Search Results - "Valeyev, V G"

k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures by Lev, L. L., Maiboroda, I. O., Husanu, M.-A., Grichuk, E. S., Chumakov, N. K., Ezubchenko, I. S., Chernykh, I. A., Wang, X., Tobler, B., Schmitt, T., Zanaveskin, M. L., Valeyev, V. G., Strocov, V. N.

“…Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing…”
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Magnetoresistance and Symmetry of a Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterostructures by Chumakov, N. K., Andreev, A. A., Belov, I. V., Davydov, A. B., Ezubchenko, I. S., Lev, L. L., Morgun, L. A., Nikolaev, S. N., Chernykh, I. A., Shabanov, S. Yu, Strocov, V. N., Valeyev, V. G.

“…The physical characteristics of a two-dimensional electron gas located in the GaN layer near the AlN/GaN interface of AlGaN/AlN/GaN heterostructures have been…”
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Resistive Switching in Nitride Memristors: Experiment by Ezubchenko, I S, Chernykh, I A, Andreev, A A, Kondratev, O A, Chumakov, N K, Valeyev, V G

“…The features of resistive switching in memristors based on crystalline aluminum nitride with a wurtzite structure, grown under technology developed at the…”
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Impact of band-bending on the k-resolved electronic structure of Si-doped GaN by Lev, L. L., Maiboroda, I. O., Grichuk, E. S., Chumakov, N. K., Schröter, N. B. M., Husanu, M.-A., Schmitt, T., Aeppli, G., Zanaveskin, M. L., Valeyev, V. G., Strocov, V. N.

“…Band bending at semiconductor surfaces and interfaces is the key to applications ranging from classical transistors to topological quantum computing. A…”
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Quantum Coherence and the Kondo Effect in the 2D Electron Gas of Magnetically Undoped AlGaN/GaN High-Electron-Mobility Transistor Heterostructures by Chumakov, N. K., Chernykh, I. A., Davydov, A. B., Ezubchenko, I. S., Grishchenko, Yu. V., Lev, L. L., Maiboroda, I. O., Morgun, L. A., Strocov, V. N., Valeyev, V. G., Zanaveskin, M. L.

“…The unusual observation of the Kondo effect in the two-dimensional electron gas (2DEG) of magnetically undoped AlGaN/GaN heterostructures is reported. The…”
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k-Space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures by Lev, L. L, Maiboroda, I. O, Husanu, M. -A, Grichuk, E. S, Chumakov, N. K, Ezubchenko, I. S, Chernykh, I. A, Wang, X, Tobler, B, Schmitt, T, Zanaveskin, M. L, Valeyev, V. G, Strocov, V. N

“…Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing…”
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Is the tunneling electron really affected by electrostatic image forces? by Valeyev, V. G., Hagmann, M. J.

“…The Keldysh–Green function technique in the representation of scattering states is used to study the dynamic conductance and the stationary current noise of a…”
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AC linear response of a resonant tunneling system by Valeyev, V. G., Hagmann, M. J.

“…The Keldysh–Green function technique in the representation of scattering states is applied to study the alternating current (AC) linear current response of a…”
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