussed. In…”
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    Journal Article
  12. 12

    Preparation of nitrogen-doped YSZ thin films by pulsed laser deposition and their characterization by VALOV, I, DE SOUZA, R. A, WANG, C. Z, BÖRGER, A, KORTE, C, MARTIN, M, BECKER, K.-D, JANEK, J

    Published in Journal of materials science (01-03-2007)
    “…The pulsed laser deposition technique was applied to deposit nitrogen-doped yttria stabilized zirconia (YSZ) thin films. The working parameters were varied in…”
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    Conference Proceeding Journal Article
  13. 13

    Electrochemical deposition of thin zirconia films on stainless steel 316 L by Stefanov, P, Stoychev, D, Valov, I, Kakanakova-Georgieva, A, Marinova, Ts

    Published in Materials chemistry and physics (14-07-2000)
    “…Zirconia films (ZrO 2) have been deposited electrochemically on stainless steel SS 316 L in a non-aqueous electrolyte based on absolute ethyl alcohol and ZrCl…”
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    Journal Article
  14. 14

    Chemical composition and corrosion resistance of passive chromate films formed on stainless steels 316 L and 1.4301 by Stoychev, D, Stefanov, P, Nicolova, D, Valov, I, Marinova, Ts

    Published in Materials chemistry and physics (15-01-2002)
    “…The chemical composition and corrosion behavior of the natural and formed by chemical treatment in chromium-containing solution passive films on 316 L and…”
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    Journal Article
  15. 15

    Copper facilitated nickel oxy-hydroxide films as efficient synergistic oxygen evolution electrocatalyst by Singh, A., Schneller, T., Valov, I., Singh, I.B., Srivastava, A.K., Waser, R.

    Published in Journal of catalysis (01-04-2020)
    “…[Display omitted] •Mixed copper-nickel mixed oxides film deposited using cost effective method chemical solution deposition method.•Present in 1:1 ratio gives…”
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    Journal Article
  16. 16

    Quantum size effects and non-equilibrium states in nanoscale silicon dioxide based resistive switches by Tappertzhofen, S., Linn, E., Menzel, S., Waser, R., Valov, I.

    “…The integration of microelectronics goes progressively on, and memory devices are now based on processes on the atomic scale. Thus, quantum size effects become…”
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    Conference Proceeding
  17. 17

    Electrochemical growth of thin La2O3 films on oxide and metal surfaces by Stoychev, D., Valov, I., Stefanov, P., Atanasova, G., Stoycheva, M., Marinova, Ts

    Published in Materials Science & Engineering C (15-01-2003)
    “…This work presents a new electrochemical method (i.e. new electrolyte composition and electrolysis regime) for direct formation of La2O3 on ZrO2 and other…”
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    Journal Article
  18. 18

    Electrode activation and degradation: Morphology changes of platinum electrodes on YSZ during electrochemical polarisation by Mutoro, Eva, Günther, Sebastian, Luerßen, Bjoern, Valov, Ilia, Janek, Jürgen

    Published in Solid state ionics (15-10-2008)
    “…During polarisation of dense PLD Pt film electrodes on YSZ changes in the morphology of the anode appeared involving a pronounced electrode activation. These…”
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    Journal Article
  19. 19

    Kinetic studies of the electrochemical nitrogen reduction and incorporation into yttria stabilized zirconia by Valov, Ilia, Janek, Jürgen

    Published in Solid state ionics (15-10-2006)
    “…The kinetics of the electrochemical reduction of molecular nitrogen at gold micro electrodes on yttria stabilized zirconia (YSZ) solid oxide electrolyte is…”
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    Journal Article
  20. 20

    Live demonstration: An associative capacitive network based on nanoscale complementary resistive switches by Nielen, L., Tappertzhofen, S., Linn, E., Kavehei, O., Skafidas, S., Valov, I., Waser, R.

    “…Integration density is a major drawback of today's associative memories required for intelligent data processing for such as pattern recognition or…”
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    Conference Proceeding