Search Results - "VRIEZEMA, C. J"

Experiments on atomic-scale mechanisms of diffusion by COWERN, N. E. B, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, VRIEZEMA, C. J

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Sharp boron spikes in silicon grown by fast gas switching chemical vapor deposition by ROKSNOER, P. J, MAES, J. W. F. M, VINK, A. T, VRIEZEMA, C. J, ZALM, P. C

“…Boron-doping spikes in Si have been grown by fast gas switching chemical vapor deposition at 800 or 850 °C using Si2H6 in 0.03 or 0.1 atm H2, respectively. The…”
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Sharp phosphorus spikes in silicon grown by fast gas-switching chemical vapor deposition at reduced and atmospheric pressure by ROKSNOER, P. J, MAES, J. W. F. M, WINK, A. T, VRIEZEMA, C. J, ZALM, P. C

“…Sharp phosphorus doping spikes in silicon were grown by fast-gas-switching chemical vapor deposition at temperatures between 800 and 850 °C using disilane and…”
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Influence of surface topography on depth profiles obtained with secondary-ion mass spectrometry by WALKER, A. J, BORCHERT, M. T, VRIEZEMA, C. J, ZALM, P. C

“…Lithographically generated well-defined surface topography of submicron dimensions has been etched into silicon (100) previously implanted with 25 keV 11B to a…”
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Characterization of sharp phosphorus dopant features in silicon by secondary ion mass spectrometry by Vriezema, C. J., Zalm, P. C., Maes, J. W. F. M., Roksnoer, P. J.

“…The in‐depth distribution of a sharp P dopant feature in Si grown by vapor phase epitaxy has been determined by secondary ion mass spectrometry under various…”
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Sharp boron spikes in silicon grown at reduced and atmospheric pressure by fast-gas-switching CVD by VINK, A. T, ROKSNOER, P. J, MAES, J. W. F. M, VRIEZEMA, C. J, VAN IJZENDOORN, L. J, ZALM, P. C

“…Boron doping spikes in Si were grown by fast-gas-switching CVD at 800 and 850°C using Si 2 H 6 and B 2 H 6 in 0.03, 0.1 and 1 atm H 2 as the carrier gas. The B…”
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Field-induced segregation effects during secondary-ion mass spectrometry depth profiling of Cu and Na implanted in silicon by VRIEZEMA, C. J, JANSSEN, K. T. F, BOUDEWIJN, P. R

“…Segregation effects during secondary-ion mass spectrometry (SIMS) depth profiling of Cu and Na implanted in n- and p-type Si are investigated under different…”
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Heterojunction bipolar transistors with Si1-x Gex base by Pruijmboom, A., Timmering, C.E., van Rooij-Mulder, J.M.L., Gravesteijn, D.J., de Boer, W.B., Kersten, W.J., Slotboom, J.W., Vriezema, C.J., de Kruif, R.

“…Mesa-isolated bipolar transistors with strained Si 1-x Ge z -base layers, grown by molecular beam epitaxy end atmospheric pressure chemical vapour deposition,…”
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